Abstract: A multi-gate High Electron Mobility Transistor (HEMT) can include a Two-Dimension Electron Gas (2DEG) channel between the drain and the source. A first gate can be disposed proximate the 2DEG channel between the drain and source. The first gate can be configured to deplete majority carriers in the 2DEG channel proximate the first gate when a potential applied between the first gate and the source is less than a threshold voltage associated with the first gate. A second gate can be disposed proximate the 2DEC channel, between the drain and the first gate. The second gate can be electrically coupled to the drain. The second gate can be configured to deplete majority carriers in the 2DEG channel proximate the second gate when a potential applied between the second gate and the 2DEG channel between the second gate and the first gate is less than a threshold voltage associated with the second gate.

Abstract: A protection circuit can include a first clamping sub-circuit, a first switching sub-circuit and a first resistive sub-circuit coupled in series between a first and second node. The protection circuit can also include a second clamping sub-circuit, a second switching sub-circuit and a second resistive sub-circuit coupled in series between the second and first nodes. The first and second clamping sub-circuits and the first and second resistive sub-circuits can be configured to bias a switching shunt sub-circuit. The switching shunt sub-circuit can be configured to short the first and second nodes together in response to a bias potential from the first and second clamping sub-circuits and the first and second resistive sub-circuits indicative of an over-voltage, Electrostatic Discharge (ESD) or similar event. The first and second switching sub-circuits can be configured to prevent the occurrence of a current path through the first and second resistive sub-circuits at the same time.

Abstract: A multi-gate High Electron Mobility Transistor (HEMT) can include a Two-Dimension Electron Gas (2DEG) channel between the drain and the source. A first gate can be disposed proximate the 2DEG channel between the drain and source. The first gate can be configured to deplete majority carriers in the 2DEG channel proximate the first gate when a potential applied between the first gate and the source is less than a threshold voltage associated with the first gate. A second gate can be disposed proximate the 2DEC channel, between the drain and the first gate. The second gate can be electrically coupled to the drain. The second gate can be configured to deplete majority carriers in the 2DEG channel proximate the second gate when a potential applied between the second gate and the 2DEG channel between the second gate and the first gate is less than a threshold voltage associated with the second gate.

Abstract: A protection circuit can include a first clamping sub-circuit, a first switching sub-circuit and a first resistive sub-circuit coupled in series between a first and second node. The protection circuit can also include a second clamping sub-circuit, a second switching sub-circuit and a second resistive sub-circuit coupled in series between the second and first nodes. The first and second clamping sub-circuits and the first and second resistive sub-circuits can be configured to bias a switching shunt sub-circuit. The switching shunt sub-circuit can be configured to short the first and second nodes together in response to a bias potential from the first and second clamping sub-circuits and the first and second resistive sub-circuits indicative of an over-voltage, Electrostatic Discharge (ESO) or similar event. The first and second switching sub-circuits can be configured to prevent the occurrence of a current path through the first and second resistive sub-circuits at the same time.