Patents by Inventor Chung-Yi Ho

Chung-Yi Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128324
    Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.
    Type: Application
    Filed: November 21, 2022
    Publication date: April 18, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Shih-Min Chou, Nien-Ting Ho, Wei-Ming Hsiao, Li-Han Chen, Szu-Yao Yu, Chung-Yi Chiu
  • Patent number: 11935804
    Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.
    Type: Grant
    Filed: April 10, 2023
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Sung Huang, Ming Hung Tseng, Yen-Liang Lin, Hao-Yi Tsai, Chi-Ming Tsai, Chung-Shi Liu, Chih-Wei Lin, Ming-Che Ho
  • Patent number: 10310390
    Abstract: An apparatus for a chuck having particle recesses is provided. In some embodiments, the chuck includes a plurality of impressions and a particle recess. The impressions of the plurality of impressions are laterally spaced and extend into the chuck from a top surface of the chuck to a base surface of the chuck. The base surface of the chuck defines bottom surfaces respectively of the impressions and is spaced between the top surface of the chuck and a bottom surface of the chuck. The particle recess extends in to the chuck from the top surface of the chuck to a location spaced between the base surface of the chuck and the bottom surface of the chuck. In particular, the particle recess is configured to underlie a workpiece alignment mark of a workpiece.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yung-Hsiang Chen, Chung-Yi Ho, David Zhou
  • Publication number: 20190049849
    Abstract: An apparatus for a chuck having particle recesses is provided. In some embodiments, the chuck includes a plurality of impressions and a particle recess. The impressions of the plurality of impressions are laterally spaced and extend into the chuck from a top surface of the chuck to a base surface of the chuck. The base surface of the chuck defines bottom surfaces respectively of the impressions and is spaced between the top surface of the chuck and a bottom surface of the chuck. The particle recess extends in to the chuck from the top surface of the chuck to a location spaced between the base surface of the chuck and the bottom surface of the chuck. In particular, the particle recess is configured to underlie a workpiece alignment mark of a workpiece.
    Type: Application
    Filed: August 28, 2017
    Publication date: February 14, 2019
    Inventors: Yung-Hsiang Chen, Chung-Yi Ho, David Zhou
  • Patent number: 5862538
    Abstract: A toilet flushing device is to be installed in a water supply tank and has a diverter valve which permits the supply of high pressure water to the rim flushing conduit of a toilet bowl when the toilet bowl is flushed. The diverter valve has a valve housing and a valve rod disposed movably in the valve housing in response to increase or decrease of the water level. A passage is formed longitudinally through the valve rod so as to direct high pressure water to the water supply tank, thereby preventing fouling formation in the passage of the valve rod.
    Type: Grant
    Filed: November 20, 1997
    Date of Patent: January 26, 1999
    Inventor: Chung-Yi Ho