Patents by Inventor Chung Wei Chen
Chung Wei Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11964881Abstract: A method for making iridium oxide nanoparticles includes dissolving an iridium salt to obtain a salt-containing solution, mixing a complexing agent with the salt-containing solution to obtain a blend solution, and adding an oxidating agent to the blend solution to obtain a product mixture. A molar ratio of a complexing compound of the complexing agent to the iridium salt is controlled in a predetermined range so as to permit the product mixture to include iridium oxide nanoparticles.Type: GrantFiled: July 27, 2020Date of Patent: April 23, 2024Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Pu-Wei Wu, Yi-Chieh Hsieh, Han-Yi Wang, Kuang-Chih Tso, Tzu-Ying Chan, Chung-Kai Chang, Chi-Shih Chen, Yu-Ting Cheng
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Publication number: 20240113222Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.Type: ApplicationFiled: January 3, 2023Publication date: April 4, 2024Inventors: Yan-Yi Chen, Wu-Wei Tsai, Yu-Ming Hsiang, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
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Publication number: 20240113225Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.Type: ApplicationFiled: January 10, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wu-Wei Tsai, Yan-Yi Chen, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
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Patent number: 11946569Abstract: An actuating and sensing module is disclosed and includes a bottom plate, a gas pressure sensor, a thin gas transportation device and a cover plate. The bottom plate includes a pressure relief orifice, a discharging orifice and a communication orifice. The gas pressure sensor is disposed on the bottom plate and seals the communication orifice. The thin gas transportation device is disposed on the bottom plate and seals the pressure relief orifice and the discharging orifice. The cover plate is disposed on the bottom plate and covers the gas pressure sensor and the thin gas-transportation device. The cover plate includes an intake orifice. The thin gas transportation device is driven to inhale gas through the intake orifice, the gas is then discharged through the discharging orifice by the thin gas transportation device, and a pressure change of the gas is sensed by the gas pressure sensor.Type: GrantFiled: April 19, 2021Date of Patent: April 2, 2024Assignee: MICROJET TECHNOLOGY CO., LTD.Inventors: Hao-Jan Mou, Shih-Chang Chen, Jia-Yu Liao, Hung-Hsin Liao, Chung-Wei Kao, Chi-Feng Huang, Yung-Lung Han, Chang-Yen Tsai, Wei-Ming Lee
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Publication number: 20240103520Abstract: A method of controlling movement of an autonomous mobile apparatus including a driving module, a processor, and a positioning module includes steps of: the processor moving the autonomous mobile apparatus at a default speed from a first location toward a second location along a straight path; the positioning module obtaining data related to a current location; when the processor determines that a distance between the current location and the second location is greater than a predetermined distance, the processor obtaining a deviating direction and a minimum distance of the current location relative to the straight path; the processor setting a movement speed and an angular velocity based on the deviating direction, a tolerant distance, the minimum distance, and the default speed; and the processor controlling the driving apparatus to move the autonomous mobile apparatus at the movement speed and turning the autonomous mobile apparatus at the angular velocity.Type: ApplicationFiled: September 21, 2023Publication date: March 28, 2024Inventors: Chien-Tung CHEN, Chung-Hou WU, Chao-Cheng CHEN, Wen-Wei CHIANG
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Publication number: 20240100352Abstract: A phototherapy device includes a base, at least one light conversion device and a light source module. The base has an installation slot. The light conversion device is detachably arranged in the installation slot. Each light conversion device includes a plurality of light conversion patterns. The light source module is arranged on a side of the base and configured to provide an excitation beam to the light conversion patterns, so that each of the light conversion patterns emits a converted beam. In this way, the light conversion device of the phototherapy device can be replaced according to the user's needs.Type: ApplicationFiled: September 19, 2023Publication date: March 28, 2024Inventors: CHUNG-JEN OU, YU-MIN CHEN, MING-WEI TSAI, CHIEN-CHIH CHEN
