Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a first bit-line extending in a first direction and a first word-line extending in a second direction substantially perpendicular to the first direction. The semiconductor device also includes a first channel. The first bit-line and the first word-line are electrically coupled to the first channel. The semiconductor device also includes a first gate line disposed between the first bit-line and the first word-line. The first gate line is electrically coupled to the first channel and configured to close the first channel once the first bit-line and the first word-line are shorted together through the first channel.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a first bit-line extending in a first direction and a first word-line extending in a second direction substantially perpendicular to the first direction. The semiconductor device also includes a first channel. The first bit-line and the first word-line are electrically coupled to the first channel. The semiconductor device also includes a first gate line disposed between the first bit-line and the first word-line. The first gate line is electrically coupled to the first channel and configured to close the first channel once the first bit-line and the first word-line are shorted together through the first channel.

Abstract: An antifuse element includes a conductive region formed in a semiconductor substrate extending in a first direction, a dielectric layer formed on a portion of the conductive region, a first conductive plug formed on the dielectric layer, a second conductive plug formed on another portion of the conductive region, a first conductive member formed over the first conductive plug, and a second conductive member formed over the second conductive plug. The dielectric layer has a first dielectric portion extending in a second direction, and a second dielectric portion extending in the first direction, in which the dielectric layer implements an electrical isolation between the conductive region and the first conductive plug. The first conductive plug has a first region of a first width and a second region of a second width, and the first width is greater than the second width.

Abstract: An antifuse element includes a conductive region formed in a semiconductor substrate extending in a first direction, a dielectric layer formed on a portion of the conductive region, a first conductive plug formed on the dielectric layer, a second conductive plug formed on another portion of the conductive region, a first conductive member formed over the first conductive plug, and a second conductive member formed over the second conductive plug. The dielectric layer has a first dielectric portion extending in a second direction, and a second dielectric portion extending in the first direction, in which the dielectric layer implements an electrical isolation between the conductive region and the first conductive plug. The first conductive plug has a first region of a first width and a second region of a second width, and the first width is greater than the second width.

Abstract: The present disclosure provides a circuit. The circuit includes a detection circuit, a correction circuit and an adjustment circuit. The detection circuit is configured to detect an initial logic state of an input signal, and to generate, in response to the initial logic state, a first signal with a first logic state. The correction circuit is configured to compare the first signal having the first logic state with a second signal having a second logic state, and to generate an enable signal according to the comparison. The adjustment circuit is configured to be enabled by the enable signal when the first logic state of the first signal is different from the second logic state of the second signal, to generate an adjustment signal to the detection circuit, in which the detection circuit is further configured to be adjusted according to the adjustment signal, to generate an adjusted first signal.

Abstract: The present disclosure provides a circuit. The circuit includes a detection circuit, a correction circuit and an adjustment circuit. The detection circuit is configured to detect an initial logic state of an input signal, and to generate, in response to the initial logic state, a first signal with a first logic state. The correction circuit is configured to compare the first signal having the first logic state with a second signal having a second logic state, and to generate an enable signal according to the comparison. The adjustment circuit is configured to be enabled by the enable signal when the first logic state of the first signal is different from the second logic state of the second signal, to generate an adjustment signal to the detection circuit, in which the detection circuit is further configured to be adjusted according to the adjustment signal, to generate an adjusted first signal.

Abstract: A drive level auto-tuning system includes a driver circuit, a resonant circuit, a driver controller and an automatic tuner. The resonant circuit is electrically connected to the driver circuit. The driver controller is electrically connected to the driver circuit. The automatic tuner is electrically connected to the driver controller, and the automatic tuner is configured to acquire a root-mean-square (RMS) current measured from the resonant circuit, so as to command the driver controller to automatically adjust a gain of driver circuit.

Abstract: The present disclosure provides an integrated circuit (IC) device and a circuitry. The IC includes a measurement circuit and a classifier circuit. The measurement circuit is configured to acquire a practical voltage. The classifier circuit is configured to: generate an information on an immature classification by comparing a default voltage and the practical voltage; receive an information on a reference classification, wherein the reference classification is acquired by manually comparing the default voltage and the practical voltage; update the default voltage to a learned voltage based on the immature classification and the reference classification; and generate a prediction, based on the learned voltage, for adjusting a slew rate.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a pair of walls and a conductive layer. The pair of walls, disposed on the substrate, are configured to define a recess therebetween to receive a liquid. The conductive layer is disposed above the substrate, and has a resistance, wherein the resistance is correlated with a surface tension of the liquid in the recess.

