Patents by Inventor Chung Ta Chen

Chung Ta Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Capping layers in metal gates of transistors
    Patent number: 12376361
    Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: July 29, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Ta Tang, Yi-Ting Wang, Chung Ta Chen, Hsien-Ming Lee
  • Capping Layers in Metal Gates of Transistors
    Publication number: 20220208984
    Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.
    Type: Application
    Filed: March 21, 2022
    Publication date: June 30, 2022
    Inventors: Tsung-Ta Tang, Yi-Ting Wang, Chung Ta Chen, Hsien-Ming Lee
  • Capping layers in metal gates of transistors
    Patent number: 11282938
    Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: March 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Ta Tang, Yi-Ting Wang, Chung Ta Chen, Hsien-Ming Lee
  • Capping Layers in Metal Gates of Transistors
    Publication number: 20200105895
    Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.
    Type: Application
    Filed: July 1, 2019
    Publication date: April 2, 2020
    Inventors: Tsung-Ta Tang, Yi-Ting Wang, Chung Ta Chen, Hsien-Ming Lee