Abstract: An optical engine module and a projection device are provided. The optical engine module includes a first prism, a light valve, a second prism, and a light-shielding element. The first prism is disposed on a transmission path of an illumination light beam. The light valve is disposed on the transmission path of the illumination light beam from the first prism. The light valve has a reflection surface suitable for converting the illumination light beam into an image beam. The second prism is located between the first prism and the light valve, and is disposed on the transmission path of the illumination light beam from the first prism and on a transmission path of the image beam from the light valve. The light-shielding element is located between the first prism and the second prism.

Abstract: An optical engine module and a projection device are provided. The optical engine module includes a first prism, a light valve, a second prism, and a light-shielding element. The first prism is disposed on a transmission path of an illumination light beam. The light valve is disposed on the transmission path of the illumination light beam from the first prism. The light valve has a reflection surface suitable for converting the illumination light beam into an image beam. The second prism is located between the first prism and the light valve, and is disposed on the transmission path of the illumination light beam from the first prism and on a transmission path of the image beam from the light valve. The light-shielding element is located between the first prism and the second prism.

Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.

Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.

Abstract: A near eye display device includes a display and a first waveguide element, the first waveguide element including a light incoming surface, a light exiting surface, a reflective inclined surface and beam splitting elements. An image beam provided by the display enters the first waveguide element via the light incoming surface and is reflected by the reflective inclined surface in the first waveguide element to the beam splitting elements, and is split by the beam splitting elements and leaves the first waveguide element via the light exiting surface. The reflective inclined surface has a first reflectivity distribution in a first incident angle range and a second reflectivity distribution in a second incident angle range. An angle in the second incident angle range is greater than an angle in the first incident angle range, and the first reflectivity distribution has a greater reflectivity average value than the second reflectivity distribution.

Abstract: The invention relates to a near eye display device. A first waveguide element includes first light splitting elements for splitting an image beam, an inclined surface, and an antireflection structure. The image beam enters the first waveguide element from a first light input surface. The image beam, after being reflected by the inclined surface, is transmitted to the first light splitting elements and leaves the first waveguide element from a first light output surface. A distance is provided between the first light input surface and a second light output surface. The antireflection structure is located in a connected region of the first light input surface and the inclined surface and is configured to eliminate the condition that a part of the image beam incident from the first light input surface is reflected twice on the inclined surface to solve the problem of ghost image and provide high display quality.

Abstract: A near eye display device includes a display and a first waveguide element, the first waveguide element including a light incoming surface, a light exiting surface, a reflective inclined surface and beam splitting elements. An image beam provided by the display enters the first waveguide element via the light incoming surface and is reflected by the reflective inclined surface in the first waveguide element to the beam splitting elements, and is split by the beam splitting elements and leaves the first waveguide element via the light exiting surface. The reflective inclined surface has a first reflectivity distribution in a first incident angle range and a second reflectivity distribution in a second incident angle range. An angle in the second incident angle range is greater than an angle in the first incident angle range, and the first reflectivity distribution has a greater reflectivity average value than the second reflectivity distribution.

Abstract: An opto-mechanical module, including a light valve, and first and second prisms is provided. The light valve and the first prism are disposed on a transmission path of the illumination beam. The second prism is disposed on transmission paths of the illumination and image beams, and located between the light valve and the first prism. The first prism does not overlap with the light valve in an extension direction of the reflection surface parallel to the light valve. The illumination beam does not pass through an optical element or a fixing glue on a transmission path between the first and second prisms. The shortest distance from an intersection point of the illumination beam entering the first prism to the light valve is smaller than that from an intersection point of the image beam exiting the second prism to the light valve. A projection device including the opto-mechanical module is provided.

Abstract: An imaging module includes a display element, a prism and an image displacement device. The display element includes an active display surface. The prism includes an optical surface. The image displacement device is disposed between the display element and the prism. The image displacement device includes an optical element, a carrier, a base and at least one actuator. The optical element is disposed on the carrier. The at least one actuator drives the optical element on the carrier to swing relative to the base.

Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.

Abstract: A projection device is provided, and the projection device includes an illumination system, a polarizing beam splitter, a reflection element, a ¼ wave plate, a reflective light valve disposed on the transmission path of the illumination beam and a projection lens disposed on a transmission path of the image beam, wherein the polarizing beam splitter, the reflection element and the ¼ wave plate are all disposed on a transmission path of the illumination beam. The illumination system emits an illumination beam. The illumination beam is transmitted to the ¼ wave plate and the reflection element after being reflected by the polarizing beam splitter, the illumination beam having a first polarization direction is modulated by the ¼ wave plate to have a second polarization direction. The reflective light valve modulates the illumination beam having the second polarization direction into an image beam having the first polarization direction.

Abstract: An imaging module includes a display element, a prism and an image displacement device. The display element includes an active display surface. The prism includes an optical surface. The image displacement device is disposed between the display element and the prism. The image displacement device includes an optical element, a carrier, a base and at least one actuator. The optical element is disposed on the carrier. The at least one actuator drives the optical element on the carrier to swing relative to the base.

Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.

Abstract: An optical system including a first optical waveguide device, and a second optical waveguide device is provided. The first optical waveguide device includes a first light entering surface, a first light exiting surface and a first beam splitter. An image light emitted from the display enters the first optical waveguide device through the first light entering surface. The second optical waveguide device includes a second light entering surface, a second light exiting surface and a second beam splitter. The second light entering surface faces the first light exiting surface. A gap is formed between the second light entering surface and the first light exiting surface. Besides, a head-mounted display using the optical system described above is also provided.

Abstract: A HMD device including a display device, a first waveguide element and a second waveguide element is provided. An image beam is projected to a projection target. The first waveguide element includes a plurality of first light splitting elements. The image beam coming from the display device is incident to the first waveguide element through a first light incident surface. The image beam is convergent to a first stop in the first waveguide element. The image beam leaves the first waveguide element through the first light exiting surface. The first stop is located in the first waveguide element. The second waveguide element includes a plurality of second light splitting elements. The image beam coming from the first waveguide element is incident to the second waveguide element through the second light incident surface.

Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.

Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.

Abstract: An optical system for receiving an image light is provided. A first optical waveguide device of the optical system includes a first light entering surface, a first light exiting surface and at least one beam splitter. A second optical waveguide device of the optical system includes a first surface, a second surface opposite to the first surface and at least one beam splitter. The image light enters the first optical waveguide device via the first light entering surface, and exits from the first optical waveguide device via the first light exiting surface. One part of the first surface is a second light entering surface, and the other part of the first surface is a second light exiting surface. The second surface has multiple optical microstructures.

Abstract: An optical system including a first optical waveguide device, and a second optical waveguide device is provided. The first optical waveguide device includes a first light entering surface, a first light exiting surface and a first beam splitter. An image light emitted from the display enters the first optical waveguide device through the first light entering surface. The second optical waveguide device includes a second light entering surface, a second light exiting surface and a second beam splitter. The second light entering surface faces the first light exiting surface. A gap is formed between the second light entering surface and the first light exiting surface. Besides, a head-mounted display using the optical system described above is also provided.

Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.