Abstract: One or more techniques or systems for mitigating pattern collapse are provided herein. For example, a semiconductor structure for mitigating pattern collapse is formed. In some embodiments, the semiconductor structure includes an extreme low-k (ELK) dielectric region associated with a via or a metal line. For example, a first metal line portion and a second metal line portion are associated with a first lateral location and a second lateral location, respectively. In some embodiments, the first portion is formed based on a first stage of patterning and the second portion is formed based on a second stage of patterning. In this manner, pattern collapse associated with the semiconductor structure is mitigated, for example.

Abstract: A method of backlight control for a display panel is provided. The display panel is configured to display with a variable refresh rate in a plurality of frame periods each having a fixed period and a variable period. The method includes steps of: generating a first backlight control signal in the fixed period of a frame period; determining whether a liquid crystal (LC) transition time corresponding to the frame period ends before an end time of the variable period of the frame period; generating a second backlight control signal in the variable period of the frame period when the LC transition time ends before the end time of the variable period of the frame period; and generating a compensation backlight control signal in a next frame period according to a backlight duty cycle of the frame period.

Abstract: One or more techniques or systems for mitigating pattern collapse are provided herein. For example, a semiconductor structure for mitigating pattern collapse is formed. In some embodiments, the semiconductor structure includes an extreme low-k (ELK) dielectric region associated with a via or a metal line. For example, a first metal line portion and a second metal line portion are associated with a first lateral location and a second lateral location, respectively. In some embodiments, the first portion is formed based on a first stage of patterning and the second portion is formed based on a second stage of patterning. In this manner, pattern collapse associated with the semiconductor structure is mitigated, for example.

Abstract: A method of backlight control for a display panel is provided. The display panel is configured to display with a variable refresh rate in a plurality of frame periods each having a fixed period and a variable period. The method includes steps of: generating a first backlight control signal in the fixed period of a frame period; determining whether a liquid crystal (LC) transition time corresponding to the frame period ends before an end time of the variable period of the frame period; generating a second backlight control signal in the variable period of the frame period when the LC transition time ends before the end time of the variable period of the frame period; and generating a compensation backlight control signal in a next frame period according to a backlight duty cycle of the frame period.

Abstract: The disclosure provides a display equipment, a brightness compensation device, and a brightness compensation method. The brightness compensation device includes a variable refresh rate (VRR) detection circuit and a control circuit. The VRR detection circuit and the control circuit receive a video stream from a video source device, and the video stream includes a VRR video frame. The VRR detection circuit detects a blanking period of the VRR video frame and generates a detection result. The control circuit outputs the frame data of the VRR video frame to the display device during the valid data period of the VRR video frame. The control circuit repeatedly outputs the frame data of the VRR video frame to the display device during the blanking period of the VRR video frame according to the detection result until the blanking period ends.

Abstract: The present disclosure is directed to a semiconductor structure that includes a semiconductor substrate. A first interconnect layer is disposed over the semiconductor substrate. The first interconnect layer includes a first dielectric material having a conductive body embedded therein. The conductive body includes a first sidewall, a second sidewall, and a bottom surface. A spacer element has a sidewall which contacts the first sidewall of the conductive body and which contacts the bottom surface of the conductive body. A second interconnect layer overlies the first interconnect layer and includes a second dielectric material with at least one via therein. The at least one via is filled with a conductive material which is electrically coupled to the conductive body of the first interconnect layer.

Abstract: The disclosure provides a light cabinet, including multiple light boards and multiple light-board controllers. The light boards form a first light-board array of the light cabinet. The light-board controllers are arranged one-to-one on the light boards. The light-board controllers of the light boards in a first column of the first light-board array are connected in series to form a first controller string. The output terminal of the first controller string is connected electrically to an input terminal of a second controller string in a corresponding column of a second light-board array of another light cabinet. The input terminal of the first controller string is connected electrically to a first output terminal of a video data splitter (or an output terminal of a third controller string in a corresponding column of a third light-board array of yet another light cabinet).

