Patents by Inventor Chung song Kim
Chung song Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170229398Abstract: A light emitting device according to an embodiment includes a substrate; first to Mth light emitting cells (where M is a positive integer of two or more) which are arranged on the substrate so as to be spaced apart from each other; and first to (M?1)th interconnection wires which electrically connect the first to Mth light emitting cells in series, wherein an mth light emitting cell (where 1?m?M) includes a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer, which are sequentially arranged on the substrate, and wherein an nth interconnection wire (where 1?n?M?1) interconnects the first conductive type semiconductor of the nth light emitting cell with the second conductive type semiconductor of the (n+1)th light emitting cell, and has a plurality of first branch wires which are spaced apart from each other.Type: ApplicationFiled: August 11, 2015Publication date: August 10, 2017Applicant: LG INNOTEK CO., LTD.Inventors: Sung Kyoon KIM, Chung Song KIM, Ji Hyung MOON
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Patent number: 9673354Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.Type: GrantFiled: May 29, 2015Date of Patent: June 6, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Ji Hyung Moon, Sang Youl Lee, Bum Doo Park, Chung Song Kim, Sang Rock Park, Byung Hak Jeong, Tae Yong Lee
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Patent number: 9640726Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.Type: GrantFiled: January 31, 2014Date of Patent: May 2, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Sang Youl Lee, Ji Hyung Moon, June O Song, Kwang Ki Choi, Chung Song Kim, Hwan Hee Jeong
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Patent number: 9634192Abstract: Disclosed are a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. The light emitting device may include a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, an ohmic layer on the second conductive semiconductor layer, an insulating layer on the ohmic layer, a first branch electrode electrically connected with the first conductive semiconductor layer, a first pad electrode connected with the first branch electrode for electrical connection with the first conductive semiconductor layer, a second pad electrode in contact with the ohmic layer through the insulating layer, a second branch electrode connected with the second pad electrode on the insulating layer, and a second through electrode passing through the insulating layer to connect the second branch electrode with the ohmic layer.Type: GrantFiled: March 18, 2015Date of Patent: April 25, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Ji Hyung Moon, Myeong Soo Kim, Chung Song Kim
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Publication number: 20160043280Abstract: Disclosed are a light emitting device, a method of fabricating the same, a light emitting device package, and a lighting system. The light emitting device may include a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, an ohmic layer on the second conductive semiconductor layer, an insulating layer on the ohmic layer, a first branch electrode electrically connected with the first conductive semiconductor layer, a first pad electrode connected with the first branch electrode for electrical connection with the first conductive semiconductor layer, a second pad electrode in contact with the ohmic layer through the insulating layer, a second branch electrode connected with the second pad electrode on the insulating layer, and a second through electrode passing through the insulating layer to connect the second branch electrode with the ohmic layer.Type: ApplicationFiled: March 18, 2015Publication date: February 11, 2016Inventors: Ji Hyung MOON, Myeong Soo KIM, Chung Song KIM
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Publication number: 20150349220Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.Type: ApplicationFiled: May 29, 2015Publication date: December 3, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Ji Hyung MOON, Sang Youl LEE, Bum Doo PARK, Chung Song KIM, Sang Rock PARK, Byung Hak JEONG, Tae Yong LEE
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Patent number: 9041028Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.Type: GrantFiled: February 23, 2011Date of Patent: May 26, 2015Assignee: LG INNOTEK CO., LTD.Inventors: Jung Hyeok Bae, Byung Hak Jeong, Kyung Wook Park, Chung Song Kim
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Patent number: 8766287Abstract: The present invention relates to a light emitting device, a light emitting device package, and a lighting device with the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a second electrode layer formed on an underside of the light emitting structure connected to the second conductive type semiconductor layer electrically, a first electrode layer in contact with the first conductive type semiconductor layer passed through the second conductive type semiconductor layer and the active layer, and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer.Type: GrantFiled: September 23, 2011Date of Patent: July 1, 2014Assignee: LG Innotek Co., Ltd.Inventors: Ji Hyung Moon, Sang Youl Lee, Chung Song Kim, Kwang Ki Choi, June O Song
