Patents by Inventor Chung-Yeh Wu

Chung-Yeh Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240182456
    Abstract: The present invention relates to compounds of formula (I) as activators of glucagon-like peptide 1 (GLP1) receptor for the treatment of obesity, type 2 diabetes mellitus, insulin resistance, hyperinsulinemia, glucose intolerance, hyperglycemia, one or more diabetic complications, diabetic nephropathy, dyslipidemia, non-alcoholic fatty liver disease (NAFLD), non-alcoholic steatohepatitis (NASH), hypertension, atherosclerosis, peripheral arterial disease, stroke, cardiomyopathy, atrial fibrillation, heart failure, coronary heart disease and neuropathy. Preferred compounds are e.g. 2-((4-((S)-2-(4-chloro-2-fluorophenyl)-2-methylbenzo[d][1,3]dioxol-4-yl)piperidin-1-yl)methyl)-1-(((S)-oxetan-2-yl)methyl)-1H-imidazole derivatives and similar compounds, such as e.g. C-1, C-2, C-3, C-4 and other compounds.
    Type: Application
    Filed: April 11, 2022
    Publication date: June 6, 2024
    Inventors: Martin ALLAN, Matthew CARSON, Thomas CAYA, Lara CZABANIUK, Ming QIAN, Daniel SMITH, Troy SMITH, Liansheng SU, Chung-Yeh WU, Lihua YANG, Chun ZHANG, Ping ZHANG, Xilin ZHOU
  • Patent number: 7960786
    Abstract: A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW, wherein at least one of the pre-HVW, the HVW, and the field ring comprises at least two tunnels; an insulation region over the field ring and a portion of the HVW; a drain region in the HVW and adjacent the insulation region; a gate electrode over a portion the insulation region; and a source region on an opposite side of the gate electrode than the drain region.
    Type: Grant
    Filed: July 9, 2008
    Date of Patent: June 14, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Eric Huang, Tsung-Yi Huang, Fu-Hsin Chen, Chyi-Chyuan Huang, Chung-Yeh Wu
  • Publication number: 20100006935
    Abstract: A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW, wherein at least one of the pre-HVW, the HVW, and the field ring comprises at least two tunnels; an insulation region over the field ring and a portion of the HVW; a drain region in the HVW and adjacent the insulation region; a gate electrode over a portion the insulation region; and a source region on an opposite side of the gate electrode than the drain region.
    Type: Application
    Filed: July 9, 2008
    Publication date: January 14, 2010
    Inventors: Eric Huang, Tsung-Yi Huang, Fu-Hsin Chen, Chyi-Chyuan Huang, Chung-Yeh Wu
  • Patent number: 7508032
    Abstract: A high-voltage transistor device has a first well region with a first conductivity type in a semiconductor substrate, and a second well region with a second conductivity type in the semiconductor substrate substantially adjacent to the first well region. A field ring with the second conductivity type is formed on a portion of the first well region, and the top surface of the field ring has at least one curved recess. A field dielectric region is formed on the field ring and extends to a portion of the first well region. A gate structure is formed over a portion of the field dielectric region and extends to a portion of the second well region.
    Type: Grant
    Filed: February 20, 2007
    Date of Patent: March 24, 2009
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Puo-Yu Chiang, Tsung-Yi Huang, Fu-Hsin Chen, Ting-Pang Li, Chung-Yeh Wu
  • Publication number: 20080197410
    Abstract: A high-voltage transistor device has a first well region with a first conductivity type in a semiconductor substrate, and a second well region with a second conductivity type in the semiconductor substrate substantially adjacent to the first well region. A field ring with the second conductivity type is formed on a portion of the first well region, and the top surface of the field ring has at least one curved recess. A field dielectric region is formed on the field ring and extends to a portion of the first well region. A gate structure is formed over a portion of the field dielectric region and extends to a portion of the second well region.
    Type: Application
    Filed: February 20, 2007
    Publication date: August 21, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Puo-Yu Chiang, Tsung-Yi Huang, Fu-Hsin Chen, Ting-Pang Li, Chung-Yeh Wu