Abstract: A pixel circuit includes: a photodetector, a signal adjustment circuit and a switch circuit. The photodetector is employed for generating an output signal in response to light that is incident thereon. The signal adjustment circuit is coupled to the photodetector, and employed for selectively adjusting the output signal to allow the output signal to have a plurality of different logarithmic functions in respect to an intensity of the light. The switch circuit is coupled to the signal adjustment circuit and the photodetector, and employed for coupling the photodetector to the signal adjustment circuit.

Abstract: An image sensor includes an M-shared pixel architecture, an N-shared pixel architecture and a switch unit, wherein M is an integer not smaller than two and N is an integer not smaller than two. The switch unit is coupled between a floating diffusion node of the M-shared pixel architecture and a floating diffusion node of the N-shared pixel architecture.

Abstract: A shared active pixel sensor includes a first shared photodiode, a first shared sense node, a first transfer gate, a first shared reset gate and a first shared source follower gate. The first shared photodiode consists of a first signal node and a second signal node. The first shared sense node is electrically connected to the first shared photodiode. The first transfer gate is disposed between the first signal node and the first shared sense node so that the first signal node and the first shared sense node together serve as a source and a drain controlled by the first transfer gate. The first shared reset gate is electrically connected to the first shared sense node. The first shared source follower gate is capable of reading a photocurrent from the first shared photodiode.

Abstract: A pixel circuit includes a plurality of pixel units, and one of the pixel units includes a photosensor, a readout circuit, and a switch circuit. The readout circuit is coupled to a supply voltage and the photosensor, which includes a floating diffusion node for storing data of the photosensor and an output node for outputting data of the floating diffusion node. The switch circuit is coupled between the photosensor and a tail node, wherein the tail node is coupled to the floating diffusion node of another pixel unit.

Abstract: A shared active pixel sensor with a shared photodiode, a shared sense node, a transfer gate, a shared reset gate and a shared source follower gate is disclosed. A shared photodiode includes at least a first signal node and a second signal node. A shared sense node electrically connected to the shared photodiode. A transfer gate disposed between the first signal node and the shared sense node to control the first signal node and the shared sense node. A shared reset gate is electrically connected to the shared sense node and a shared source follower gate reads a photocurrent from the shared photodiode.

Abstract: A pixel circuit includes a plurality of pixel units, and one of the pixel units includes a photosensor, a readout circuit, and a switch circuit. The readout circuit is coupled to a supply voltage and the photosensor, which includes a floating diffusion node for storing data of the photosensor and an output node for outputting data of the floating diffusion node. The switch circuit is coupled between the photosensor and a tail node, wherein the tail node is coupled to the floating diffusion node of another pixel unit.

Abstract: A shared active pixel sensor includes a first shared photodiode, a first shared sense node, a first transfer gate, a first shared reset gate and a first shared source follower gate. The first shared photodiode consists of a first signal node and a second signal node. The first shared sense node is electrically connected to the first shared photodiode. The first transfer gate is disposed between the first signal node and the first shared sense node so that the first signal node and the first shared sense node together serve as a source and a drain controlled by the first transfer gate. The first shared reset gate is electrically connected to the first shared sense node. The first shared source follower gate is capable of reading a photocurrent from the first shared photodiode.

Abstract: A shared active pixel sensor with a shared photodiode, a shared sense node, a transfer gate, a shared reset gate and a shared source follower gate is disclosed. A shared photodiode includes at least a first signal node and a second signal node. A shared sense node electrically connected to the shared photodiode. A transfer gate disposed between the first signal node and the shared sense node to control the first signal node and the shared sense node. A shared reset gate is electrically connected to the shared sense node and a shared source follower gate reads a photocurrent from the shared photodiode.

Abstract: A pixel circuit includes: a photodetector, a signal adjustment circuit and a switch circuit. The photodetector is employed for generating an output signal in response to light that is incident thereon. The signal adjustment circuit is coupled to the photodetector, and employed for selectively adjusting the output signal to allow the output signal to have a plurality of different logarithmic functions in respect to an intensity of the light. The switch circuit is coupled to the signal adjustment circuit and the photodetector, and employed for coupling the photodetector to the signal adjustment circuit.

Abstract: A semiconductor structure for suppressing a hot cluster is disclosed. An isolation well region which has an extension tip extending toward a substrate is formed in an epitaxial layer disposed on the substrate are of a first conductive type. A first element region and a second element region are disposed in the epitaxial layer to sandwich the isolation well region. The extension tip and the substrate together suppresses a leak current which forms a hot cluster and flows from the first element region via the extension tip to the second element region.

Abstract: An image sensor includes an M-shared pixel architecture, an N-shared pixel architecture and a switch unit, wherein M is an integer not smaller than two and N is an integer not smaller than two. The switch unit is coupled between a floating diffusion node of the M-shared pixel architecture and a floating diffusion node of the N-shared pixel architecture.

Abstract: A semiconductor structure for suppressing a hot cluster is disclosed. An isolation well region which has an extension tip extending toward a substrate is formed in an epitaxial layer disposed on the substrate are of a first conductive type. A first element region and a second element region are disposed in the epitaxial layer to sandwich the isolation well region. The extension tip and the substrate together suppresses a leak current which forms a hot cluster and flows from the first element region via the extension tip to the second element region.

Abstract: A capacitor structure for a pumping circuit includes a substrate, a U-shaped bottom electrode in the substrate, a T-shaped top electrode in the substrate and a dielectric layer disposed between the U-shaped bottom and T-shaped top electrode. The contact area of the capacitor structure between the U-shaped bottom and T-shaped top electrode is extended by means of the cubic engagement of the U-shaped bottom electrode and the T-shaped top electrode.

Abstract: An isolation structure is described, including a doped semiconductor layer disposed in a trench in a semiconductor substrate and having the same conductivity type as the substrate, gate dielectric between the doped semiconductor layer and the substrate, and a diffusion region in the substrate formed by dopant diffusion through the gate dielectric from the doped semiconductor layer. A device structure is also described, including the isolation structure and a vertical transistor in the substrate beside the isolation structure. The vertical transistor includes a first S/D region beside the diffusion region and a second S/D region over the first S/D region both having a conductivity type different from that of the doped semiconductor layer.

Abstract: An isolation structure is described, including a doped semiconductor layer disposed in a trench in a semiconductor substrate and having the same conductivity type as the substrate, gate dielectric between the doped semiconductor layer and the substrate, and a diffusion region in the substrate formed by dopant diffusion through the gate dielectric from the doped semiconductor layer. A device structure is also described, including the isolation structure and a vertical transistor in the substrate beside the isolation structure. The vertical transistor includes a first S/D region beside the diffusion region and a second S/D region over the first S/D region both having a conductivity type different from that of the doped semiconductor layer.

Abstract: A capacitor structure for a pumping circuit includes a substrate, a U-shaped bottom electrode in the substrate, a T-shaped top electrode in the substrate and a dielectric layer disposed between the U-shaped bottom and T-shaped top electrode. The contact area of the capacitor structure between the U-shaped bottom and T-shaped top electrode is extended by means of the cubic engagement of the U-shaped bottom electrode and the T-shaped top electrode.