Abstract: A method of fabrication of a multi-gate semiconductor device that includes providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers. The plurality of the second type of epitaxial layers is oxidized in the source/drain region. A first portion of a first layer of the second type of epitaxial layers is removed in a channel region of the fin to form an opening between a first layer of the first type of epitaxial layer and a second layer of the first type of epitaxial layer. A portion of a gate structure is then formed in the opening.

Abstract: A remote controlled aircraft may include a deployable main parachute, deployable paratroopers stored in the coils of helical spring actuator and moved into deployment position by rotation of the actuator. The actuator may be operated within a storage compartment configured to fit the actuator and to maintain alignment of the paratroopers before deployment. The remote control may include individual engine boost buttons and selectable, preprogrammed engine speeds. A secondary remote controlled aircraft may also be mounted for deployment on the main aircraft. Various configurations and combinations of elements and features are disclosed and may be claimed.