Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Abstract: A fixation structure of a sleeve tool is provided and includes a universal joint and a universal socket. The universal joint has a surface and a universal joint hole thereunder. The universal joint hole holds therein a spring and a ball. The universal joint has a radial length including a distance by which the ball protrudes from the surface. The universal socket has a connection hole for receiving and engaging with the universal joint and has an inner side. A recess is disposed under the inner side of the universal socket. The connection hole has a hole diameter. The ratio of the radial length to the hole diameter is greater than 0.902 to prevent the ball from retracting completely into the recess even when a user pulls the universal joint 20 by hand, thereby preventing the universal joint from escaping from the connection hole of the universal socket.

Abstract: An electricity detecting and testing device includes a detecting device having an antenna to detect signals of either an electric field or an electromagnetic field, signal generating device for generating indicating signals, two conductors, one or more batteries, and a switch coupled to the batteries, to selectively couple the batteries to either the detecting device or the conductors. The conductors may be used to test whether the electric members have been damaged or not. The detecting device may be used to detect whether an electric current or energy has been supplied through the detected electric facilities or not.

Abstract: The present invention is an adjustable sleeve barrel structure comprising of a sleeve head, a sleeve body, and a set of pawls. The sleeve head is coupled on the bottom with the sleeve body, and both of them can rotate freely. The sleeve body has multiple slide rails distributed on its inner wall evenly The pawls slide in these slide rails, and the shafts on the top of these pawls extrude to the space designed between the sleeve head and the sleeve body. Connected to the shafts are corresponding connecting rods, which have corresponding pins fixed onto the sleeve head. When the sleeve head rotates, it drives the pawls through the connecting rods to open/close simultaneously. In this way, when the operator turn the sleeve barrel clockwise/anti-clockwise, the pawls will screw a nut down/up together, which is convenient and practical.

Abstract: The present invention is an adjustable sleeve barrel structure comprising of a sleeve head, a sleeve body, and a set of pawls. The sleeve head is coupled on the bottom with the sleeve body, and both of them can rotate freely. The sleeve body has multiple slide rails distributed on its inner wall evenly. The pawls slide in these slide rails, and the shafts on the top of these pawls extrude to the space designed between the sleeve head and the sleeve body. Connected to the shafts are corresponding connecting rods, which have corresponding pins fixed onto the sleeve head. When the sleeve head rotates, it drives the pawls through the connecting rods to open/close simultaneously. In this way, when the operator turn the sleeve barrel clockwise/anti-clockwise, the pawls will screw a nut down/up together, which is convenient and practical.

Abstract: A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insulating material layer such as SiOx or SixNy overlying and protecting the channel portion of the polysilicon gate. Any possible contamination by residual photoresist material after a photoresist removal step on the channel portion of the polysilicon gate can thus be avoided. Furthermore, deficiencies such as dopant ions out-diffusion and lateral diffusion can be avoided. The leakage current of the thin film transistors formed by the present invention method is significantly reduced when compared to those formed by a conventional method.

Abstract: A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insulating material layer such as SiOx or SixNy overlying and protecting the channel portion of the polysilicon gate. Any possible contamination by residual photoresist material after a photoresist removal step on the channel portion of the polysilicon gate can thus be avoided. Furthermore, deficiencies such as dopant ions out-diffusion and lateral diffusion can be avoided. The leakage current of the thin film transistors formed by the present invention method is significantly reduced when compared to those formed by a conventional method.

Abstract: A tool includes a handle and a frame is disengagably connected to the handle. A head having a wrench device is pivotally connected to the frame and a hammer piece is connected to the head. The frame has two arms and each arm having a plurality of apertures and the head has a ball extending from each one of two sides thereof so as to be engaged with one of the apertures. The handle has a blade slidably received therein and can be extended from the handle when the head and the frame are removed from the handle.

Abstract: A high-temperature electrochemical etching apparatus containing a workpiece holder, which contains a first base plate and a second base plate to be joined together by screws, the first base plate having a recess on the front face thereof for receiving and retaining the workpiece, and both the first and second plates having a through hole to receive a contact electrode, which is electrically connected to a conductor wire. The second base plate has a protective wire sleeve fixedly inserted therein to allow the conductor wire to conduct electricity to the workpiece in a protectively sealed manner. A memory alloy coil and a buffer spring are provided between the contact electrode and the conductor wire in such a manner that the contact electrode is in a normally removed position from the workpiece until during high-temperature electrochemical etching operations, at which time, the memory alloy coil will expand thereby allowing electric voltage to be transferred to the workpiece.