Abstract: A via opening including an etch stop layer (ESL) opening and methods of forming the same are provided which can be used in the back end of line (BEOL) process of IC fabrication. A metal feature is provided with a first part within a dielectric layer and with a top surface. An ESL is formed with a bottom surface of the ESL above and in contact with the dielectric layer, and a top surface of the ESL above the bottom surface of the ESL. An opening at the ESL is formed exposing the top surface of the metal feature; wherein the opening at the ESL has a bottom edge of the opening above the bottom surface of the ESL, a first sidewall of the opening at a first side of the metal feature, and a second sidewall of the opening at a second side of the metal feature.

Abstract: The disclosure provides a display equipment, a brightness compensation device, and a brightness compensation method. The brightness compensation device includes a variable refresh rate (VRR) detection circuit and a control circuit. The VRR detection circuit and the control circuit receive a video stream from a video source device, and the video stream includes a VRR video frame. The VRR detection circuit detects a blanking period of the VRR video frame and generates a detection result. The control circuit outputs the frame data of the VRR video frame to the display device during the valid data period of the VRR video frame. The control circuit repeatedly outputs the frame data of the VRR video frame to the display device during the blanking period of the VRR video frame according to the detection result until the blanking period ends.

Abstract: The disclosure provides a light cabinet, including multiple light boards and multiple light-board controllers. The light boards form a first light-board array of the light cabinet. The light-board controllers are arranged one-to-one on the light boards. The light-board controllers of the light boards in a first column of the first light-board array are connected in series to form a first controller string. The output terminal of the first controller string is connected electrically to an input terminal of a second controller string in a corresponding column of a second light-board array of another light cabinet. The input terminal of the first controller string is connected electrically to a first output terminal of a video data splitter (or an output terminal of a third controller string in a corresponding column of a third light-board array of yet another light cabinet).

Abstract: A via opening including an etch stop layer (ESL) opening and methods of forming the same are provided which can be used in the back end of line (BEOL) process of IC fabrication. A metal feature is provided with a first part within a dielectric layer and with a top surface. An ESL is formed with a bottom surface of the ESL above and in contact with the dielectric layer, and a top surface of the ESL above the bottom surface of the ESL. An opening at the ESL is formed exposing the top surface of the metal feature; wherein the opening at the ESL has a bottom edge of the opening above the bottom surface of the ESL, a first sidewall of the opening at a first side of the metal feature, and a second sidewall of the opening at a second side of the metal feature.

Abstract: One or more techniques or systems for mitigating pattern collapse are provided herein. For example, a semiconductor structure for mitigating pattern collapse is formed. In some embodiments, the semiconductor structure includes an extreme low-k (ELK) dielectric region associated with a via or a metal line. For example, a first metal line portion and a second metal line portion are associated with a first lateral location and a second lateral location, respectively. In some embodiments, the first portion is formed based on a first stage of patterning and the second portion is formed based on a second stage of patterning. In this manner, pattern collapse associated with the semiconductor structure is mitigated, for example.

Abstract: Methods are disclosed herein for forming conductive patterns having small pitches. An exemplary method includes forming a metal line in a first dielectric layer. The metal line has a first dimension along a first direction and a second dimension along a second direction that is different than the first direction. The method includes forming a patterned mask layer having an opening that exposes a portion of the metal line along an entirety of the second dimension and etching the portion of the metal line exposed by the opening of the patterned mask layer until reaching the first dielectric layer. The metal line is thus separated into a first metal feature and a second metal feature. After removing the patterned mask layer, a barrier layer is deposited over exposed surfaces of the first metal feature and the second metal feature and a second dielectric layer is deposited over the barrier layer.

