Abstract: A semiconductor structure includes a substrate and a semiconductor channel layer over the substrate. The semiconductor structure includes a high-k gate dielectric layer over the semiconductor channel layer, a work function metal layer over the high-k gate dielectric layer, and a bulk metal layer over the work function metal layer. The work function metal layer includes a first portion and a second portion over the first portion. Both the first portion and the second portion are conductive. Materials included in the second portion are also included in the first portion. The first portion is doped with silicon at a first dopant concentration, and the second portion is not doped with silicon or is doped with silicon at a second dopant concentration lower than the first dopant concentration.

Abstract: Disclosed is a multi-purpose baby rocking chair which has a rocking mechanism powered by a DC motor. The rocking mechanism includes a rotary arm which is driven by the motor to turn upward and downward, causing the seat of the baby rocking chair connected to the rocking mechanism to swing up and down in a vertically reciprocating movement. The baby rocking chair can also be conveniently converted into a handcart.