Abstract: Disclosed is a method for evaluating thicknesses of cobalt-rich crusts on seamounts, which comprises following steps: dividing a study area of cobalt-rich crusts into geological grid units, assigning crust thickness values to geological grid units; obtaining the crust thicknesses of the geological sampling stations in a preset influence range in the adjacent areas based on geological sampling station information; estimating the crust thicknesses in a certain distance range of the stations by a “distance-slope” spatial interpolation method, and through a spatial similarity of a crusts spatial distribution caused by a relationship between the distance and the slope, assigning values to grid units outside adjacent areas and within an influence range of the spatial similarity relationship; assigning values to the geological grid units that failed to obtain crust thickness value through an expected assignment method, and obtaining the crust thicknesses of the study areas.

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Abstract: A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Abstract: The present invention relates to novel poly(A) polymerases and their use in the treatment of diseases, disorders and conditions. More specifically, the poly(A) polymerases of the present invention include polymerases which are directly modulated by components of the phosphoinositide signaling pathway. Such components may include phosphatidylinositol phosphate kinases and phosphoinositide second messengers.

Abstract: The present invention relates to novel poly(A) polymerases and their use in the treatment of diseases, disorders and conditions. More specifically, the poly(A) polymerases of the present invention include polymerases which are directly modulated by components of the phosphoinositide signaling pathway. Such components may include phosphatidylinositol phosphate kinases and phosphoinositide second messengers.