Abstract: The method includes receiving a semiconductor device having a first surface and a second surface. The first surface is a top surface including a conductive material exposed thereon; and the second surface is an embedded surface including the conductive material and a dielectric material. The method also includes selecting a first polishing slurry to achieve a first polishing rate of the conductive material in the first polishing slurry and a second polishing rate of the dielectric material in the first polishing slurry. The method further includes selecting a second polishing slurry to achieve a third polishing rate of the conductive material in the second polishing slurry and a fourth polishing rate of the dielectric material in the second polishing slurry. The method additionally includes polishing the first surface with the first polishing slurry until the second surface is exposed; and polishing the second surface with the second polishing slurry.

Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

Abstract: A semiconductor device includes a first type of light sensing units, where each instance of the first type of light sensing units is operable to receive a first amount of radiation; and a second type of light sensing units, where each instance of the second type of light sensing units is operable to receive a second amount of radiation, and the second type of light sensing units is arranged in an array with the first type of light sensing units to form a pixel sensor. The first amount of radiation is smaller than the second amount of radiation, and at least a first instance of the first type of light sensing units is adjacent to a second instance first type of light sensing unit.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.

Abstract: A light source module includes a light guide plate, a first light source, multiple first optical microstructures, and multiple second optical microstructures. The first light source is disposed on a side of a first light incident surface of the light guide plate. The first and second optical microstructures are disposed on a bottom surface of the light guide plate, and respectively located in a first and a second zone. A first light receiving surface of each first optical microstructure facing the first light source has a first edge connecting the bottom surface, and a perpendicular bisector of the first edge passes through the first light source. The first zone does not overlap the second zone. A second light receiving surface of each second optical microstructure has a second edge connecting the bottom surface, and a perpendicular bisector of the second edge does not pass through the first light source.

Abstract: Methods for reading a memory are provided. In response to a first address signal, a first signal is obtained according to first data of the memory and a second signal is obtained according to second data of the memory by a decoding circuit. Binary representation of the first signal is complementary to that of the second signal. A first sensing signal is provided according to a reference signal and the first signal and a second sensing signal is provided according to the reference signal and the second signal by a sensing circuit. An output corresponding to the first sensing signal or the second sensing signal is output in response to a control signal, by an output buffer.

Abstract: The present disclosure describes a semiconductor device having a dielectric structure between a source/drain (S/D) structure and a contact structure. The semiconductor device includes a S/D structure on a substrate, a dielectric structure on a top surface of the S/D structure, and a S/D contact structure on the S/D structure and the dielectric structure. A portion of the S/D contact structure is in contact with a top surface of the dielectric structure.

Abstract: A display device and a backlight control method of the display device are provided. When a duration of an image occlusion period is shorter than a preset duration, a backlight driving circuit is controlled to respectively provide a first pulse current and a second pulse current in a first light emitting period and a second light emitting period in each frame period, so as to drive a backlight unit to provide a first backlight and a second backlight. Here, the first pulse current is greater than the second pulse current.

Abstract: A light source module includes a light source and a reflective element. The light source has a light emitting surface. The reflective element is disposed on a transmission path of an illumination light beam emitted from the light source. The illumination light beam reflected by the reflective element is irradiated on a target plane. The reflective element includes a first reflective surface and a second reflective surface. The first reflective surface is disposed towards the light emitting surface of the light source, and is a plane. The second reflective surface bendably extends from the first reflective surface.

Abstract: A self-timed readout driver for a leakage-based physical unclonable function (L-PUF) device, a L-PUF array using the same, and applications thereof are provided. The self-timed readout driver includes a precharge transistor, an inverter and a leaky device. The precharge transistor has a control end, a first end and a second end. The inverter is electrically connected to the second end of the precharge transistor. The leaky device having a control end electrically connected to ground, a first end electrically connected to the second end of the precharge transistor, and a second end electrically connected to ground. The control end of the precharge transistor is configured to receive an input signal. The inverter is configured to generate a sense enable (SE) signal. The input signal and the SE signal may be used as two input signals for the L-PUF device.

