Abstract: In accordance with one aspect of the disclosure, a vehicle control system includes a user terminal, a server and a vehicle. The user terminal is configured to transmit user information to a Near Field Communication (NFC) device of the vehicle after an application execution, the server is configured to transmit vehicle movement information input from the user terminal to the vehicle when the user information transmitted from the vehicle is confirmed as pre-registered user information, and the vehicle is configured to move based on the vehicle movement information when a movement command is received.

Abstract: A multi-function switch for a vehicle that includes an operable rotary lever and a light control plate rotatably and integrally mounted on the rotary lever and having a plurality of slits. In addition, a light source radiates light through the light control plate and a photosensor receives the light radiated from the light source through the slits and generates output voltage signals that correspond to the quantities of the received light.

Abstract: A system for tracking copyright information of content and a method for controlling the same are provided. When a user creates multimedia content through an index file which allows the user to search for desired content through a keyword based on humans, things, time, and/or space, or edits content created by another to create edited content, the index file inherits copyright information of the content, thereby making it possible to perform keyword search of the content. In addition, copyright information of content is inherited as the content is transacted and edited, thereby making it possible to track and protect the copyright of content and also to perform proper distribution of the revenue for the sale of the content.

Abstract: The present invention relates to a system for extracting a specific portion of content. When a desired portion is extracted so that a content service can be provided, a plurality of users extract a beginning time and an ending time of a specific frame in the case of moving picture content and carry out a temporal indexing operation. When searching for the specific portion after extracting a beginning point and an ending point of the specific portion in case of still picture content and carrying out a spatial indexing operation, the plurality of users retrieve and display the specific portion from an indexed database. Therefore, the plurality of users can carry out the indexing operation for one file to organize a search database without correcting an original file and can extract the specific portion of content. Moreover, because the specific portion of content can be extracted and the extracted specific portion can be displayed and edited, all file formats can be controlled irrespective of file format.

Abstract: The invention relates to a method for releasing the fail-safe mode of a multi-function switch caused by a bad contact of a mono-directional series communication line between the multi-function switch and an in-panel controller, the method comprising the steps of: prompting the in-panel controller to turn into a fail-safe mode, record an error code, and stop the control of the multi-functions if a sleep mode signal is not inputted from the multi-function switch to the in-panel controller while the multi-function switch is in its sleep mode; and prompting the in-panel controller to determine whether the multi-function switch is in its normal status after turning into the fail-safe mode, to release the fail-safe mode if the multi-function switch is in its normal status and to control the multi-functions according to the data input from the multi-function switch.

Abstract: A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.

Abstract: A method for manufacturing a semiconductor device can form a thick lower electrode made of Pt. The method begins with the preparation of an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs. Thereafter, a seed layer is formed on top of the active matrix and a dummy oxide layer is formed on top of the seed layer. Then, the dummy oxide layer is patterned into a predetermined configuration, thereby exposing portions of the seed layer which are located on top of the conductive plugs. The exposed portions are filled with a conductive material to a predetermined thickness. The dummy oxide layer and portions of the seed layer which are not covered with the conductive material are removed, thereby obtaining lower electrodes. A capacitor dielectric layer is on the lower electrodes. Finally, an upper electrode layer is formed on the capacitor dielectric layer.

Abstract: During selective epitaxial growth processing using LPCVD equipment, a SiGe epitaxial layer and a Si epitaxial layer are sequentially formed so that lateral overgrowth that could occur in formation of only Si epitaxial layer can be effectively restricted. By adjusting Ge density, SiGe migration is induced at selective epitaxial growth temperatures for forming the conventional Si epitaxial layer. And, by utilizing the internal stress of SiGe and lattice mismatch between the SiGe epitaxial layer and the Si epitaxial layer, the lateral overgrowth is restricted. Furthermore, by hydrogen thermal processing, surface topology of the epitaxial layer is improved.

Abstract: A method for manufacturing a semiconductor device can form a thick lower electrode made of Pt. The method begins with the preparation of an active matrix provided with at least one transistor, a plurality of conductive plugs electrically connected to the transistors and an insulating layer formed around the conductive plugs. Thereafter, a seed layer is formed on top of the active matrix and a dummy oxide layer is formed on top of the seed layer. And then, the dummy oxide layer is patterned into a predetermined configuration, thereby exposing portions of the seed layer which are located on top of the conductive plugs. The exposed portions are filled with a conductive material to a predetermined thickness. And, the dummy oxide layer and portions of the seed layer which are not covered with the conductive material are removed, thereby obtaining lower electrodes. A capacitor dielectric layer is on the lower electrodes. Finally, an upper electrode layer is formed on the capacitor dielectric layer.

Abstract: A method for manufacturing an aluminum oxide film for use in a semiconductor device which includes the following steps: preparing a semiconductor substrate and setting the semiconductor substrate in a reaction chamber; supplying modified trimethyl aluminum (MTMA) as an aluminum source material into the reaction chamber so that it could be absorbed on the semiconductor substrate; discharging unreacted MTMA or by-product through a first pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status; supplying an oxygen source into the reaction chamber so that it could be absorbed on the semiconductor substrate; and discharging an unreacted oxygen source or by-product through a second pump by permitting nitrogen gas to flow into the reaction chamber and purging the chamber for vacuum status.

Abstract: The method of forming a polycide layer in a semiconductor device is provided. The method of forming a polycide layer comprises the steps of depositing a doped polysilicon layer on a silicon substrate on which an insulating layer is formed and depositing a tungsten silicide on the doped polysilicon layer, the doped polysilicon layer comprises a lower, intermediate and upper doped polysilicon layers sequentially formed, also the intermediate polysilicon layer has a lower concentration of impurity ion than the upper and lower polysilicon layers. The impurity ions contained within the upper and lower polysilicon layers are diffused into the intermediate layer having the lowest concentration of impurity during a subsequent annealing process, therefore the impurity ions contained within the upper and lower polysilicon layers are not diffused to the junction and the tungsten silicide.