Abstract: A semiconductor device package includes a supporting element, a transparent plate disposed on the supporting element, a semiconductor device disposed under the transparent plate, and a lid surrounding the transparent plate. The supporting element and the transparent plate define a channel.

Abstract: An organic light-emitting diode (OLED) device includes a substrate, a well structure on the substrate with the well structure having a recess with side walls and a floor, a lower metal layer covering the floor and side-walls of the well, an upper conductive layer on the lower metal layer covering the floor of the well and contacting the lower metal layer, the upper conductive layer having outer edges at about an intersection of the side walls and the floor, a dielectric layer formed of an oxide of the lower metal layer covering the side walls of the well without covering the upper conductive layer, a stack of OLED layers covering at least the floor of the well, the upper conductive layer providing an electrode for the stack of OLED layers, and a light extraction layer (LEL) in the well over the stack of OLED layers and the dielectric layer.

Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

Abstract: A light-emitting diode display including a substrate having a driving circuitry and a plurality of light emitting diode structures disposed on the substrate. Each light-emitting diode structure has a light emitting diode with a light emission zone having a planar portion, and a pigmentless light extraction layer of a UV-cured ink disposed over the light-emitting diode. The light extraction layer has a gradient in index of refraction along an axis normal to the planar portion, and the index of refraction of the light extraction layer decreases with distance from the planar portion.

Abstract: The present disclosure describes an apparatus for processing one or more objects. The apparatus includes a carrier configured to hold the one or more objects, a tank filled with a processing agent and configured to receive the carrier, and a spinning portion configured to contact the one or more objects and to spin the one or more objects to disturb a flow field of the processing agent.

Abstract: The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.

Abstract: Methods and structures for modulating an inner spacer profile include providing a fin having an epitaxial layer stack including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing the plurality of dummy layers to form a first gap between adjacent semiconductor channel layers of the plurality of semiconductor channel layers. Thereafter, in some examples, the method includes conformally depositing a dielectric layer to substantially fill the first gap between the adjacent semiconductor channel layers. In some cases, the method further includes etching exposed lateral surfaces of the dielectric layer to form an etched-back dielectric layer that defines substantially V-shaped recesses. In some embodiments, the method further includes forming a substantially V-shaped inner spacer within the substantially V-shaped recesses.

Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure over and in a substrate. The method includes forming a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack over the substrate. Each of the first gate stack or the second gate stack is wider than each of the third gate stack or the fourth gate stack. The method includes forming a first contact structure and a second contact structure over the first source/drain structure and the second source/drain structure respectively. A first average width of the first contact structure is substantially equal to a second average width of the second contact structure.

Abstract: An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.

Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending bet ween the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.

Abstract: The present disclosure provides a routing structure. The routing structure includes a substrate having a boundary and a first conductive trace configured to be coupled to a first conductive pad disposed within the boundary of the substrate. The first conductive trace is inclined with respect to the boundary of the substrate.

Abstract: A supported metallocene catalyst includes a carrier and a metallocene component. The carrier includes an inorganic oxide particle and an alkyl aluminoxane material. The inorganic oxide particle includes at least one inorganic oxide compound selected from the group consisting of an oxide of Group 3A and an oxide of Group 4A. The alkyl aluminoxane material includes an alkyl aluminoxane compound and an alkyl aluminum compound that is present in amount ranging from greater than 0.01 wt % to less than 14 wt % base on 100 wt % of the alkyl aluminoxane material. The metallocene component is supported on the carrier, and includes one of a metallocene compound containing a metal from Group 3B, a metallocene compound containing a metal from Group 4B, and a combination thereof. A method for preparing the supported metallocene catalyst and a method for preparing polyolefin using the supported metallocene catalyst are also disclosed.

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

Abstract: A circuit board includes a conductive metal layer, at least one insulating layer, at least one thermally conductive insulating layer and a heat dissipation element. The conductive metal layer is mainly used to transmit electronic signals. The insulating layer is connected to the conductive metal layer. The thermally conductive insulating layer is sandwiched between the conductive metal layer and the insulating layer, and thermally contacts the conductive metal layer, and is used for thermally conducting the heat of the conductive metal layer. The heat dissipation element is in thermal contact with the thermally conductive insulating layer, and is used to conduct the heat of the thermally conductive insulating layer to the outside through a heat dissipation channel.

Abstract: Provided is a thermoplastic polyether ester elastomer composition having a first chain represented by the following Formula (I) and a second chain represented by the following Formula (II), which are connected to each other: Wherein, the melting point of the thermoplastic polyether ester elastomer composition ranges from 80° C. to 160° C., and the enthalpy of fusion of the thermoplastic polyether ester elastomer composition is greater than 6 J/g. Production of the thermoplastic polyether ester elastomer composition has low energy consumption and facilitates smooth cutting strands into pellets, which is beneficial to mass production of the thermoplastic polyether ester elastomer composition.

Abstract: Disclosed are an interposer substrate, a package structure and a manufacturing method of a package structure. In one embodiment, the interposer substrate includes a substrate, a bridge device in the substrate, a memory in the substrate and beside the bridge device and a through substrate via in the substrate and beside the bridge device and the memory.

Abstract: A video device, a wireless audio device and a method for performing audio and video (AV) synchronization between the video device and the wireless audio device are provided. The method includes: utilizing a controller of the video device to determine a video delay of the video device; utilizing the controller to determine an audio delay of the video device; utilizing the controller to receive information of a communications quality of the wireless audio device from the wireless audio device, to determine a wireless communications delay between the video device and the wireless audio device according to the communications quality; utilizing the controller to generate a time map information according to the video delay, the audio delay and the wireless communications delay; and transmitting the time map information from the video device to the wireless audio device for AV synchronization between the video device and the wireless audio device.

Abstract: A portable electric fan is provided and includes a shell, a fan module, and a plurality of combined seat groups. The shell has a first surface, a second surface opposite to the first surface, and a surrounding side surface that is connected to the first surface and the second surface. The shell has a hollow portion. The fan module is mounted in the hollow portion. The combined seat groups are mounted on the surrounding side surface, and each of the combined seat groups includes two bases and a bracket detachably mounted to the two bases. Each of the two bases has a first through hole and a second through hole, and an extending length direction of the first through hole and an extending direction of the second through hole are staggered relative to the surrounding side surface.