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Publication number: 20140145233Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.Type: ApplicationFiled: January 31, 2014Publication date: May 29, 2014Inventors: Sang Youl LEE, Ji Hyung MOON, June O SONG, Kwang Ki CHOI, Chung Song KIM, Hwan Hee JEONG
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Patent number: 8643040Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.Type: GrantFiled: May 6, 2011Date of Patent: February 4, 2014Assignee: LG Innotek Co., Ltd.Inventors: Sang Youl Lee, Ji Hyung Moon, June O Song, Kwang Ki Choi, Chung Song Kim, Hwan Hee Jeong
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Patent number: 8552452Abstract: Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and an electrode part connected to the pad part and that is provided on the light emitting structure, and a current blocking layer arranged between the second electrode layer and the light emitting structure in such a way that a part of the current block layer overlaps to correspond to the first electrode layer, wherein a width of the current blocking layer corresponding to the electrode part is different depending upon a clearance with the pad part.Type: GrantFiled: August 19, 2011Date of Patent: October 8, 2013Assignee: LG Innotek Co., Ltd.Inventors: Hwan Hee Jeong, Sang Youl Lee, Young kyu Jeong, Chung song Kim, June O Song, Kwang Ki Choi, Eun Joo Kim
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Patent number: 8269226Abstract: A light emitting device including a light emitting structure including a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer, and a first protective layer disposed on a side of the light emitting structure, wherein the first protective layer overlaps with the first conductive type semiconductor layer in a vertical direction.Type: GrantFiled: August 23, 2011Date of Patent: September 18, 2012Assignee: LG Innotek Co., Ltd.Inventors: Ji Hyung Moon, Sang Youl Lee, Chung song Kim, Kwang Ki Choi, June O Song
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Publication number: 20120138969Abstract: The present invention relates to a light emitting device, a light emitting device package, and a lighting device with the same. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a second electrode layer formed on an underside of the light emitting structure connected to the second conductive type semiconductor layer electrically, a first electrode layer in contact with the first conductive type semiconductor layer passed through the second conductive type semiconductor layer and the active layer, and an insulating layer formed between the second electrode layer and the first electrode layer, between the second conductive type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer.Type: ApplicationFiled: September 23, 2011Publication date: June 7, 2012Applicant: LG INNOTEK CO., LTD.Inventors: Ji Hyung Moon, Sang Youl Lee, Chung song Kim, June O Song, Kwang Ki Choi
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Publication number: 20120061704Abstract: Disclosed is a light emitting device including, a second electrode layer, a light emitting structure that includes a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer and that is provided on the second electrode layer, a first electrode layer that includes a pad part and an electrode part connected to the pad part and that is provided on the light emitting structure, and a current blocking layer arranged between the second electrode layer and the light emitting structure in such a way that a part of the current block layer overlaps to correspond to the first electrode layer, wherein a width of the current blocking layer corresponding to the electrode part is different depending upon a clearance with the pad part.Type: ApplicationFiled: August 19, 2011Publication date: March 15, 2012Applicant: LG INNOTEK CO., LTD.Inventors: Hwan Hee Jeong, Sang Youl LEE, Young kyu JEONG, Chung song KIM, June O SONG, Kwang Ki Choi, Eun Joo KIM
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Publication number: 20120001222Abstract: A light emitting device including a light emitting structure including a second conductive type semiconductor layer, an active layer, and a first conductive type semiconductor layer, and a first protective layer disposed on a side of the light emitting structure, wherein the first protective layer overlaps with the first conductive type semiconductor layer in a vertical direction.Type: ApplicationFiled: August 23, 2011Publication date: January 5, 2012Applicant: LG INNOTEK CO., LTD.Inventors: Ji Hyung MOON, Sang Youl LEE, Chung song KIM, Kwang Ki CHOI, June O. SONG
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Publication number: 20110248301Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.Type: ApplicationFiled: February 23, 2011Publication date: October 13, 2011Inventors: Jung Hyeok BAE, Byung Hak Jeong, Kyung Wook Park, Chung Song Kim
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Publication number: 20110210362Abstract: A light emitting device includes a light emitting structure including a second conduction type semiconductor layer, an active layer, and a first conduction type semiconductor layer, a second electrode layer arranged under the light emitting structure, a first electrode layer having at least portion extending to contact the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness.Type: ApplicationFiled: May 6, 2011Publication date: September 1, 2011Inventors: Sang Youl Lee, Ji Hyung Moon, June O. Song, Kwang Ki Choi, Chung Song Kim, Hwan Hee Jeong