Abstract: A leakage-based physical unclonable function (L-PUF) device, a L-PUF array and applications thereof are provided. The L-PUF device includes a precharge circuit, two leaky devices and a sense amplifier. The two leaky devices are electrically connected to the precharge circuit respectively. Each leaky device includes a transistor having a control end electrically connected to ground, a first end electrically connected to the precharge circuit and a second end electrically connected to ground. The sense amplifier is electrically connected to the first end of each of the two leaky devices, and may generate a first output signal and a second output signal. The sense amplifier may switch between a first state and a second state based on a voltage difference between the first leaky device and the second leaky device, which is determined by a leakage current of the first leaky device and a leakage current of the second leaky device.

Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

Abstract: A wafer stacking process is provided in the present invention, including steps of forming a silicon oxide layer on a sacrificial carrier, bonding the silicon oxide layer with a dielectric layer on a front side of a silicon substrate, performing a thinning process on the back side of the silicon substrate to expose TSVs therewithin, bonding the back side of the silicon substrate with another silicon substrate, repeating the thinning process and the process of bonding another silicon substrate above so as to form a wafer stacking structure, and performing a removing process to completely remove the sacrificial carrier.

Abstract: An electronic device includes an input unit, a storage unit and a processing unit. The input unit receives an input signal corresponding to a Uniform Resource Identifier of a file resource. The storage unit stores settings of a default application and a plurality of applications for executing the file resource. The processing unit executes the file resource according to the input signal and the default application. After executing the file resource by the default application, the processing unit clears the setting of the default application and displays application shortcuts corresponding to the applications in a window when a disabling signal corresponding to the default application is received within a first predetermined time and the input signal corresponding to the Uniform Resource Identifier is received within a second predetermined time. The processing unit further re-executes the file resource according to the input signal.

Abstract: A transporting device for transporting substrate of liquid crystal display and using method thereof are provided. The transporting device comprises a fixing arm, at least two forks mounted on the fixing arm, laser emitting devices respectively mounted on the forks that are used to carry two ends of the substrate, laser sensors mounted on the fixing arm and corresponding to the laser emitting devices, a processor mounted on the fixing arm and connected to the laser sensors, and air damping devices mounted below the forks that are used to carry two ends of the substrate. The droop amount and the vibration of the fork can be measured when the transporting device is carrying a substrate, and it can be determined whether the droop amount and the vibration are abnormal. If they are abnormal, the laser emitting device will be started up to alleviate the vibration of the fork.

Abstract: The present invention provides a chip-on-film (COF) tape and a corresponding COF bonding method. The COF tape comprises a base tape, a plurality of first COFs and second COFs, the first and second COFs are arranged on the base tape in an alternating manner, and are correspondingly punched onto a moving platform by a punching mechanism, and are respectively bonded onto two side edges of a liquid crystal panel. The present invention can simultaneously process the bonding operations of the two types of COF by using only one COF tape and one set of equipment, thus lowering the cost and increasing the productivity.

Abstract: A stacking machine is provided, which comprises a body and a translational mechanism for driving the body to make a translational motion. The synchronous belt used in the translational mechanism can effectively resolve the problem of slipping caused by wheel rolling, and thus enables the movement of the stacking machine to be more accurate, with the highest speed of the movement also increased significantly. Besides that, the synchronous belt mechanism is more accurate in positioning, which reduces the number of times of repeated adjustments and maintenance caused by bigger positioning errors.

Abstract: The present invention provides a chip-on-film (COF) tape and a corresponding COF bonding method. The COF tape comprises a base tape, a plurality of first COFs and second COFs, the first and second COFs are arranged on the base tape in an alternating manner, and are correspondingly punched onto a moving platform by a punching mechanism, and are respectively bonded onto two side edges of a liquid crystal panel. The present invention can simultaneously process the bonding operations of the two types of COF by using only one COF tape and one set of equipment, thus lowering the cost and increasing the productivity.

Abstract: A cartridge for carrying glass substrate is provided, and the cartridge comprises a pair of side beams each is provided with at least two pillars along a first direction. Each of the pillars is configured with a plurality of fixtures detachably juxtaposed vertically. A plurality of supporting units is arranged between the fixtures of the side beams so as to define a plurality of supporting surfaces vertically. And a plurality of free locking units detachably are secured to the fixtures on the common surface so as to allow the moving of the fixtures on the common surface as a whole. With the provision of the cartridge of the present invention, the damaged glass substrate can be conveniently and effectively removed without tempering other glass substrates which are intact and undamaged.