Patents by Inventor Chung-Yi Luo

Chung-Yi Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory sector with trimmed reference currents and method of improving memory reading window thereof
    Patent number: 11823746
    Abstract: A memory sector with trimmed reference currents, including eight unit cells corresponding to an even word line and eight unit cells corresponding to an odd word line, and each unit cell has erased state and programmed state, wherein the logic state of unit cell corresponding to the odd word line is determined by a first reference current based on cell currents of the 8 unit cells corresponding to the even word line in programmed state and cell currents of the eight unit cells corresponding to the odd word line in erased state, and the logic state of unit cell corresponding to the even word line is determined by a second reference current based on cell currents of the eight unit cells corresponding to the even word line in erased state and cell currents of the 8 unit cells corresponding to the odd word line in programmed state.
    Type: Grant
    Filed: February 17, 2022
    Date of Patent: November 21, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Shan Ho, Ying-Ting Lin, Chung-Yi Luo, Kuo-Cheng Chou, Cheng-Hsiao Lai, Ming-Jen Chang, Yung-Tsai Hsu, Cheng-Chieh Cheng
  • MEMORY SECTOR WITH TRIMMED REFERENCE CURRENTS AND METHOD OF IMPROVING MEMORY READING WINDOW THEREOF
    Publication number: 20230223091
    Abstract: A memory sector with trimmed reference currents, including eight unit cells corresponding to an even word line and eight unit cells corresponding to an odd word line, and each unit cell has erased state and programmed state, wherein the logic state of unit cell corresponding to the odd word line is determined by a first reference current based on cell currents of the 8 unit cells corresponding to the even word line in programmed state and cell currents of the eight unit cells corresponding to the odd word line in erased state, and the logic state of unit cell corresponding to the even word line is determined by a second reference current based on cell currents of the eight unit cells corresponding to the even word line in erased state and cell currents of the 8 unit cells corresponding to the odd word line in programmed state.
    Type: Application
    Filed: February 17, 2022
    Publication date: July 13, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Shan Ho, Ying-Ting Lin, Chung-Yi Luo, Kuo-Cheng Chou, Cheng-Hsiao Lai, Ming-Jen Chang, Yung-Tsai Hsu, Cheng-Chieh Cheng