Abstract: A semiconductor package is provided. The semiconductor package includes: semiconductor dies, separated from one another, and including die I/Os at their active sides; and a redistribution structure, disposed at the active sides of the semiconductor dies and connected to the die I/Os, wherein the redistribution structure includes first and second routing layers sequentially arranged along a direction away from the die I/Os, the first routing layer includes a ground plane and first signal lines laterally surrounded by and isolated from the first ground plane, the first signal lines connect to the die I/Os and rout the die I/Os from a central region to a peripheral region of the redistribution structure, the second routing layer includes second signal lines and ground lines, and the second signal lines and the ground lines respectively extend from a location in the peripheral region to another location in the peripheral region through the central region.

Abstract: Disclosed herein are novel single-stranded anti-sense oligonucleotides (ASOs) capable of reducing the transcription of thioredoxin domain containing protein 5 (TXNDC5) mRNA. Also disclosed is use of the single-stranded ASOs as disclosed herein for manufacturing medicaments suitable for treating a disease associated with upregulation of TXNDC5. Accordingly, a pharmaceutical composition comprising the disclosed ASO molecules is provided; as well as a method of treating a subject suffering from TXNDC5-mediated disease via administering to the subject the disclosed single-stranded ASO molecules.

Abstract: The present disclosure relates to use of 10?(Z), 13?(E), 15?(E)-Heptadecatrienyl hydroquinone compound (hereafter “HQ17(3)”) represented by the following Formula (12), a pharmaceutically acceptable salt, and/or a solvate and/or a hydrate thereof, and a pharmaceutical composition comprising the above compound, in treating coronavirus infection and diseases caused by the infection, especially SARS-COV-2 infection.

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.

Abstract: A package structure and a method for forming the same are provided. The package structure includes a first package structure and a second package structure. The first package structure includes a first device formed over a first substrate. The first device includes a first conductive plug connected to a through substrate via (TSV) structure formed in the first substrate. A buffer layer surrounds the first substrate. A first bonding layer is formed over the first substrate and the buffer layer. The second package structure includes a second device formed over a second substrate. A second bonding layer is formed over the second device. A hybrid bonding structure is between the first package structure and the second package structure by bonding the first bonding layer to the second bonding layer.

Abstract: A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is removed to form a step height disposed directly on the gate structure. Subsequently, a wet etching is performed to remove the step height. After the step height is removed, the dielectric layer is etched to form a first contact hole to expose the gate structure.

Abstract: An apparatus including a pixel electrode circuit is provided. The pixel electrode circuit includes a first switch, a second switch, a first-type transistor, a first second-type transistor, and a second second-type transistor. The first switch and the second switch are respectively controlled by a first control signal and a second control signal. The first-type transistor includes a gate electrically connected to a first node, a first terminal connected to a first power supply voltage, and a second terminal connected to a third node. The first second-type transistor includes a gate electrically connected to a second node, a first terminal connected to a second power supply voltage, and a second terminal connected to the third node. The second second-type transistor includes a gate electrically connected to the second node, a first terminal being grounded, and a second terminal providing an output voltage.

Abstract: An apparatus including a pixel electrode circuit is provided. The pixel electrode circuit includes a first switch, a second switch, a first-type transistor, a first second-type transistor, and a second second-type transistor. The first switch and the second switch are respectively controlled by a first control signal and a second control signal. The first-type transistor includes a gate electrically connected to a first node, a first terminal connected to a first power supply voltage, and a second terminal connected to a third node. The first second-type transistor includes a gate electrically connected to a second node, a first terminal connected to a second power supply voltage, and a second terminal connected to the third node. The second second-type transistor includes a gate electrically connected to the second node, a first terminal being grounded, and a second terminal providing an output voltage.

Abstract: An apparatus including a pixel electrode circuit is provided. The pixel electrode circuit includes a first switch, a second switch, a first-type transistor, a first second-type transistor, and a second second-type transistor. The first switch and the second switch are respectively controlled by a first control signal and a second control signal. The first-type transistor includes a gate electrically connected to a first node, a first terminal connected to a first power supply voltage, and a second terminal connected to a third node. The first second-type transistor includes a gate electrically connected to a second node, a first terminal connected to a second power supply voltage, and a second terminal connected to the third node. The second second-type transistor includes a gate electrically connected to the second node, a first terminal being grounded, and a second terminal providing an output voltage.

Abstract: An apparatus and a system are provided. The system includes a top plate electrode, a dielectric layer, a plurality of pixel electrode circuits, and a plurality of detection circuits. A droplet is disposed between the top plate electrode and the dielectric layer. The plurality of pixel electrode circuits are arranged in a two-dimensional array. The pixel electrode circuits in each column of the two-dimensional array are electrically connected to a respective detection circuit of the plurality of detection circuits.