Abstract: Methods of patterning a target material layer are provided herein. The method includes steps of positioning a semiconductor wafer having the target material layer thereon in an etch chamber and of providing a flow of etch gases into the etch chamber, the flow of etch gases etchant gas comprising a plurality of gases. The semiconductor wafer has a patterned hardmask feature formed from a compound on the target material layer. The method also includes steps of etching the target material layer using the patterned hardmask feature as a mask feature, wherein one of the gases chemically alters the patterned hardmask feature and at least one of the gases chemically repairs the patterned hardmask feature so that the patterned hardmask feature retains its dimensions during the etching. Associated semiconductor wafer are also provided herein.

Abstract: A circuit arrangement for controlling a backlight source and an operation method are provided. The circuit arrangement includes a generator. The generator receives a sync signal and generates a pulse width modulation signal synchronous with the sync signal to control the backlight source. The sync signal indicates a frequency of a video including a series of image frames. The sync signal includes a sync period corresponding to a frame of the video. The pulse width modulation signal includes a first waveform pattern in a first sub-period of the sync period and a second waveform pattern in a second sub-period of the sync period. Each of the first waveform pattern and the second waveform pattern includes at least one active pulse. The first waveform pattern is substantially identical to the second waveform pattern.

Abstract: One or more techniques or systems for mitigating pattern collapse are provided herein. For example, a semiconductor structure for mitigating pattern collapse is formed. In some embodiments, the semiconductor structure includes an extreme low-k (ELK) dielectric region associated with a via or a metal line. For example, a first metal line portion and a second metal line portion are associated with a first lateral location and a second lateral location, respectively. In some embodiments, the first portion is formed based on a first stage of patterning and the second portion is formed based on a second stage of patterning. In this manner, pattern collapse associated with the semiconductor structure is mitigated, for example.

Abstract: The present disclosure is directed to a semiconductor structure that includes a semiconductor substrate. A first interconnect layer is disposed over the semiconductor substrate. The first interconnect layer includes a first dielectric material having a conductive body embedded therein. The conductive body includes a first sidewall, a second sidewall, and a bottom surface. A spacer element has a sidewall which contacts the first sidewall of the conductive body and which contacts the bottom surface of the conductive body. A second interconnect layer overlies the first interconnect layer and includes a second dielectric material with at least one via therein. The at least one via is filled with a conductive material which is electrically coupled to the conductive body of the first interconnect layer.

Abstract: The present disclosure is directed to a semiconductor structure that includes a semiconductor substrate. A first interconnect layer is disposed over the semiconductor substrate. The first interconnect layer includes a first dielectric material having a conductive body embedded therein. The conductive body includes a first sidewall, a second sidewall, and a bottom surface. A spacer element has a sidewall which contacts the first sidewall of the conductive body and which contacts the bottom surface of the conductive body. A second interconnect layer overlies the first interconnect layer and includes a second dielectric material with at least one via therein. The at least one via is filled with a conductive material which is electrically coupled to the conductive body of the first interconnect layer.

Abstract: An interconnection structure includes a first dielectric layer, a bottom conductive feature present in the first dielectric layer, a second dielectric layer present on the first dielectric layer, an aluminum-containing etch stop layer present between the first dielectric layer and the second dielectric layer, an upper conductive via present at least in the second dielectric layer and electrically connected to the bottom conductive feature, and at least one aluminum-containing fragment present at least at a bottom corner of the upper conductive via.

Abstract: A synchronous backlight device and an operation method thereof are provided. The synchronous backlight device includes a pulse width modulation (PWM) control circuit and a backlight driving circuit. The PWM control circuit receives the video sync information from a video processing circuit and generates a PWM control signal. Wherein, the video sync information defines a plurality of video frame periods, the PWM control circuit at least divides each of the video frame periods into a first period and a second period, the lengths of the first periods of the video frame periods are equal to one another. The frequency of the PWM control signal in the first periods is different from the frequency of the PWM control signal in the second periods. The backlight driving circuit drives the backlight source of a display panel in accordance with the PWM control signal.