Abstract: A method includes providing a workpiece. The workpiece includes a substrate, a first dielectric layer over the substrate, a lower contact feature vertically extending through the first dielectric layer, a second dielectric layer over the lower contact feature and the first dielectric layer, a third dielectric layer over the second dielectric layer, a metal-insulator-metal (MIM) structure over the third dielectric layer, and a fourth dielectric layer over the MIM structure. The method further includes performing a first etch process to form an opening through the fourth dielectric layer to expose the MIM structure; performing a second etch process to extend the opening through the MIM structure to expose the third dielectric layer; performing a third etch process to further extend the opening into the third dielectric layer; and performing a fourth etch process to further extend the opening through the second dielectric layer to expose the lower contact feature.