Patents by Inventor Chung-Shi Liu

Chung-Shi Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10978382
    Abstract: In an embodiment, a device includes: a package component including: a first integrated circuit die; an encapsulant at least partially surrounding the first integrated circuit die; a redistribution structure on the encapsulant, the redistribution structure physically and electrically coupling the first integrated circuit die; a first module socket attached to the redistribution structure; an interposer attached to the redistribution structure adjacent the first module socket, the outermost extent of the interposer extending beyond the outermost extent of the redistribution structure; and an external connector attached to the interposer.
    Type: Grant
    Filed: August 1, 2019
    Date of Patent: April 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Hui Lai, Shu-Rong Chun, Kuo Lung Pan, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 10978370
    Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: April 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hao-Jan Pei, Wei-Yu Chen, Chia-Shen Cheng, Chih-Chiang Tsao, Cheng-Ting Chen, Chia-Lun Chang, Chih-Wei Lin, Hsiu-Jen Lin, Ching-Hua Hsieh, Chung-Shi Liu
  • Patent number: 10971460
    Abstract: An embodiment package comprises an integrated circuit die encapsulated in an encapsulant, a patch antenna over the integrated circuit die, and a dielectric feature disposed between the integrated circuit die and the patch antenna. The patch antenna overlaps the integrated circuit die in a top-down view. The thickness of the dielectric feature is in accordance with an operating bandwidth of the patch antenna.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: April 6, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Kai-Chiang Wu, Chung-Shi Liu, Shou Zen Chang, Chao-Wen Shih
  • Publication number: 20210098384
    Abstract: Package structures and methods for forming the same are provided. The package structure includes an integrated circuit die and a package layer surrounding the integrated circuit die. The package structure also includes a redistribution structure over the package layer and electrically connected to the integrated circuit die. The redistribution structure includes a passivation layer and a conductive layer formed in the passivation layer. The integrated circuit die further includes a connector formed over the conductive layer and covered a top surface of the passivation layer. In addition, a bottom surface of the connector and a top surface of the connector are both wider than a neck portion of the connector.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 1, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Da TSAI, Cheng-Ping LIN, Wei-Hung LIN, Chih-Wei LIN, Ming-Da CHENG, Ching-Hua HSIEH, Chung-Shi LIU
  • Publication number: 20210098353
    Abstract: A semiconductor package includes an interconnect structure including a redistribution structure, an insulating layer over the redistribution structure, and conductive pillars on the insulating layer, wherein the conductive pillars are connected to the redistribution structure, wherein the interconnect structure is free of active devices, a routing substrate including a routing layer over a core substrate, wherein the interconnect structure is bonded to the routing substrate by solder joints, wherein each of the solder joints bonds a conductive pillar of the conductive pillars to the routing layer, an underfill surrounding the conductive pillars and the solder joints, and a semiconductor device including a semiconductor die connected to a routing structure, wherein the routing structure is bonded to an opposite side of the interconnect structure as the routing substrate.
    Type: Application
    Filed: February 7, 2020
    Publication date: April 1, 2021
    Inventors: Jiun Yi Wu, Chen-Hua Yu, Chung-Shi Liu
  • Publication number: 20210098395
    Abstract: A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.
    Type: Application
    Filed: December 14, 2020
    Publication date: April 1, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Yu Kuo, Ching-Hua Hsieh, Chen-Hua Yu, Chung-Shi Liu, Yi-Yang Lei, Wei-Jie Huang
  • Patent number: 10964641
    Abstract: A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Wei Lin, Ming-Da Cheng
  • Patent number: 10964663
    Abstract: A method includes bringing into contact respective first sides of a plurality of dies and a die attach film on a major surface of a carrier wafer, and simultaneously heating portions of the die attach film contacting the plurality of dies in order to simultaneously bond the plurality of dies to the die attach film.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: March 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Shing-Chao Chen, Chung-Shi Liu, Ming-Da Cheng
  • Publication number: 20210091047
    Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.
    Type: Application
    Filed: December 7, 2020
    Publication date: March 25, 2021
    Inventors: Meng-Tse Chen, Chung-Shi Liu, Chih-Wei Lin, Hui-Min Huang, Hsuan-Ting Kuo, Ming-Da Cheng
  • Publication number: 20210091059
    Abstract: A semiconductor package includes a first die; a first redistribution structure over the first die, the first redistribution structure being conterminous with the first die; a second die over the first die, a first portion of the first die extending beyond a lateral extent of the second die; a conductive pillar over the first portion of the first die and laterally adjacent to the second die, the conductive pillar electrically coupled to first die; a molding material around the first die, the second die, and the conductive pillar; and a second redistribution structure over the molding material, the second redistribution structure electrically coupled to the conductive pillar and the second die.
