Abstract: A pressure sensitive adhesive composition and a protective film employing the same are provided. The pressure sensitive adhesive composition includes 30-45 parts by weight of a tackifier and 55-70 parts by weight of a polymer. The polymer includes at least one block copolymer. The block copolymer includes a vinyl aromatic block polymerized by a vinyl aromatic monomer and a conjugated diene block polymerized by a conjugated diene monomer. The block copolymer meets one of the following conditions: (1) the content of the vinyl aromatic monomer is from 15 wt % to 25 wt % and the content of the vinyl group of the conjugated diene block is less than or equal to 45 wt % or, (2) the content of the vinyl aromatic monomer is from 10 wt % to 15 wt % and the content of the vinyl group of the conjugated diene block is less than or equal to 45 wt %, or greater than or equal to 60 wt %.

Abstract: A manufacturing method for a memory structure including the following steps is provided. A bit line structure is formed on the substrate. A contact structure is formed on the substrate on one side of the bit line structure. A capacitor structure is formed on the contact structure. The capacitor structure includes a first electrode, a second electrode and an insulating layer. The first electrode is disposed on the contact structure in a misaligned manner. The first electrode includes a first bottom surface and a second bottom surface. The first bottom surface is lower than the second bottom surface. The first bottom surface is disposed on the contact structure. The second electrode is located on the first electrode. The insulating layer is disposed between the first electrode and the second electrode.

Abstract: Provided is a memory device including a substrate, a plurality of landing pads, a protective layer, a filling layer, a plurality of cup-shaped lower electrodes, a capacitor dielectric layer, and an upper electrode. The landing pads are disposed on the substrate. The protective layer conformally covers sidewalls of the landing pads. The filling layer is laterally disposed between the landing pads, wherein the filling layer has a top surface higher than a top surface of the landing pads. The cup-shaped lower electrodes are respectively disposed on the landing pads. The capacitor dielectric layer covers a surface of the cup-shaped lower electrodes. The upper electrode covers a surface of the capacitor dielectric layer. A method of forming a memory device is also provided.

Abstract: Provided is a memory device including a substrate, a plurality of landing pads, a protective layer, a filling layer, a plurality of cup-shaped lower electrodes, a capacitor dielectric layer, and an upper electrode. The landing pads are disposed on the substrate. The protective layer conformally covers sidewalls of the landing pads. The filling layer is laterally disposed between the landing pads, wherein the filling layer has a top surface higher than a top surface of the landing pads. The cup-shaped lower electrodes are respectively disposed on the landing pads. The capacitor dielectric layer covers a surface of the cup-shaped lower electrodes. The upper electrode covers a surface of the capacitor dielectric layer. A method of forming a memory device is also provided.

Abstract: A manufacturing method for a memory structure including the following steps is provided. A bit line structure is formed on the substrate. A contact structure is formed on the substrate on one side of the bit line structure. A capacitor structure is formed on the contact structure. The capacitor structure includes a first electrode, a second electrode and an insulating layer. The first electrode is disposed on the contact structure in a misaligned manner. The first electrode includes a first bottom surface and a second bottom surface. The first bottom surface is lower than the second bottom surface. The first bottom surface is disposed on the contact structure. The second electrode is located on the first electrode. The insulating layer is disposed between the first electrode and the second electrode.

Abstract: A memory structure including a substrate, a bit line structure, a contact structure, and a capacitor structure is provided. The bit line structure is located on the substrate. The contact structure is located on the substrate on one side of the bit line structure. The capacitor structure is located on the contact structure. The capacitor structure includes a first electrode, a second electrode, and an insulating layer. The first electrode includes a first bottom surface and a second bottom surface. The first bottom surface is lower than the second bottom surface. The first bottom surface is only located on a part of the contact structure. The second electrode is located on the first electrode. The insulating layer is located between the first electrode and the second electrode.

Abstract: A memory structure including a substrate, a bit line structure, a contact structure, and a capacitor structure is provided. The bit line structure is located on the substrate. The contact structure is located on the substrate on one side of the bit line structure. The capacitor structure is located on the contact structure. The capacitor structure includes a first electrode, a second electrode, and an insulating layer. The first electrode includes a first bottom surface and a second bottom surface. The first bottom surface is lower than the second bottom surface. The first bottom surface is only located on a part of the contact structure. The second electrode is located on the first electrode. The insulating layer is located between the first electrode and the second electrode.

Abstract: An analog to digital converter includes a coarse ADC circuit composed of L offset-adjustable comparators and a fine ADC circuit composed of M offset-adjustable comparators. Each offset-adjustable comparator in the coarse ADC circuit has a constant embedded offset. Each offset-adjustable comparator in the fine ADC circuit has an adaptive embedded offset digitally determined by outputs of the coarse ADC circuit. With the constant and adaptive embedded offsets, the analog to digital converter requires no resistor ladder. Therefore, power consumption and area of the analog to digital converter is reduced, and faster conversion speed is achieved.

Abstract: A pressure sensitive adhesive composition and a protective film employing the same are provided. The pressure sensitive adhesive composition includes 30-45 parts by weight of a tackifier and 55-70 parts by weight of a polymer. The polymer includes at least one block copolymer. The block copolymer includes a vinyl aromatic block polymerized by a vinyl aromatic monomer and a conjugated diene block polymerized by a conjugated diene monomer. The block copolymer meets one of the following conditions: (1) the content of the vinyl aromatic monomer is from 15 wt % to 25 wt % and the content of the vinyl group of the conjugated diene block is less than or equal to 45 wt % or, (2) the content of the vinyl aromatic monomer is from 10 wt % to 15 wt % and the content of the vinyl group of the conjugated diene block is less than or equal to 45 wt %, or greater than or equal to 60 wt %.

Abstract: The present invention relates to a non-contact continuous type sensing device for a flowmeter and a sensing method thereof. The flowmeter includes a movable member that is connected to an operating member and that is driven by a fluid to move, thereby moving the operating member. A projector is mounted above the operating member and projects signals onto the operating member. At least two regions are defined in a side of the operating member facing the projector. At least one of the at least two regions includes metal material to reflect the signals projected thereon. A signal density in a space between the projector and the operating member is changed when the operating member is passing through the space, such that the projection power of the projector is affected to thereby sense a movement condition of the operating member and to thereby continuously know a flowing condition of the fluid.

Abstract: The present invention relates to a non-contact continuous type sensing device for a flowmeter and a sensing method thereof. The flowmeter includes a movable member that is connected to an operating member and that is driven by a fluid to move, thereby moving the operating member. A projector is mounted above the operating member and projects signals onto the operating member. At least two regions are defined in a side of the operating member facing the projector. At least one of the at least two regions includes metal material to reflect the signals projected thereon. A signal density in a space between the projector and the operating member is changed when the operating member is passing through the space, such that the projection power of the projector is affected to thereby sense a movement condition of the operating member and to thereby continuously know a flowing condition of the fluid.