Patents by Inventor Chung-Po Hsu

Chung-Po Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a semiconductor device
    Patent number: 6274466
    Abstract: A method for fabricating a semiconductor device to increase the effective concentration of a doped region. A first dopant is implanted into a substrate. A second dopant is implanted into the substrate. The first dopant has a lower diffusion coefficient, a higher energy gap, and a higher atomic mass than those of the second dopant.
    Type: Grant
    Filed: June 9, 1999
    Date of Patent: August 14, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Chung-Po Hsu, Ming-Chi Lin
  • Method of forming a shallow trench isolation structure
    Patent number: 6238996
    Abstract: This invention provides a concave shallow trench isolation structure, and a fabricating method of a shallow trench isolation structure with concave bottom corners. The concave shape of the structure prevents stress centralization, and avoids leakage current or punch through in the source/drain regions.
    Type: Grant
    Filed: January 25, 1999
    Date of Patent: May 29, 2001
    Assignee: United Microelectronics Corp.
    Inventors: Guan-Jiun Liu, Shih-Ching Chen, Chi-Jui Sung, Chung-Po Hsu