Abstract: An apparatus including a pixel electrode circuit is provided. The pixel electrode circuit includes a first switch, a second switch, a first-type transistor, a first second-type transistor, and a second second-type transistor. The first switch and the second switch are respectively controlled by a first control signal and a second control signal. The first-type transistor includes a gate electrically connected to a first node, a first terminal connected to a first power supply voltage, and a second terminal connected to a third node. The first second-type transistor includes a gate electrically connected to a second node, a first terminal connected to a second power supply voltage, and a second terminal connected to the third node. The second second-type transistor includes a gate electrically connected to the second node, a first terminal being grounded, and a second terminal providing an output voltage.

Abstract: An automated test mechanism includes: preparing test software capable of reading and processing a file in a general form, and making the test software support N kinds of communication interfaces, M kinds of communication protocols, and multiple commands of K kinds of instruments, wherein the general form includes an interface setting part, a communication protocol setting part, and a function list part; creating multiple general form files in the general form to support the K kinds of instruments, wherein the multiple general form files include a first file and a second file that are prepared for a first instrument and a second instrument of the multiple instruments respectively; and when performing a first test with the first instrument, choosing the first file for the first test, and when performing a second test with the second instrument, choosing the second file for the second test.

Abstract: A display apparatus is provided. The display apparatus includes a graphic processing unit, a display driver, and a display panel. The graphic processing unit is configured to provide a first image. The display driver is configured to correct an optical aberration of the first image to generate a second image. The display panel is configured to display the second image.

Abstract: A driving circuit for an electrowetting on dielectric (EWOD) pixel. The driving circuit includes a latch circuit for transmitting a source data pulse to a storage capacitor in response to an activation gate signal applied to the gate of the switch transistor and generating a latch voltage and an inversion circuit for outputting a driving voltage at either a first power voltage or a second power voltage based on the latch voltage generated by the latch circuit.

Abstract: There is provided a heating device to independently and/or effectively heat the micro objects manipulated by a micro apparatus/system, for example the droplets of fluids in an electrowetting on dielectric EWOD device of a microfluidic apparatus. The heating device may include a plurality of micro heaters arranged in an array of rows and columns, and the micro heaters of the heating device may be disposed in relative to the electrode elements of the EWOD device, respectively. Therefore, the micro heaters of the heating device may heat one of the electrode elements of the EWOD device, thereby preventing thermal effect of the micro object on the other electrode elements.

Abstract: “An image sensing device is provided in the present invention. A control circuit determines a voltage change rate of a sensing signal according to a voltage value of the sensing signal generated by a light sensing unit during an estimation period, and controls an input adjustment circuit during an exposure period according to the voltage change rate to provide an input adjustment signal to a negative input end of an operational amplifier, such that a signal value of an amplified signal falls within a pre-set range during the exposure period.

Abstract: Provided is an electronic device comprising a touch display panel and an integrated chip. The touch display panel comprises a pixel array. The integrated chip is electrically connected to the pixel array. The integrated chip comprises a fingerprint sensing circuit and a display driving circuit. The fingerprint sensing circuit and the display driving circuit are electrically connected to multiple display data lines and sensing data lines through of the same pin. The multiple display data lines are respectively electrically connected to multiple color sub-pixels of the pixel array. The sensing data lines are electrically connected to multiple fingerprint sensing pixels of the pixel array. The multiple color sub-pixels are multiple liquid crystal display pixels.

Abstract: An electronic device with fingerprint sensing function including a fingerprint sensing array, multiple fingerprint sensing signal readout lines, multiple touch driving lines, a touch driving circuit, and a read circuit is provided. The fingerprint sensing array includes multiple fingerprint sensing units arranged in array. The fingerprint sensing signal readout lines are respectively coupled to a column of fingerprint sensing units of the fingerprint sensing array. The touch driving lines are respectively interleaved with the fingerprint sensing signal readout lines. The touch driving circuit is coupled to the touch driving lines, and provides multiple touch driving signals to the touch driving lines. The read circuit is coupled to the fingerprint sensing signal readout lines. In response to the touch driving lines outputting the touch driving signals, the read circuit determines a touch position of a touch object based on multiple read signals output by the fingerprint sensing signal readout lines.

Abstract: A detection circuit includes a first detection terminal, a second detection terminal, a first switch, a second switch, a first capacitor, a second capacitor and an amplifier. The first switch is coupled to the first detection terminal. The second switch is coupled to the second detection terminal. The first capacitor is coupled between the first switch and the second switch. The amplifier includes a first input terminal coupled to the second switch, a second input terminal used to receive an operation signal, and an output terminal used to output an output signal. The second capacitor is coupled between the first input terminal and the output terminal of the amplifier. The first switch and the second switch are turned on alternatively.