Abstract: A substrate processing apparatus including an electrostatic chuck on which a substrate is mountable; a ring surrounding the electrostatic chuck, the ring including a first coupling groove; and a first floating electrode in the first coupling groove of the ring, the first floating electrode having a ring shape, wherein a top surface of the first floating electrode is exposed at the ring, and the first floating electrode has a tapered shape including an inclined surface that is inclined in a downward direction toward the electrostatic chuck.

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

Abstract: A substrate processing apparatus including an electrostatic chuck on which a substrate is mountable; a ring surrounding the electrostatic chuck, the ring including a first coupling groove; and a first floating electrode in the first coupling groove of the ring, the first floating electrode having a ring shape, wherein a top surface of the first floating electrode is exposed at the ring, and the first floating electrode has a tapered shape including an inclined surface that is inclined in a downward direction toward the electrostatic chuck.

Abstract: A plasma system includes a source electrode, an RF source power generation unit, an RF source power output unit, and a source power output managing unit. The source power output managing unit determines an amplitude and a duty cycle of a pulse RF source power based on information on an amplitude of a continuous wave RF source power.

Abstract: Disclosed herein is a decay heat removal system, including: a decay heat exchanger that absorbs decay heat generated by a nuclear reactor; a heat pipe heat exchanger that receives the decay heat from the decay heat exchanger through a sodium loop for heat removal and then discharges the decay heat to the outside; and a sodium-air heat exchanger that is connected to the heat pipe heat exchanger through the sodium loop and discharges the decay heat transferred thereto through the sodium loop to the outside. According to the decay heat removal system, a heat removal capability can be realized by the heat pipe heat exchanger at such a high temperature at which the safety of a nuclear reactor is under threat, and a cooling effect can be obtained through the sodium-air heat exchanger at a temperature lower than that temperature.

Abstract: Disclosed herein is a decay heat removal system, including: a decay heat exchanger that absorbs decay heat generated by a nuclear reactor; a heat pipe heat exchanger that receives the decay heat from the decay heat exchanger through a sodium loop for heat removal and then discharges the decay heat to the outside; and a sodium-air heat exchanger that is connected to the heat pipe heat exchanger through the sodium loop and discharges the decay heat transferred thereto through the sodium loop to the outside. According to the decay heat removal system, a heat removal capability can be realized by the heat pipe heat exchanger at such a high temperature at which the safety of a nuclear reactor is under threat, and a cooling effect can be obtained through the sodium-air heat exchanger at a temperature lower than that temperature.