    Type: Application
    Filed: November 18, 2020
    Publication date: March 25, 2021
    Inventors: Yu-Chia Lai, Kuo Lung Pan, Hung-Yi Kuo, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Publication number: 20210082827
    Abstract: A method of forming a semiconductor device includes arranging a semi-finished substrate, which has been tested and is known to be good, on a carrier substrate. Encapsulating the semi-finished substrate in a first encapsulant and arranging at least one semiconductor die over the semi-finished substrate. Electrically coupling at least one semiconductor component of the at least one semiconductor die to the semi-finished substrate and encasing the at least one semiconductor die and portions of the first encapsulant in a second encapsulant. Removing the carrier substrate from the semi-finished substrate and bonding a plurality of external contacts to the semi-finished substrate.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Inventors: Jiun Yi Wu, Chen-Hua Yu, Chung-Shi Liu, Chien-Hsun Lee
  • Publication number: 20210082871
    Abstract: Integrated fan-out devices, wafer level packages, and methods of manufacturing the same are described herein. Die-attach pads and leveling film are used to attach a plurality of heterogeneous semiconductor dies to a substrate to align external contacts of the semiconductor dies at a first level. The leveling film may also be used during deposition of an encapsulant to at least partially fill a gap between the semiconductor dies. Once the leveling film is removed, a protection layer is formed over the semiconductor dies and within a recess of the encapsulant left behind by the leveling film during encapsulation. A redistribution layer and external connectors are formed over the protection layer to form the InFO device and an interposer may be attached to the redistribution layer to form the wafer level package.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Jiun Yi Wu, Chen-Hua Yu, Chung-Shi Liu
  • Publication number: 20210081636
    Abstract: A fingerprint sensor package and method are provided. The fingerprint sensor package comprises a fingerprint sensor along with a fingerprint sensor surface material and electrical connections from a first side of the fingerprint sensor to a second side of the fingerprint sensor. A high voltage chip is connected to the fingerprint sensor and then the fingerprint sensor package with the high voltage chip are connected to a substrate, wherein the substrate has an opening to accommodate the presence of the high voltage chip.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Inventors: Chen-Hua Yu, Yu-Feng Chen, Chih-Hua Chen, Hao-Yi Tsai, Chung-Shi Liu
  • Publication number: 20210082888
    Abstract: A package includes a first package and a second package over and bonded to the first package. The first package includes a first device die, and a first encapsulant encapsulating the first device die therein. The second package includes an Independent Passive Device (IPD) die, and a second encapsulant encapsulating the IPD die therein. The package further includes a power module over and bonded to the second package.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Yu-Chia Lai, Cheng-Chieh Hsieh, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 10950514
    Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.
    Type: Grant
    Filed: March 25, 2020
    Date of Patent: March 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Chih-Wei Lin, Wei-Hung Lin, Ming-Da Cheng
  • Patent number: 10950572
    Abstract: A method includes bringing into contact respective first sides of a plurality of dies and a die attach film on a major surface of a carrier wafer, and simultaneously heating portions of the die attach film contacting the plurality of dies in order to simultaneously bond the plurality of dies to the die attach film.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: March 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Shing-Chao Chen, Chung-Shi Liu, Ming-Da Cheng
  • Patent number: 10950519
    Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: March 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Sung Huang, Ming Hung Tseng, Yen-Liang Lin, Hao-Yi Tsai, Chi-Ming Tsai, Chung-Shi Liu, Chih-Wei Lin, Ming-Che Ho
  • Publication number: 20210074627
    Abstract: A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.
    Type: Application
    Filed: November 23, 2020
    Publication date: March 11, 2021
    Inventors: Chung-Shi Liu, Chen-Hua Yu
  • Publication number: 20210074694
    Abstract: A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.
    Type: Application
    Filed: November 16, 2020
    Publication date: March 11, 2021
    Inventors: Yu-Chih Huang, Chi-Hui Lai, Ban-Li Wu, Ying-Cheng Tseng, Ting-Ting Kuo, Chih-Hsuan Tai, Hao-Yi Tsai, Chuei-Tang Wang, Chung-Shi Liu, Chen-Hua Yu, Chiahung Liu
  • Publication number: 20210066242
    Abstract: A package includes a package substrate, an interposer over and bonded to the package substrate, a first wafer over and bonding to the interposer, and a second wafer over and bonding to the first wafer. The first wafer has independent passive device dies therein. The second wafer has active device dies therein.
    Type: Application
    Filed: March 2, 2020
    Publication date: March 4, 2021
    Inventors: Chen-Hua Yu, Kuo Lung Pan, Shu-Rong Chun, Chi-Hui Lai, Tin-Hao Kuo, Hao-Yi Tsai, Chung-Shi Liu