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Patent number: 11935854Abstract: A method for forming a bonded semiconductor structure is disclosed. A first device wafer having a first bonding layer and a first bonding pad exposed from the first bonding layer and a second device wafer having a second bonding layer and a second bonding pad exposed from the second bonding layer are provided. Following, a portion of the first bonding pad is removed until a sidewall of the first bonding layer is exposed, and a portion of the second bonding layer is removed to expose a sidewall of the second bonding pad. The first device wafer and the second device wafer are then bonded to form a dielectric bonding interface between the first bonding layer and the second bonding layer and a conductive bonding interface between the first bonding pad and the second bonding pad. The conductive bonding interface and the dielectric bonding interface comprise a step-height.Type: GrantFiled: March 8, 2023Date of Patent: March 19, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chung-Sung Chiang, Chia-Wei Liu, Yu-Ruei Chen, Yu-Hsiang Lin
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Publication number: 20240084455Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.Type: ApplicationFiled: February 8, 2023Publication date: March 14, 2024Inventors: Che Wei YANG, Chih Cheng SHIH, Kuo Liang LU, Yu JIANG, Sheng-Chan LI, Kuo-Ming WU, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
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Publication number: 20240076422Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.Type: ApplicationFiled: September 1, 2023Publication date: March 7, 2024Inventors: Jing-Cherng TSAI, Jen-Long WU, Wen-Hao KANG, Kuei-Pin LIN, Jing-Yu LEE, Jun-Ye HONG, Zih-Yu SHIH, Cheng-Hung CHIANG, Gang-Wei SHEN, Yu-Chuan SUNG, Chung-Hua WENG, Hsing-Ya CHEN
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Publication number: 20240077564Abstract: A method of using NC-MRA to generate pelvic veins images and measure rate of blood flow includes subjecting a lay patient to undergo magnetic resonance scan in cooperation with an ECG monitor and a respiration monitor; scanning coronary sections and transverse sections of kidney veins, lower cavity veins, common iliac veins, and external iliac veins to generate two-dimensional images wherein the two-dimensional images use balanced turbo field echo wave sequence; scanning coronary sections of common cardinal veins of abdominal cavity to generate three-dimensional images wherein the three-dimensional images use fast spin-echo short tau inversion recovery wave sequence and sample signals when the ECG monitor monitors myocardial contractility; and using quantification phase-contrast analysis to measure blood flowing through the transverse sections of the veins in a two-dimensional scan.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicant: Chang Gung Memorial Hospital, ChiayiInventors: Chien-Wei Chen, Yao-Kuang Huang, Chung-Yuan Lee, Yeh-Giin Ngo, Yin-Chen Hsu
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Patent number: 11923396Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.Type: GrantFiled: April 18, 2022Date of Patent: March 5, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
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Publication number: 20230233305Abstract: The present invention provides the method of meliorating or treating inflammatory in an oral cavity of subjects, comprising steps of excising the inflamed oral soft tissue, and promoting autophagy in an area of wound by application of vitamin D to effectively recovering the wound.Type: ApplicationFiled: May 5, 2022Publication date: July 27, 2023Inventors: Chung-Wei Chen, Min-Jen Chiang
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Patent number: 9135019Abstract: A hardware parameter configuring method operating under in an Extensible Firmware Interface-based basic input/output system mode includes reading a currently-existing hardware profile including multiple hardware parameters; reading a preloading hardware profile including multiple hardware parameters; comparing the currently-existing hardware parameters with their corresponding preloading hardware parameters to generate a comparison result; displaying the comparison result through a graphical interface; and loading the preloading hardware parameters to the hardware units to replace the currently-existing hardware parameters when receiving confirmation signal.Type: GrantFiled: December 31, 2012Date of Patent: September 15, 2015Assignee: MSI COMPUTER(SHENZHEN)CO., LTD.Inventors: Chung-Wei Chen, Hsuen-Yung Chen
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Patent number: 8761956Abstract: A computer and a control method for smart fan thereof are provided, wherein the computer includes a processor configured to control a smart fan under an UETFI bios mode. A sensed temperature value from a temperature sensor, and a current speed value of the smart fan are acquired. A real-time temperature curve and a real-time speed curve are traced in a dynamic updating zone of a graphical interface respectively according to the current temperature and the current speed value. A first control point and a second control point, which correspond to the smart fan, are obtained via a control zone of the graphical interface. A control curve is traced in the graphical interface according to the first and second control points. The speed of the smart fan is controlled according to the control curve.Type: GrantFiled: December 11, 2012Date of Patent: June 24, 2014Assignee: MSI Computer (Shenzhen) Co., Ltd.Inventors: Chung-Wei Chen, Wei-Cheng Wu
