Abstract: Disclosed is an image display format conversion method, comprising: a frame recognition step of performing a frame recognition process on a comic page image to obtain a plurality of comic frame images and frame position information; a frame sequence determination step of determining a frame viewing sequence according to a selected regional layout rule; and a frame reassembly step of reassembling and converting, based on the frame viewing sequence, the plurality of comic frame images into a digital media in an animation-like format or a scrolling-comic format.

Abstract: Disclosed is an image display format conversion method, comprising: a frame recognition step of performing a frame recognition process on a comic page image to obtain a plurality of comic frame images and frame position information; a frame sequence determination step of determining a frame viewing sequence according to a selected regional layout rule; and a frame reassembly step of reassembling and converting, based on the frame viewing sequence, the plurality of comic frame images into a digital media in an animation-like format or a scrolling-comic format.

Abstract: The present invention discloses a double-gate trench-type insulated-gate bipolar transistor device. A first trench and a second trench, which are located in a P-type doped well layer, and separate from each other, are extended into a lightly-doped N-type drift layer. A heavily-doped P-type source region and a heavily-doped N-type source region, which are sequentially connected, are located between the first trench and the second trench, and are arranged at an upper part of the P-type doped well layer in a horizontal direction. The heavily-doped P-type source region is located at a periphery of the second trench, a middle part and the upper part of the P-type doped well layer are provided with an N-type doped well layer and a P-type doped base region layer, respectively. The heavily-doped P-type source region and the heavily-doped N-type source region are both located at an upper part of the P-type doped base region layer.

Abstract: The present invention discloses an apparatus for slew rate enhancement of an operational amplifier, wherein an auxiliary control device and an auxiliary output device are added to the output stage of an operational amplifier. The auxiliary control device mirrors the current of the output stage and then compares the mirrored current with a reference current to generate an auxiliary push/pull control signal, which is used to control the auxiliary output device. When the output signal is different from the input signal, the auxiliary control device turns on the auxiliary output device to provide an auxiliary output current for the output terminal. When the output signal is equal to the input signal, the auxiliary output device is turned off.

Abstract: The present invention discloses an apparatus for slew rate enhancement of an operational amplifier, wherein an auxiliary control device and an auxiliary output device are added to the output stage of an operational amplifier. The auxiliary control device mirrors the current of the output stage and then compares the mirrored current with a reference current to generate an auxiliary push/pull control signal, which is used to control the auxiliary output device. When the output signal is different from the input signal, the auxiliary control device turns on the auxiliary output device to provide an auxiliary output current for the output terminal. When the output signal is equal to the input signal, the auxiliary output device is turned off.