Abstract: Disclosed herein is generally directed to antibodies against the Siglec-3, and pharmaceutical compositions that comprise the antibodies. According to some embodiments of the present disclosure, the present anti-Siglec-3 antibodies may suppress the over activation of Siglec-3, thereby reversing the immunosuppression effects resulted therefrom. As such, the present antibodies may treat diseases associated with the over activation of Siglec-3, such as hepatitis B virus (HBV) infection, neurodegenerative diseases, autoimmune diseases, or cancers. Accordingly, the present disclosure also includes methods for the treatment and/or prophylaxis of the above diseases.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted into the etch stop layer. A capping layer and a device layer are formed on the etch stop layer. A handle substrate is bonded to the device layer. The sacrificial substrate, the epitaxial layer, and the etch stop layer having the carbon atoms are removed from the handle substrate.

Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.

Abstract: Various embodiments of the present application are directed towards an integrated chip structure. The integrated chip structure includes a bottom electrode over a substrate, a top electrode over the bottom electrode, and a capacitor insulator structure between the bottom electrode and the top electrode. The capacitor insulator structure includes a first dielectric layer, a second dielectric layer over the first dielectric layer, and a third dielectric layer over the second dielectric layer. The first dielectric layer includes a first dielectric material. The second dielectric layer includes a second dielectric material that is different than the first dielectric material. The second dielectric material is an amorphous solid. The third dielectric layer includes the first dielectric material.

Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Abstract: A semiconductor package includes a redistribution structure, a supporting layer, a semiconductor device, and a transition waveguide structure. The redistribution structure includes a plurality of connectors. The supporting layer is formed over the redistribution structure and disposed beside and between the plurality of connectors. The semiconductor device is disposed on the supporting layer and bonded to the plurality of connectors, wherein the semiconductor device includes a device waveguide. The transition waveguide structure is disposed on the supporting layer adjacent to the semiconductor device, wherein the transition waveguide structure is optically coupled to the device waveguide.

Abstract: A nasal dilator for treating breathing problem is provided, which includes a hollow nasal dilator body and a one-way flow resistance unit. The hollow nasal dilator body has a first end opening and a second end opening opposing the first end opening. The hollow nasal dilator body longitudinally extends from the first end opening to the second end opening and being adapted for insertion into a user's nostril with the second end opening placed within the user's nasal passage so that the hollow nasal dilator body supports and dilates the nasal passage. The one-way flow resistance unit is assembled to the hollow nasal dilator body and in proximity to the first end opening and away from the second end opening. The one-way flow resistance unit creates an exhalation flow resistance higher than an inhalation flow resistance such that an expiratory positive airway pressure is generated within the nasal passage.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: A package includes an electronic die, a photonic die underlying and electronically communicating with the electronic die, a lens disposed on the electronic die, and a prism structure disposed on the lens and optically coupled to the photonic die. The prism structure includes first and second polymer layers, the first polymer layer includes a first curved surface concaving toward the photonic die, the second polymer layer embedded in the first polymer layer includes a second curved surface substantially conforming to the first curved surface, and an outer sidewall of the second polymer layer substantially aligned with an outer sidewall of the first polymer layer.

Abstract: An integrated circuit package and a method of forming the same are provided. The integrated circuit package includes a photonic integrated circuit die. The photonic integrated circuit die includes an optical coupler. The integrated circuit package further includes an encapsulant encapsulating the photonic integrated circuit die, a first redistribution structure over the photonic integrated circuit die and the encapsulant, and an opening extending through the first redistribution structure and exposing the optical coupler.

Abstract: A semiconductor package includes a first die stack structure and a second die stack structure, an insulating encapsulation, a redistribution structure, at least one prism structure and at least one reflector. The first die stack structure and the second die stack structure are laterally spaced apart from each other along a first direction, and each of the first die stack structure and the second die stack structure comprises an electronic die; and a photonic die electronically communicating with the electronic die. The insulating encapsulation laterally encapsulates the first die stack structure and the second die stack structure. The redistribution structure is disposed on the first die stack structure, the second die stack structure and the insulating encapsulation, and electrically connected to the first die stack structure and the second die stack structure. The at least one prism structure is disposed within the redistribution structure and optically coupled to the photonic die.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: Provided herein is a method for treating neurodegenerative diseases, such as Alzheimer's disease (AD), by use of monoclonal antibody, which exhibits a binding affinity to Siglec-3 receptor. According to some embodiments of the present disclosure, the monoclonal antibody is capable of enhancing phagocytosis of neurotoxic peptides by immune cells thereby providing a neuroprotective effect to a subject in need thereof.

Abstract: Disclosed herein is a novel monoclonal antibody exhibiting binding affinity to Siglec-3 receptor. According to the embodiment, the monoclonal antibody is capable of reversing HBV-induced immunosuppression. Accordingly, also disclosed herein are the uses thereof in the treatment and/or prophylaxis of hepatitis B virus (HBV) infection.

Abstract: Disclosed herein is a phage-displayed single-chain variable fragment (scFv) library, which comprises a plurality of phage-displayed scFvs characterized with a specific sequence in each CDR. The present phage-displayed scFv library is useful in selecting an antibody fragment exhibiting a binding affinity and specificity to mesothelin (MSLN). Also disclosed herein are a recombinant antibody specific to MSLN, an immunoconjugate comprising the recombinant antibody, and uses thereof in treating cancers.

Abstract: Disclosed herein are methods for selecting an antibody fragment specific to an influenza virus. According to certain embodiments of the present disclosure, the influenza virus may be influenza virus type A (IAV) or influenza virus type B (IBV). Also disclosed herein are the selected antibodies, recombinant antibody produced from the selected antibodies, and the uses thereof in the diagnosis of influenza virus infection.

Abstract: Disclosed herein are recombinant antibodies or the fragment thereof for detecting severe acute respiratory syndrome coronavirus (SARS-CoV). According to some embodiments, the SARS-CoV is SARS-CoV-1. According to some alternative embodiments, the SARS-CoV is SARS-CoV-2. Also disclosed herein are a kit comprising the recombinant antibodies, and a method for diagnosing the infection of SARS-CoV by using the recombinant antibody or the kit.

Abstract: Disclosed herein are methods for high-throughput screening of a virus-specific neutralizing antibody. According to certain embodiments of the present disclosure, the virus is an influenza virus. Also disclosed herein are the antibodies selected by the high-throughput screening method, and the uses thereof in the prophylaxis and/or treatment of viral infection.

Abstract: Provided herein is a method for treating neurodegenerative diseases, such as Alzheimer's disease (AD), by use of monoclonal antibody, which exhibits a binding affinity to Siglec-3 receptor. According to some embodiments of the present disclosure, the monoclonal antibody is capable of enhancing phagocytosis of neurotoxic peptides by immune cells thereby providing a neuroprotective effect to a subject in need thereof.