Patents by Inventor Chung-Sam Jun
Chung-Sam Jun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230101968Abstract: A semiconductor device measuring device includes: a light generator which generates light; a polarizer which polarizes the light; a wafer stage including a first load port on which an undoped reference wafer is loaded, and a second load port on which a doped sample wafer is loaded, the wafer stage being movable to first and second positions at which the polarized light is incident on the reference wafer and the sample wafer, respectively; a spectroscope which collects first and second Raman spectral information of light reflected from the reference and sample wafers, respectively; a photodetector which detects first and second Raman scattering signals based on the first and second Raman spectral information, respectively; a spectrum corrector which corrects the second Raman scattering signal using the first Raman scattering signal; and a controller which calculates a concentration of the dopant of the sample wafer using the corrected scattering signal.Type: ApplicationFiled: May 27, 2022Publication date: March 30, 2023Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Woo RYOO, Da Hee YOON, Jung Hoon BYUN, Dong-Ryul LEE, Woo Yun LEE, Dong Chul IHM, Chung Sam JUN
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Patent number: 11043433Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.Type: GrantFiled: February 27, 2020Date of Patent: June 22, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-yoon Ryu, Chung-sam Jun, Yu-sin Yang, Yun-jung Jee, Gil-woo Song
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Patent number: 10969428Abstract: Provided is a method of inspecting a pattern defect. The method includes: applying a voltage to an object to be inspected and measuring an inspection signal generated in a pattern of the object to be inspected due to the voltage applied to the object to be inspected over time; generating an intensity image showing a relationship between an intensity of the inspection signal measured in the pattern and a time by processing the inspection signal; and detecting a pattern defect position by comparing the intensity image with a comparative intensity image.Type: GrantFiled: October 3, 2016Date of Patent: April 6, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-Hoon Sohn, Chung-Sam Jun, Yu-Sin Yang
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Publication number: 20210026152Abstract: Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the reflectance and dispersion are variables which are changed sensitively to a change in a repetitive pattern of the multilayer structure, by measuring values thereof, a structural change of the sample between before and after a process is inspected with high accuracy.Type: ApplicationFiled: September 29, 2020Publication date: January 28, 2021Applicants: Samsung Electronics Co., Ltd., Korea Advanced Institute Of Science And TechnologyInventors: Sung-yoon Ryu, Yu-sin Yang, Chung-sam Jun, Hyun-su Kwak, Jung-won Kim
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Publication number: 20200203232Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.Type: ApplicationFiled: February 27, 2020Publication date: June 25, 2020Applicant: Samsung Electronics Co,, Ltd.Inventors: Sung-yoon RYU, Chung-sam Jun, Yu-sin Yang, Yun-jung Jee, Gil-woo Song
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Patent number: 10593032Abstract: In a defect inspection method, first and second inspection conditions having a first sensitivity of detection signal and having a second sensitivity of a detection signal for a defect of interest (DOI), respectively, are determined. The first and second sensitivities are different. First and second images of the same detection region on a substrate surface under the first and second inspection conditions respectively, are obtained. The first and second images are matched to detect a defect in the detection region.Type: GrantFiled: January 27, 2017Date of Patent: March 17, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Yoon Ryu, Joon-Seo Song, Yu-Sin Yang, Chung-Sam Jun, Yun-Jung Jee
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Patent number: 10585115Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.Type: GrantFiled: September 13, 2018Date of Patent: March 10, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Duck Mahn Oh, Sung Yoon Ryu, Young Hoon Sohn, Chung Sam Jun, Yun Jung Jee
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Patent number: 10527556Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.Type: GrantFiled: October 27, 2017Date of Patent: January 7, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Ho Rim, Jung-Soo Kim, Young-Hoon Sohn, Yu-Sin Yang, Chung-Sam Jun, Yun-Jung Jee
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Patent number: 10373796Abstract: A method of inspecting a wafer may include: loading of a wafer onto a stage, the wafer having a plurality of dies thereon; positioning of the wafer such that a plurality of electron beam columns on the wafer respectively face a partial region of each of the plurality of dies on the wafer; scanning the respective partial regions of each of the plurality of dies by using the electron beam columns; and combining a plurality of partial images that are obtained by scanning the partial regions to provide a die image.Type: GrantFiled: March 29, 2016Date of Patent: August 6, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Souk Kim, Chung-sam Jun, Woo-seok Ko, Sang-kil Lee, Kwang-il Shin, Yu-sin Yang, Min-chul Yoon
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Publication number: 20190214316Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.Type: ApplicationFiled: March 15, 2019Publication date: July 11, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Sung-yoon RYU, Chung-sam JUN, Yu-sin YANG, Yun-jung JEE, Gil-woo SONG
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Publication number: 20190170788Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.Type: ApplicationFiled: September 13, 2018Publication date: June 6, 2019Inventors: Duck Mahn Oh, Sung Yoon Ryu, Young Hoon Sohn, Chung Sam Jun, Yun Jung Jee
