Abstract: A device includes feed-forward clock circuitry to provide a receiver (RX) clock to a sampler circuit that samples a data lane of a set of RX data lanes, the feed-forward clock circuitry having a temperature-induced delay. The device also includes an RX phase-locked loop (PLL) coupled between the feed-forward clock circuitry and the sampler circuit. The RX PLL includes a phase interpolator positioned in a feedback path of the RX PLL. The phase interpolator has a negative delay that matches the temperature-induced delay of the feed-forward clock circuitry to cause the sampler circuit to cancel out the common noise shared between the feed-forward clock circuitry and the data lane.

Abstract: A device includes feed-forward clock circuitry to provide a receiver (RX) clock to a sampler circuit that samples a data lane of a set of RX data lanes, the feed-forward clock circuitry having a temperature-induced delay. The device also includes an RX phase-locked loop (PLL) coupled between the feed-forward clock circuitry and the sampler circuit. The RX PLL includes a phase interpolator positioned in a feedback path of the RX PLL. The phase interpolator has a negative delay that matches the temperature-induced delay of the feed-forward clock circuitry to cause the sampler circuit to cancel out the common noise shared between the feed-forward clock circuitry and the data lane.

Abstract: A polishing pad adapted for polishing an object and having a polishing track region is provided. The polishing pad includes a polishing layer and an adhesive layer. The polishing layer has a polishing surface and a rough bottom surface opposite to each other, and the rough bottom surface includes a plurality of discontinuous dents. The adhesive layer is adhered to the rough bottom surface.

Abstract: A polishing pad is provided. The polishing pad, disposed on a polishing platen and suitable for a polishing process, includes a polishing layer, an adhesive layer and at least one adhesion-reducing interface layer. The adhesive layer is disposed between the polishing layer and the polishing platen. The at least one adhesion-reducing interface layer is disposed between the adhesive layer and the polishing layer and/or disposed between the adhesive layer and the polishing platen. An area of the at least one adhesion-reducing interface layer is smaller than an area of the adhesive layer.

Abstract: A polishing pad is provided. The polishing pad, disposed on a polishing platen and suitable for a polishing process, includes a polishing layer, an adhesive layer and at least one adhesion-reducing interface layer. The adhesive layer is disposed between the polishing layer and the polishing platen. The at least one adhesion-reducing interface layer is disposed between the adhesive layer and the polishing layer and/or disposed between the adhesive layer and the polishing platen. An area of the at least one adhesion-reducing interface layer is smaller than an area of the adhesive layer.

Abstract: The present invention relates to a method for determining rapidly and accurately the polishing time of a chemical mechanical polishing process for polishing target wafers to avoid any problems of under-polishing or over-polishing. An aspect of the present invention is directed to a method for determining a chemical mechanical polishing time for removing a target polishing thickness H from an uneven surface of a target wafer. The method comprises polishing a control wafer by a chemical mechanical polishing to obtain a progressive relationship of polishing thickness and respective polishing time therefor. A first polishing time T1 is determined for removing a first thickness H1 from the target wafer, in which the first thickness H1 with substantially the uneven surface removed is smaller than the target polishing thickness H of the target wafer to be removed.

Abstract: The present invention relates to a method for determining rapidly and accurately the polishing time of a chemical mechanical polishing process for polishing target wafers to avoid any problems of under-polishing or over-polishing. An aspect of the present invention is directed to a method for determining a chemical mechanical polishing time for removing a target polishing thickness H from an uneven surface of a target wafer. The method comprises polishing a control wafer by a chemical mechanical polishing to obtain a progressive relationship of polishing thickness and respective polishing time therefor. A first polishing time T1 is determined for removing a first thickness H1 from the target wafer, in which the first thickness H1 with substantially the uneven surface removed is smaller than the target polishing thickness H of the target wafer to be removed.