Abstract: A semiconductor device includes a plurality of gate electrodes over a substrate, and a source/drain epitaxial layer. The source/drain epitaxial layer is disposed in the substrate and between two adjacent gate electrodes, wherein a bottom surface of the source/drain epitaxial layer is buried in the substrate to a depth less than or equal to two-thirds of a spacing between the two adjacent gate electrodes.

Abstract: An electronic device includes: a first light modulation assembly, including: a first substrate; a second substrate opposite to the first substrate; a first conductive layer disposed on the first substrate; a second conductive layer disposed on the second substrate; a first insulating layer disposed on the first substrate; and a first light modulation layer disposed between the first conductive layer and the second conductive layer.

Abstract: The disclosure relates to a conductive housing for the connector and a connector comprising the conductive housing. The conductive housing comprises a plurality of side surfaces, at least one of which comprising a plurality of terminal connection portions spaced apart from one another at an edge portion of the side surface, and a gap being formed between two adjacent terminal connection portions; and a plurality of terminal pins, each of which being connected to the respective terminal connection portion. The conductive housing further comprises at least one conductive elastic piece, one of which being connected between the two adjacent terminal connection portions to at least partially cover the gap between the two adjacent terminal connection portions. By means of such arrangement, the conductive elastic piece covers most areas between the terminal pins so as to enhance electromagnetic compatibility.

Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.

Abstract: The present invention provides a combination and method for treating a Temozolomide (TMZ)-resistant cancer patient, which comprises a combination of TMZ and an isoform-selective HDAC8 inhibitor, such as BMX at an effective relative ratio to overcome TMZ resistance by enhancing TMZ-mediated cytotoxic effect by downregulating the ?-catenin/c-Myc/SOX2 signaling pathway and upregulating WT-p53 mediated MGMT inhibition.

Abstract: An electronic device comprising: a clock pin; at least one data pin; a storage device, configured to store at least one program; a processing circuit, coupled to the data pin. A device ID setting method is performed when the processing circuit executes the program stored in the storage device. The device ID setting method comprises; (a) recording connections between pins of a first electronic device and pins of the electronic device by the electronic device, wherein the first electronic device comprises at least one data pin; and (b) applying the connections between the pins of the first electronic device and the pins of the electronic device as a device ID of the first electronic device by the electronic device.

Abstract: In embodiments of a digital lithography system, physical design data prepared at a data prep server in a hierarchical data structure. A leaf node comprises a repeater nod, comprising a bitmap image and a plurality of locations at which the bitmap appears in a physical design. At an EYE server, a repeater node bitmap is adjusted based upon, for example, spatial light modulator rotational adjustment and substrate distortion. The adjusted repeater node and the plurality of locations in which the adjusted repeater appears is compared to the repeater of the data prep server and its plurality of locations. In further embodiments, a rasterizer generates a checksum of bitmap to be printed to a substrate, from the EYE server bitmap. The checksum is compared to a checksum of the EYE server bitmap.

Abstract: An epitaxial structure of a semiconductor light-emitting element includes an n-type layer, a V-pit control layer, a light-emitting layer, and a p-type layer stacked from bottom to top. The light-emitting layer includes a plurality of well layers and a plurality of barrier layers stacked alternately. The V-pit control layer includes a first superlattice layer, and a distance between a bottom surface of the V-pit control layer and a bottom surface of the first superlattice layer is less than or equal to 0.15 ?m. The bottom surface of the first superlattice layer and a bottom surface of the light-emitting layer have a distance therebetween ranging from 0.05 ?m to 0.3 ?m, and each of the first superlattice layer and the light-emitting layer is an Indium (In)-containing layer. A semiconductor light-emitting element and a light-emitting device are also provided.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure, the method includes forming a buffer layer over a substrate. An active layer is formed on the buffer layer. A top electrode is formed on the active layer. An etch process is performed on the buffer layer and the substrate to define a plurality of pillar structures. The plurality of pillar structures include a first pillar structure laterally offset from a second pillar structure. At least portions of the first and second pillar structures are spaced laterally between sidewalls of the top electrode.

