Abstract: A method includes: performing a first inspection on a reticle in a reticle pod, the reticle pod including a sealed space to accommodate the reticle, and the reticle pod further comprising an inspection window, wherein the first inspection is performed through the inspection window with the sealed space keeping sealed; and moving the reticle out of the reticle pod for performing a first operation of a semiconductor device using the reticle in response to determining no defect found on the reticle.

Abstract: EUV masks and methods of fabrication thereof are described herein. An exemplary method includes receiving an EUV mask having a multilayer structure, a capping layer disposed over the multilayer structure, a patterned absorber layer disposed over the capping layer, and a patterned hard mask disposed over the patterned absorber layer. The method further includes removing the patterned hard mask by performing a first etching process to partially remove the patterned hard mask and performing a second etching process to remove a remainder of the patterned hard mask. The first etching process uses a first etchant, and the second etching process uses a second etchant. The second etchant is different than the first etchant. In some embodiments, the first etchant is a halogen-based plasma (e.g., a Cl2 plasma), and the second etchant is a halogen-and-oxygen-based plasma (e.g., a Cl2+O2 plasma).

Abstract: A method includes: inspecting a reticle in a reticle pod, the reticle pod including a sealed space to accommodate the reticle, and the reticle pod further comprising a window arranged on an upper surface of the reticle pod, wherein the inspecting is performed through the window; and moving the reticle out of the reticle pod for performing a lithography operation using the reticle.

Abstract: A method for forming a semiconductor device includes receiving a substrate having a first opening and a second opening formed thereon, wherein the first opening has a first width, and the second opening has a second width less than the first width; forming a protecting layer to cover the first opening and expose the second opening; performing a wet etching to widen the second opening with an etchant, wherein the second opening has a third width after the performing of the wet etching, and the third width of the second opening is substantially equal to the first width of the first opening; and performing a photolithography to transfer the first opening and the second opening to a target layer.

Abstract: A circuit layout patterning method includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a width of the reference pattern and a width of the beta pattern; transferring the design pattern to the shielding layer if a difference between the width of the reference patterned and the width of the beta pattern is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: The present invention provides a combination and method for treating a Temozolomide (TMZ)-resistant cancer patient, which comprises a combination of TMZ and an isoform-selective HDAC8 inhibitor, such as BMX at an effective relative ratio to overcome TMZ resistance by enhancing TMZ-mediated cytotoxic effect by downregulating the ?-catenin/c-Myc/SOX2 signaling pathway and upregulating WT-p53 mediated MGMT inhibition.

Abstract: The present disclosure provides a method of manufacturing a photomask. The method includes: forming a multilayer structure on a substrate; forming a capping layer on the multilayer structure, the capping layer including a ruthenium oxide (RuO) layer; forming a light-absorbing structure on the capping layer; forming a hard mask on the light-absorbing structure; etching the light-absorbing structure to form a recess by using the hard mask as an etch mask, wherein the recess exposes a top portion of the capping layer; and performing a treatment to convert the top portion into a ruthenium nitride (RuN) layer.

Abstract: A method includes: inspecting a reticle in a reticle pod, the reticle pod including a sealed space to accommodate the reticle, and the reticle pod further comprising a window arranged on an upper surface of the reticle pod, wherein the inspecting is performed through the window; and moving the reticle out of the reticle pod for performing a lithography operation using the reticle.

Abstract: A method of manufacturing a reticle includes: disposing the reticle in a reticle pod, the reticle pod forming a sealed space to accommodate the reticle, and the reticle pod comprising a window arranged on an upper surface of the reticle pod and configured to allow a radiation at a predetermined wavelength to pass through; and performing an inspection operation on the reticle through the window.

Abstract: Provided herein are improved processes and methods for preparing osimertinib or a salt thereof, in particular osimertinib mesylate. The improved process removes the necessity of isolating the unstable aniline intermediate of formula (III) and enables the direct coupling to form the amide product of formula (II): The present invention is suitable for a large-scale production, avoiding the isolation of unstable intermediate, thereby providing osimertinib or a mesylate salt thereof in both high yields and high purity.

Abstract: A circuit layout patterning method includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a width of the reference pattern and a width of the beta pattern; transferring the design pattern to the shielding layer if a difference between the width of the reference patterned and the width of the beta pattern is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: Provided is a composition for enhancing cognitive abilities and use thereof; wherein the composition consists essentially of royal jelly, Taiwan green propolis and soybean lecithin; and the cognitive abilities comprise memory, judgment, intuition, calculation, and reaction abilities.

Abstract: A method for manufacturing a semiconductor includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a reference roughness of a boundary of the reference pattern and a beta roughness of a boundary of the beta pattern; transferring the design pattern to the shielding layer if a difference between the reference roughness and the beta roughness is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: A method for manufacturing a semiconductor includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a reference roughness of a boundary of the reference pattern and a beta roughness of a boundary of the beta pattern; transferring the design pattern to the shielding layer if a difference between the reference roughness and the beta roughness is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.

Abstract: The present invention provides a combination and method for treating a Temozolomide (TMZ)-resistant cancer patient, which comprises a combination of TMZ and an isoform-selective HDAC8 inhibitor, such as BMX at an effective relative ratio to overcome TMZ resistance by enhancing TMZ-mediated cytotoxic effect by downregulating the ?-catenin/c-Myc/SOX2 signaling pathway and upregulating WT-p53 mediated MGMT inhibition.

Abstract: A method of manufacturing a reticle includes: disposing the reticle in a reticle pod, the reticle pod forming a sealed space to accommodate the reticle, and the reticle pod comprising a window arranged on an upper surface of the reticle pod and configured to allow a radiation at a predetermined wavelength to pass through; and performing an inspection operation on the reticle through the window.

Abstract: Provided herein are improved processes and methods for preparing osimertinib or a salt thereof, in particular osimertinib mesylate. The improved process removes the necessity of isolating the unstable aniline intermediate of formula (III) and enables the direct coupling to form the amide product of formula (II): The present invention is suitable for a large-scale production, avoiding the isolation of unstable intermediate, thereby providing osimertinib or a mesylate salt thereof in both high yields and high purity.

Abstract: The structure and methods of a reticle pod are provided. A reticle pod includes a base configured to support a reticle and a cover detachably coupled to the base. The cover includes a window that allows radiation at a wavelength between about 400 nm and about 700 nm to pass through with a transmittance of greater than 70%.

Abstract: Provided is a use of a Macaranga tanarius preparation or extract for manufacturing a composition for enhancing immunity of an insect, particularly a bee. Also provided is a method for enhancing immunity of an insect, particularly a bee. The method comprises administering an effective amount of a composition of the present invention to the insect.

Abstract: A method for manufacturing a semiconductor includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a reference roughness of a boundary of the reference pattern and a beta roughness of a boundary of the beta pattern; transferring the design pattern to the shielding layer if a difference between the reference roughness and the beta roughness is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.