Abstract: The present disclosure provides an integrated circuit (IC) device and a circuitry. The IC includes a measurement circuit and a classifier circuit. The measurement circuit is configured to acquire a practical voltage. The classifier circuit is configured to: generate an information on an immature classification by comparing a default voltage and the practical voltage; receive an information on a reference classification, wherein the reference classification is acquired by manually comparing the default voltage and the practical voltage; update the default voltage to a learned voltage based on the immature classification and the reference classification; and generate a prediction, based on the learned voltage, for adjusting a slew rate.

Abstract: A drive level auto-tuning system includes a driver circuit, a resonant circuit, a driver controller and an automatic tuner. The resonant circuit is electrically connected to the driver circuit. The driver controller is electrically connected to the driver circuit. The automatic tuner is electrically connected to the driver controller, and the automatic tuner is configured to acquire a root-mean-square (RMS) current measured from the resonant circuit, so as to command the driver controller to automatically adjust a gain of driver circuit.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a pair of walls and a conductive layer. The pair of walls, disposed on the substrate, are configured to define a recess therebetween to receive a liquid. The conductive layer is disposed above the substrate, and has a resistance, wherein the resistance is correlated with a surface tension of the liquid in the recess.

Abstract: A method of forming a gate structure. First, a substrate is provided, and a gate oxide layer, a polysilicon layer, a silicide layer, and a cap layer are consecutively formed onto the substrate. Then, an etching process is performed to etch a portion of the cap layer, the silicide layer, and the polysilicon layer and stop on the polysilicon layer for forming a stacked gate. Thereafter, a portion of the silicide layer exposed on sidewalls of the stacked gate is removed to form a recess. A passivation layer is deposited to fill the recess. The remaining polysilicon layer and the gate oxide layer outside the sidewalls of the stacked gate structure are removed.

Abstract: Disclosed is a shallow trench isolation (STI) forming method for improving STI step uniformity. The method deposits an oxidation layer to a semiconductor structure formed with STIs. After a planarization material layer is formed on the oxidation, then CMP process is performed. By using the method of the present invention, the STI step uniformity can be raised.

Abstract: The invention provides a damascene gate process. A semiconductor substrate having a pad layer and an etch stop layer formed thereon is provided, and an insulating layer is formed to cover the etch stop layer, followed by forming an opening by partially removing the insulating layer, the etch stop layer, and the pad layer. A protective spacer is formed on the sidewall of the opening, wherein the top of the protective spacer is lower than the insulating layer. A gate conducting layer is then formed in the opening. The protective spacer and the insulating layer are removed to expose a portion of the semiconductor substrate and the etch stop layer. Implantation is then performed to form lightly doped drains. A gate spacer is then formed to cover the gate conducting layer. The etch stop layer and the pad layer are removed, and implantation is then performed to a form source/drain.

Abstract: A manufacturing method for a MOSFET gate structure. The method comprises providing a substrate, sequentially depositing a pad layer and a dielectric layer thereon, defining a gate trench passing through the dielectric layer and the pad layer to expose a predetermined gate area of the substrate, sequentially forming a gate dielectric layer, a first conductive layer, a second conductive layer, and a cap layer on the exposed substrate in the gate trench to form a damascene gate structure, and removing the dielectric layer.

Abstract: A double corner rounding process for a partial vertical cell. A first corner rounding process is performed after etching the substrate to form a shallow trench for device isolation. A second corner rounding process is performed after forming shallow trench isolations (STIs) and exposing the corner of the substrate at the active areas in the memory cell array region.

Abstract: Disclosed is a shallow trench isolation (STI) forming method for improving STI step uniformity. The method deposits an oxidation layer to a semiconductor structure formed with STIs. After a planarization material layer is formed on the oxidation, then CMP process is performed. By using the method of the present invention, the STI step uniformity can be raised.

Abstract: A method of forming shallow trench isolation with chamfered corners. First, a pad insulating layer, a first mask layer, and a second mask layer are sequentially formed on a substrate. The second mask layer, the first mask layer, and the pad insulating layer are patterned to form an opening exposing a portion of the substrate. Next, the substrate is etched using the patterned second mask layer as a mask to form a trench therein. Next, part of the second mask layer is removed to expose the first mask layer adjacent to the trench and result in the second mask layer having a tapered profile. Finally, the second mask layer, the first mask layer, the pad insulating layer, and the substrate are etched along the tapered profile of the second mask layer to chamfer corners of the trench.

Abstract: A method of forming a gate structure. First, a substrate is provided, and a gate oxide layer, a polysilicon layer, a suicide layer, and a cap layer are consecutively formed onto the substrate. Then, an etching process is performed to etch a portion of the cap layer, the silicide layer, and the polysilicon layer and stop on the polysilicon layer for forming a stacked gate. Thereafter, a portion of the silicide layer exposed on sidewalls of the stacked gate is removed to form a recess. A passivation layer is deposited to fill the recess. The remaining polysilicon layer and the gate oxide layer outside the sidewalls of the stacked gate structure are removed.