Abstract: A system for upgrading and screening of task and its implementing method is provided, which is mainly formed by at least one mobile information device and a task database. The task database receives a creation application of a task stronghold submitted from the mobile information device. After the creation of a task stronghold is completed, each task stronghold of a task database is triggered by the mobile information device so as to perform the task. If two adjacent task strongholds in the creation of a task stronghold have their respective task trade-off ranges overlapped each other, the task database performs screening of the task strongholds so as to maintain the number of tasks and participation rate in best condition.

Abstract: A thermoelectric generating apparatus is provided which includes a first and a second thermoelectric (TE) devices. The first TE device and the second TE device have an electrical junction surface that is an interdigitated junction interface. The Seebeck coefficient of the first TE device is more than that of the second TE device. The first TE device includes a first extended portion, and the second TE device includes a second extended portion. The first extended portion is electrically connected with a first power output end with a first contact surface formed therebetween, and the area of the electrical junction surface is larger than that of the first contact surface. The second extended portion is electrically connected with a second power output end with a second contact surface formed therebetween, and the area of the electrical junction surface is larger than that of the second contact surface.

Abstract: An apparatus and a method for measuring a diode chip are provided. The diode chip is placed on a thermal conductive element. The apparatus measures an instant starting current and a first temperature, which is associated with the instant starting current, of the thermal conductive element. After the diode chip operates, the apparatus adjusts the temperature of the thermal conductive element to a second temperature, such that the current of the diode chip is adjusted to be equal to the instant starting current. The apparatus calculates a property of the diode chip according to a real power of the diode chip and a difference between the first temperature and the second temperature.