Abstract: A stereo projection screen including a scattering screen having a scattering structure layer, a phase retardation layer disposed between the scattering structure layer and the polarized projector, and a metal reflection layer covering at least a part of the scattering structure layer is provided. The scattering structure layer and the phase retardation layer are arranged in a first display area and a second display area of the stereo projection screen. The metal reflection layer is arranged in at least one of the first display area and the second display area. A first image light beam having a first polarization state has a second polarization state after being transmitted to the first display area and leaving the stereo projection screen. A second image light beam having the first polarization state still has the first polarization state after being transmitted to the second display area and leaving the stereo projection screen.

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device includes forming nanowire structures stacked over a substrate and spaced apart from one another, and forming a dielectric material surrounding the nanowire structures. The dielectric material has a first nitrogen concentration. The method also includes treating the dielectric material to form a treated portion. The treated portion of the dielectric material has a second nitrogen concentration that is greater than the first nitrogen concentration. The method also includes removing the treating portion of the dielectric material, thereby remaining an untreated portion of the dielectric material as inner spacer layers; and forming the gate stack surrounding nanowire structures and between the inner spacer layers.

Abstract: Systems and methods are disclosed for accessing protected data. A computing device may have a secured stared storage accessible by two or more applications operating on the mobile device. The computing device may obtain a first token from an authorization service to verify user identity for a first application. The first token may be stored in the shared storage area, and be accessible to one or more applications sharing the storage space. In response to a user attempt to access a web service using a second application, the user identity may be verified using the first token. The authorization service may verify user credentials, and send a second token to the computing device. The second token may be a proxy ticket authorizing access and exchange of protected data between the second application and a web service. The second token may also be stored in the secure storage area.

Abstract: A thin film transistor includes an active layer located over a substrate, a first gate stack including a stack of a first gate dielectric and a first gate electrode and located on a first surface of the active layer, a pair of first contact electrodes contacting peripheral portions of the first surface of the active layer and laterally spaced from each other along a first horizontal direction by the first gate electrode, a second contact electrode contacting a second surface of the active layer that is vertically spaced from the first surface of the active layer, and a pair of second gate stacks including a respective stack of a second gate dielectric and a second gate electrode and located on a respective peripheral portion of a second surface of the active layer.

Abstract: Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.

Abstract: A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.

Abstract: Method of inhibiting a protein-protein interaction between Von Hippel-Lindau tumor-suppressor protein and hypoxia-inducible factor 1-alpha useful in the treatment of angiogenesis-related diseases and promoting wound healing.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: A voltage regulator having a multiple of main stages and at least one accelerated voltage regulator (AVR) bridge is provided. The main stages may respond to low frequency current transients and provide DC output voltage regulation. The AVR bridges are switched much faster than the main stages and respond to high frequency current transients without regulating the DC output voltage. The AVR bridge frequency response range can overlap with the main stage frequency response range, and the lowest frequency to which the AVR bridges respond may be set lower than the highest frequency to which the main stages respond.

Abstract: An analog input device including at least one mounting panel and a matrix of analog push button assemblies mounted thereon. Each analog push button assembly including an analog pressure sensor including a pressure reception arrangement having an optical sensing sub-arrangement configured to measure an amount of light varied according to a pressure sensed at the pressure reception arrangement and an output terminal for outputting an analog signal corresponding to the amount of light measured, and a plunger element configured to exert the pressure on the pressure reception arrangement. The analog input device may include a multiplexer including an input side coupled to the push button assemblies and an output side; an analog-to-digital converter coupled to the output side of the multiplexer; a processor coupled to the analog-to-digital converter and configured to output a data packet; and a communication interface configured to transmit the data packet to a host computing device.

Abstract: An impeller is provided, including a metal housing, a shaft, and a plastic member. The metal housing has a shaft mounting hole. The inner surface of the shaft mounting hole includes three or more contact points, and the contact points are closer to the shaft than other portions of the inner surface of the shaft mounting hole. The shaft passes through the shaft mounting hole and is affixed by the contact points. The metal housing divides the shaft into an upper section, a middle section, and a lower section. The plastic member passes through the shaft mounting hole and is in contact with the middle section.