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Publication number: 20140095854Abstract: A hardware parameter configuring method operating under in an Extensible Firmware Interface-based basic input/output system mode includes reading a currently-existing hardware profile including multiple hardware parameters; reading a preloading hardware profile including multiple hardware parameters; comparing the currently-existing hardware parameters with their corresponding preloading hardware parameters to generate a comparison result; displaying the comparison result through a graphical interface; and loading the preloading hardware parameters to the hardware units to replace the currently-existing hardware parameters when receiving confirmation signal.Type: ApplicationFiled: December 31, 2012Publication date: April 3, 2014Applicant: MSI ELECTRONIC (KUN SHAN) CO., LTDInventors: Chung-Wei CHEN, Hsuen-Yung CHEN
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Publication number: 20140054024Abstract: A computer and a control method for smart fan thereof are provided, wherein the computer includes a processor configured to control a smart fan under an UETFI bios mode. A sensed temperature value from a temperature sensor, and a current speed value of the smart fan are acquired. A real-time temperature curve and a real-time speed curve are traced in a dynamic updating zone of a graphical interface respectively according to the current temperature and the current speed value. A first control point and a second control point, which correspond to the smart fan, are obtained via a control zone of the graphical interface. A control curve is traced in the graphical interface according to the first and second control points. The speed of the smart fan is controlled according to the control curve.Type: ApplicationFiled: December 11, 2012Publication date: February 27, 2014Applicant: MSI Electronic (Kun Shan) Co., Ltd.Inventors: Chung-Wei CHEN, Wei-Cheng WU
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Patent number: 8283638Abstract: A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.Type: GrantFiled: September 16, 2009Date of Patent: October 9, 2012Assignee: National Central UniversityInventors: Gou-Chung Chi, Ping-Jung Huang, Chung-Wei Chen, Ching-Jen Pan, Yu-Lun Liu, Fu-Chun Tsao
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Publication number: 20110012024Abstract: A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.Type: ApplicationFiled: September 16, 2009Publication date: January 20, 2011Applicant: National Central UniversityInventors: Gou-Chung Chi, Ping-Jung Huang, Chung-Wei Chen, Ching-Jen Pan, Yu-Lun Liu, Fu-Chun Tsao
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Patent number: 7731313Abstract: The present invention discloses a locating structure for slide rail, comprising a guide rail which is a rectangular plate disposed with a respective inward-turn slide groove on both sides of its bottom plate, wherein at least two locating holes at the predetermined locating positions are machined to form on the surface of the bottom plate; a slider which is a short frame whose slide plate on top extends to form a respective slide wing on its both sides corresponding to the slide grooves to form a socketingly connection, wherein a respective receiving hole is manufactured to form on both sides of the slide plate, a spring frame, disposed on the bottom of the slide plate and manufactured to form a ball hole on its bottom to socketingly connected with a rolling ball, extends upward an predetermined length from its both sides, respectively, and then bends inward to form a turn portion, respectively, one of which connects downward with a spring plate whose bottom contacts with the rolling ball and the other of whiType: GrantFiled: August 22, 2006Date of Patent: June 8, 2010Assignee: Jarllytec Co., Ltd.Inventor: Chung Wei Chen
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Patent number: 7613485Abstract: A sliding module comprises a sliding member having a transversal plate disposed transversally and coupled vertically at a substantially middle position of two sliding plates, and the transversal plate includes a rectangular transversal groove, and the transversal groove includes a through hole disposed at an external side of the transversal groove; a spindle member being a rectangular spindle plate and includes a spindle hole disposed separately on both sides of the spindle member, and a spindle bolt passes through one of said spindle holes and is coupled to the transversal groove; a tension spring with both ends separately including a spring hook and one of the spring hooks is latched into the through hole, and another spring hook is latched into a bolt aperture of a spindle bolt above the transversal groove; and a slid member being a driven plate with both lateral sides bent into a sliding groove for embedding an external side of the sliding plate, and the driven plate includes a plate aperture for passingType: GrantFiled: August 7, 2006Date of Patent: November 3, 2009Assignee: Jarllytec Co., Ltd.Inventors: Chia-Cheng Chen, Chung Wei Chen, Hua Feng Hsu