Patents by Inventor Chung Ying Lu

Chung Ying Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230422411
    Abstract: A substrate structure includes a metal substrate, an insulating material, at least one first dielectric layer, and at least one first patterned circuit layer. The metal substrate has a first surface and a second surface opposite to each other and multiple through holes penetrating the metal substrate and connecting the first surface and the second surface. The insulating material fills the through holes and is aligned with the first surface and the second surface. The first dielectric layer is disposed on the first surface and the insulating material, and has multiple first openings. The first openings partially expose the metal substrate. The material of the first dielectric layer includes aluminum nitride or silicon carbide. The first patterned circuit layer is disposed on the first dielectric layer, fills the first openings, and connected to the metal substrate. The first patterned circuit layer partially exposes the first dielectric layer.
    Type: Application
    Filed: August 31, 2022
    Publication date: December 28, 2023
    Applicant: Subtron Technology Co., Ltd.
    Inventor: Chung Ying Lu
  • Publication number: 20230403826
    Abstract: A heat dissipation substrate includes heat dissipation blocks, an insulation filling structure, a first insulating layer, and a first circuit layer. Each heat dissipation block includes a first surface and a second surface opposite to the first surface. The insulation filling structure is disposed between the heat dissipation blocks to laterally connect the heat dissipation blocks. A first insulating surface of the insulation filling structure is substantially coplanar with the first surface of the heat dissipation block. A second insulating surface of the insulation filling structure is substantially coplanar with the second surface of the heat dissipation block. The first insulating layer is disposed on the first surface. The first circuit layer is disposed on the first insulating layer and penetrates the first insulating layer to be connected with the heat dissipation blocks. A thickness of the heat dissipation blocks is greater than a thickness of the first circuit layer.
    Type: Application
    Filed: July 7, 2022
    Publication date: December 14, 2023
    Applicant: Subtron Technology Co., Ltd.
    Inventors: Chung Ying Lu, Tzu-Shih Shen, Chien-Hung Wu
  • Publication number: 20220157674
    Abstract: A substrate structure includes a substrate, a first metal layer, a second metal layer, and a third metal layer. The substrate has a first surface and a second surface opposite to each other and at least one through hole. The first metal layer is disposed on the first surface of the substrate. The second metal layer is disposed on the second surface of the substrate. The third metal layer is disposed on an inner wall of the at least one through hole of the substrate and connects the first metal layer and the second metal layer. The third metal layer and a portion of the first metal layer define at least one containing cavity, and the at least one containing cavity is configured to contain solder to fix the substrate structure onto an external circuit.
    Type: Application
    Filed: June 15, 2021
    Publication date: May 19, 2022
    Applicant: Subtron Technology Co., Ltd.
    Inventor: Chung Ying Lu