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Publication number: 20190137776Abstract: Provided are a multilayer structure inspection apparatus and method of inspecting a multilayer structure in a sample without damaging the sample, the multilayer structure inspection apparatus being configured to measure both of reflectance and dispersion without damaging the sample, wherein the reflectance and dispersion are variables which are changed sensitively to a change in a repetitive pattern of the multilayer structure, by measuring values thereof, a structural change of the sample between before and after a process is inspected with high accuracy.Type: ApplicationFiled: September 19, 2018Publication date: May 9, 2019Inventors: Sung-yoon Ryu, Yu-sin Yang, Chung-sam Jun, Hyun-su Kwak, Jung-won Kim
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Patent number: 10281410Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.Type: GrantFiled: January 10, 2018Date of Patent: May 7, 2019Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min Ho Rim, Yu Sin Yang, Chung Sam Jun, Yun Jung Jee
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Publication number: 20190114755Abstract: According to one embodiment, a semiconductor chip inspection device includes a conveyor, an image capture device, and an analysis system. The conveyor provides a transfer path on which a semiconductor chip heated during a manufacturing process is moved. The image capture device is disposed above the transfer path and is configured to generate a thermographic image by imaging the semiconductor chip including capturing a plurality of thermographic images at different focal points in a thickness direction of the semiconductor chip. The analysis system is configured to compare the plurality of thermographic images with a plurality of standard images provided in advance, and to detect a region in which a temperature differential between a thermographic image and a respective standard image exceeds a reference value.Type: ApplicationFiled: March 27, 2018Publication date: April 18, 2019Inventors: Seong Sil LEE, Sung Yoon RYU, Young Hoon SOHN, Chung Sam JUN
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Patent number: 10249544Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.Type: GrantFiled: July 20, 2017Date of Patent: April 2, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-yoon Ryu, Chung-sam Jun, Yu-sin Yang, Yun-jung Jee, Gil-woo Song
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Patent number: 10222414Abstract: An apparatus for exchanging a probe includes a stacker configured to receive a probe and to align the probe, a probe connector connected to the probe, and a laser alignment unit including a light emitter and a light receiver. The light emitter is configured to emit a laser beam to the probe, and the light receiver is configured to detect the laser beam reflected by the probe. The laser alignment unit is configured to detect when the probe is properly aligned on the probe connector using the light receiver, and the laser alignment unit is configured to stop moving the stacker when it is detected that the probe is properly aligned.Type: GrantFiled: October 6, 2016Date of Patent: March 5, 2019Assignees: SAMSUNG ELECTRONICS CO., LTD., NANOFOCUS INC.Inventors: Jae Wan Hong, Jeong Hoi Kim, Yu Sin Yang, Sang Kil Lee, Chung Sam Jun
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Publication number: 20180356349Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.Type: ApplicationFiled: January 10, 2018Publication date: December 13, 2018Inventors: Min Ho Rim, YU SIN YANG, CHUNG SAM JUN, YUN JUNG JEE
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Publication number: 20180340894Abstract: An optical measuring method includes generating a Bessel beam, filtering the Bessel beam to generate a focused Bessel beam, vertically irradiating the focused Bessel beam onto a substrate in which an opening is formed, and detecting light reflected from the substrate to obtain an image of a bottom surface of the opening.Type: ApplicationFiled: October 27, 2017Publication date: November 29, 2018Inventors: Min-Ho RIM, Jung-Soo KIM, Young-Hoon SOHN, Yu-Sin YANG, Chung-Sam JUN, Yun-Jung JEE
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Patent number: 10068324Abstract: A 3D profiling system of a semiconductor chip is provided and includes a storage unit that receives scanning electron microscope (SEM) images of a plurality of semiconductor devices having respective data with respect to a plurality of different components and gray levels of each SEM image. An extraction unit that performs principal component analysis (PCA) on the gray level of the SEM image and separates principal components from among the plurality of different components is also part of the system. Additionally, a calculation unit receives provision of actually measured values of the plurality of semiconductor devices, and applies a multiple linear regression to the principal components based on the measured values to complete a 3D profile of the semiconductor chip.Type: GrantFiled: October 12, 2016Date of Patent: September 4, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung Soo Kim, Jin Kwan Kim, Chung Sam Jun, Yu sin Yang, Soo Seok Lee
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Publication number: 20180106731Abstract: A semiconductor device inspecting apparatus includes a light source for emitting light to a semiconductor pattern. The semiconductor pattern includes a structure that reflects the light from the light source. The semiconductor device inspecting apparatus further includes an objective optical system disposed in a path of the reflected light from the semiconductor pattern, and a first noise filter disposed in a path of the reflected light having passed through the objective optical system, the first noise filter including at least one bar pattern that filters a diffraction noise of the light. The semiconductor device inspecting apparatus additionally includes a second noise filter disposed in a path of the filtered light from the first noise filter, the second noise filter including an outer frame surrounding a central portion. The semiconductor device inspecting apparatus further includes a first photodetector detecting the light having passed through the second noise filter.Type: ApplicationFiled: August 9, 2017Publication date: April 19, 2018Inventors: MIN HO RIM, MYUNG SU OH, JUNG SOO KIM, YU SIN YANG, CHUNG SAM JUN, YUN JUNG JEE