Patents by Inventor Chung-Wei Fang

Chung-Wei Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10982327
    Abstract: The present disclosure relates to a method of chemical vapor deposition (CVD). In some embodiments, a process gas is applied into a vacuum chamber. The process gas is guided downstream the vacuum chamber through a shower head arranged under the gas import, where the process gas is redirected to be laterally unevenly distributed under the shower head. A density of the process gas increases from a center region to a peripheral region of the vacuum chamber. The process gas is then deposited onto a first substrate to form a precursor material with an uneven thickness profile as a result of uneven distribution of the process gas. The shower head has multiple control zones each having a plurality of holes disposed through the shower head.
    Type: Grant
    Filed: September 22, 2019
    Date of Patent: April 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Wei Fang, Yi Hsun Chiu, Cho-Han Li, Yao Fong Dai
  • Patent number: 10975473
    Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: April 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Wei Fang, Yi Hsun Chiu, Cho-Han Li, Yao Fong Dai
  • Publication number: 20200017973
    Abstract: The present disclosure relates to a method of chemical vapor deposition (CVD). In some embodiments, a process gas is applied into a vacuum chamber. The process gas is guided downstream the vacuum chamber through a shower head arranged under the gas import, where the process gas is redirected to be laterally unevenly distributed under the shower head. A density of the process gas increases from a center region to a peripheral region of the vacuum chamber. The process gas is then deposited onto a first substrate to form a precursor material with an uneven thickness profile as a result of uneven distribution of the process gas. The shower head has multiple control zones each having a plurality of holes disposed through the shower head.
    Type: Application
    Filed: September 22, 2019
    Publication date: January 16, 2020
    Inventors: Chung-Wei Fang, Yi Hsun Chiu, Cho-Han Li, Yao Fong Dai
  • Publication number: 20190360103
    Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.
    Type: Application
    Filed: August 6, 2019
    Publication date: November 28, 2019
    Inventors: Chung-Wei Fang, Yi Hsun Chiu, Cho-Han Li, Yao Fong Dai
  • Patent number: 10450655
    Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through with at least two different diameters or densities. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: October 22, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Wei Fang, Yi Hsun Chiu, Cho-Han Li, Yao Fong Dai
  • Publication number: 20190127852
    Abstract: The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through with at least two different diameters or densities. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.
    Type: Application
    Filed: October 27, 2017
    Publication date: May 2, 2019
    Inventors: Chung-Wei Fang, Yi Hsun Chiu, Cho-Han Li, Yao Fong Dai
  • Patent number: 9953888
    Abstract: An electromagnetic detection device is provided. The electromagnetic detection device includes an induction coil, a converter, and a controller. The induction coil is utilized to sense an RF signal and generate a sensing RF signal by electromagnetic induction of the induction coil which is proportional to the RF signal. The RF signal is transmitted to a shower head to perform a semiconductor process on a wafer for manufacturing an IC in association with the RF signal. The converter is utilized to convert the sensing RF signal into a DC signal. The controller is utilized to determine whether the semiconductor process is normal or abnormal according to the DC signal during the semiconductor process. The semiconductor process will be terminated when the semiconductor process is determined as abnormal.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: April 24, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Wei Fang, Yao-Fong Dai, Chih-Tung Lo, Ming-Hsien Tsai, Kai-Wen Wu