Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

Abstract: A semiconductor device includes a substrate; a memory array over the substrate, the memory array including first magnetic tunnel junctions (MTJs), where the first MTJs are in a first dielectric layer over the substrate; and a resistor circuit over the substrate, the resistor circuit including second MTJs, where the second MTJs are in the first dielectric layer.

Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.

Abstract: A multifunctional floating apparatus, which is able to float on water, includes a floating device, a handrail, a driving device, a controlling device, and a battery set. The floating device has an exterior edge and an interior edge, wherein the exterior edge is longer than the interior edge, and the floating device has an inner side at the interior edge. The handrail is connected to the inner side of the floating device, wherein the handrail has at least a holding portion for a user to hold the handrail. The driving device is provided on the floating device to drive the floating device to sail on water. The controlling device is electrically connected to the driving device to control the controlling device. The battery set is disposed to the floating device to supply the driving device with electric power.

Abstract: Method and system for migrating a virtual storage system from a source storage system having access to a source storage device to a destination storage system having access to a destination storage device is provided. A processor executable management application estimates a likelihood of success for a migration operation before the migration operation enters a cut-over duration during which client access to the source storage system and the destination storage system is restricted. The migration operation enters the cut-over duration if there is high likelihood of success for completing the migration during the cut-over duration or aborted, if there is a low likelihood of success for completing the migration during the cut-over duration.

Abstract: A multifunctional floating apparatus, which is able to float on water, includes a floating device, a handrail, a driving device, a controlling device, and a battery set. The floating device has an exterior edge and an interior edge, wherein the exterior edge is longer than the interior edge, and the floating device has an inner side at the interior edge. The handrail is connected to the inner side of the floating device, wherein the handrail has at least a holding portion for a user to hold the handrail. The driving device is provided on the floating device to drive the floating device to sail on water. The controlling device is electrically connected to the driving device to control the controlling device. The battery set is disposed to the floating device to supply the driving device with electric power.

Abstract: Method and system for migrating a virtual storage system from a source storage system having access to a source storage device to a destination storage system having access to a destination storage device is provided. A processor executable management application estimates a likelihood of success for a migration operation before the migration operation enters a cut-over duration during which client access to the source storage system and the destination storage system is restricted. The migration operation enters the cut-over duration if there is high likelihood of success for completing the migration during the cut-over duration or aborted, if there is a low likelihood of success for completing the migration during the cut-over duration.

Abstract: This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemical vapor deposition (MOCVD). The process comprises steps of, firstly, pre-cleaning a silicon wafer in a standard cleaning procedure, dipping it with HF solution and prebaking to remove its native oxide layer. Then, growing a high Ge-composition epitaxial layer, such as Si0.1Ge0.9 in a thickness of 0.8 ?m on said Si substrate by using ultra-high vacuum chemical vapor deposition under certain conditions. Thus, many dislocations are generated and located near the interface and in the low of part of Si01.Ge0.9 due to the large mismatch between this layer and Si substrate. Furthermore, a subsequent 0.8 ?m Si0.05Ge0.95 layer, and/or optionally a further 0.8 ?m Si0.02Ge0.98 layer, are grown.

Abstract: An electro magnetic controlled platinum infrared filament ignitor has a screw nut, a top pin, an electro magnetic induction coil, a magnetic permeable bolt, a metal wrapped cylinder and a platinum filament. Heat produced by current flowing in the platinum filament actuates the ignitor. The magnetic force set up by the energized coil, and spring force drives the adjustable top pin to the position of the platinum filament. The ignitor is simple in construction with endurable long life and efficient for ignition in most gas turbines, reciprocating engines and gas burners.