Patents by Inventor Chung-Wei Lai

Chung-Wei Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140209158
    Abstract: A solar cell includes a crystalline silicon substrate, a plurality of P-type semiconductor material layers, a plurality of N-type semiconductor material layers, a plurality of first and second anode electric collection portions, at least one first electrode bus portion, a plurality of first and second cathode electric collection portions, at least one second electrode bus portion, and at least one third electrode bus portion. The first anode electric collection portions, the first electrode bus portion, the first cathode electric collection portions, the second electrode bus portion, the second anode electric collection portions, the second electrode bus portion, the second cathode electric collection portions, and the third electrode bus portion are arranged to form plural cell sub-units, such that an output voltage of the solar cell can be increased.
    Type: Application
    Filed: January 22, 2014
    Publication date: July 31, 2014
    Applicant: AU Optronics Corporation
    Inventors: Chung-Wei LAI, Shuo-Wei LIANG
  • Publication number: 20120097246
    Abstract: A solar cell includes a crystalline semiconductor substrate; a first crystalline semiconductor layer; an amorphous semiconductor layer; a first metal electrode layer and a second metal electrode layer. The crystalline semiconductor substrate has a first surface and a second surface, and the crystalline semiconductor substrate has a first doped type. The first crystalline semiconductor layer is disposed on the first surface of the crystalline semiconductor substrate, where the first crystalline semiconductor layer has a second doped type contrary to the first doped type. The amorphous semiconductor layer is disposed on the first crystalline semiconductor layer, and the amorphous semiconductor layer has the second doped type. The first metal electrode layer is disposed on the amorphous semiconductor layer. The second metal electrode layer is disposed on the second surface of the crystalline semiconductor substrate.
    Type: Application
    Filed: March 29, 2011
    Publication date: April 26, 2012
    Inventors: Chee-Wee Liu, Wei-Shuo Ho, Yen-Yu Chen, Chun-Yuan Ku, Zhen-Cheng Wu, Shuo-Wei Liang, Jen-Chieh Chen, Chung-Wei Lai, Tsung-Pao Chen