Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: In an embodiment, a device includes: a package component including: a first integrated circuit die; an encapsulant at least partially surrounding the first integrated circuit die; a redistribution structure on the encapsulant, the redistribution structure physically and electrically coupling the first integrated circuit die; a first module socket attached to the redistribution structure; an interposer attached to the redistribution structure adjacent the first module socket, the outermost extent of the interposer extending beyond the outermost extent of the redistribution structure; and an external connector attached to the interposer.

Abstract: A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.

Abstract: An embodiment package comprises an integrated circuit die encapsulated in an encapsulant, a patch antenna over the integrated circuit die, and a dielectric feature disposed between the integrated circuit die and the patch antenna. The patch antenna overlaps the integrated circuit die in a top-down view. The thickness of the dielectric feature is in accordance with an operating bandwidth of the patch antenna.

Abstract: Photonic devices and methods of manufacture are provided. In embodiments a fill material and/or a secondary waveguide are utilized in order to protect other internal structures such as grating couplers from the rigors of subsequent processing steps. Through the use of these structures at the appropriate times during the manufacturing process, damage and debris that would otherwise interfere with the manufacturing process of the device or operation of the device can be avoided.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: In an embodiment, a device includes: a semiconductor device; and a redistribution structure including: a first dielectric layer; a first grounding feature on the first dielectric layer; a second grounding feature on the first dielectric layer; a first pair of transmission lines on the first dielectric layer, the first pair of transmission lines being laterally disposed between the first grounding feature and the second grounding feature, the first pair of transmission lines being electrically coupled to the semiconductor device; a second dielectric layer on the first grounding feature, the second grounding feature, and the first pair of transmission lines; and a third grounding feature extending laterally along and through the second dielectric layer, the third grounding feature being physically and electrically coupled to the first grounding feature and the second grounding feature, where the first pair of transmission lines extend continuously along a length of the third grounding feature.

Abstract: In an embodiment, a method includes: aligning a first package component with a second package component, the first package component having a first region and a second region, the first region including a first conductive connector, the second region including a second conductive connector; performing a first laser shot on a first portion of a top surface of the first package component, the first laser shot reflowing the first conductive connector of the first region, the first portion of the top surface of the first package component completely overlapping the first region; and after performing the first laser shot, performing a second laser shot on a second portion of the top surface of the first package component, the second laser shot reflowing the second conductive connector of the second region, the second portion of the top surface of the first package component completely overlapping the second region.

Abstract: A method of manufacturing a semiconductor structure is provided. The method includes providing a first substrate including a plurality of conductive bumps disposed over the first substrate; providing a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the plurality of conductive bumps is exposed through the patterned adhesive; bonding the first substrate with the second substrate; and singulating a chip from the first substrate.

Abstract: Package structures and methods of forming the same are disclosed. The package structure includes a package, a device and a screw. The package includes a plurality of dies, an encapsulant encapsulating the plurality of dies, and a redistribution structure over the plurality of dies and the encapsulant. The device is disposed over the package, wherein the dies and the encapsulant are disposed between the device and the redistribution structure. The screw penetrates through the package and the device.

Abstract: According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.

Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.

Abstract: A method includes encapsulating a plurality of package components in an encapsulant, and forming a first plurality of redistribution layers over and electrically coupling to the plurality of package components. The first plurality of redistribution layers have a plurality of power/ground pad stacks, with each of the plurality of power/ground pad stacks having a pad in each of the first plurality of redistribution layers. The plurality of power/ground pad stacks include a plurality of power pad stacks, and a plurality of ground pad stacks. At least one second redistribution layer is formed over the first plurality of redistribution layers. The second redistribution layer(s) include power lines and electrical grounding lines electrically connecting to the plurality of power/ground pad stacks.

Abstract: A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.

Abstract: A semiconductor package includes electric integrated circuit dies, photoelectric integrated circuit dies, and an inter-chip waveguide. The electric integrated circuit dies are laterally encapsulated by a first insulating encapsulant. The photoelectric integrated circuit dies are laterally encapsulated by a second insulating encapsulant. Each one of photoelectric integrated circuit dies includes an optical input/output terminal. The inter-chip waveguide is disposed over the second insulating encapsulant, wherein the photoelectric integrated circuit dies are optically communicated with each other through the inter-chip waveguide.

Abstract: A method for forming a package structure is provided. The method includes forming a protective layer to surround a semiconductor die and forming a conductive structure over the protective layer. The method also includes disposing a polymer-containing material over the protective layer to partially surround the conductive structure. The method further includes curing the polymer-containing material to form a warpage-control element.

Abstract: A semiconductor package includes a semiconductor device including a first UBM structure, wherein the first UBM structure includes multiple first conductive strips, the first conductive strips extending in a first direction, multiple second conductive strips separated from and interleaved with the multiple first conductive strips, the second conductive strips extending in the first direction, wherein the multiple first conductive strips are offset in the first direction from the multiple second conductive strips by a first offset distance, and a substrate including a second UBM structure, the second UBM structure including multiple third conductive strips, each one of the multiple third conductive strips bonded to one of the multiple first conductive strips or one of the multiple second conductive strips.

Abstract: Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is an interconnect structure including a post-passivation interconnect (PPI) over a first substrate and a conductive connector on the PPI. The interconnect structure further includes a molding compound on a top surface of the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound, and a second substrate over the conductive connector, the second substrate being mounted to the conductive connector.

Abstract: A package structure including a first redistribution circuit structure, a semiconductor die, first antennas and second antennas is provided. The semiconductor die is located on and electrically connected to the first redistribution circuit structure. The first antennas and the second antennas are located over the first redistribution circuit structure and electrically connected to the semiconductor die through the first redistribution circuit structure. A first group of the first antennas are located at a first position, a first group of the second antennas are located at a second position, and the first position is different from the second position in a stacking direction of the first redistribution circuit structure and the semiconductor die.