Abstract: A semiconductor device includes a substrate having a first conductivity type and an epitaxial layer disposed on the substrate. A first trench and a second trench are disposed in the epitaxial layer. A first body region and a second body region both having a second conductivity type are disposed in the epitaxial layer, and located on two sides of the first trench, respectively. A first source region and a second source region both having the first conductivity type are disposed on the first body region and the second body region, respectively. A first electrode is disposed in the first trench. A source contact structure includes a first portion disposed in the first trench and is electrically connected to the first source region and the second source region. A first gate is disposed in the second trench.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.

Abstract: A method for forming a semiconductor device is provided. A plurality of trenches are formed in the substrate. An isolation oxide layer is formed in the trenches and on the substrate. A shield polysilicon is deposited in the trenches and on the isolation oxide layer on the substrate. A first etching process is performed to remove a first portion of the shield polysilicon. A first removal process is performed to remove a first portion of the isolation oxide layer. A second etching process is performed to remove a second portion of the shield polysilicon. A second removal process is performed to remove a second portion of the isolation oxide layer. An inter-poly oxide layer is formed on the remaining shield polysilicon and the remaining isolation oxide layer, wherein the inter-poly oxide layer has a concave top surface.