Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A display device is disclosed. Plural sub-pixels of a display panel are connected to two adjacent gate lines. Each data line is connected to two adjacent sub-pixels of same pixel. In first or second pixel sets, the first and the fourth gate lines are connected to sub-pixels in same column. The second and the third gate lines are connected to sub-pixels in same column. The sub-pixels connected to the fourth gate line of the first pixel set and the first gate line of the second pixel set are located in different columns. In one frame time, the data signal drives same pixel through the nth and (n+1)th data lines using opposite polarities and the data signal drives two adjacent sub-pixels of same pixel set in column direction through the nth and (n+1)th data lines using the same polarities.

Abstract: A display device is disclosed. Plural sub-pixels of a display panel are connected to two adjacent gate lines. Each data line is connected to two adjacent sub-pixels of same pixel. In first or second pixel sets, the first and the fourth gate lines are connected to sub-pixels in same column. The second and the third gate lines are connected to sub-pixels in same column. The sub-pixels connected to the fourth gate line of the first pixel set and the first gate line of the second pixel set are located in different columns. In one frame time, the data signal drives same pixel through the nth and (n+1)th data lines using opposite polarities and the data signal drives two adjacent sub-pixels of same pixel set in column direction through the nth and (n+1)th data lines using the same polarities.

Abstract: A cellular microarray is disclosed, which has a substrate, multiple first conductive lines, multiple second conductive lines, and multiple PIREs arranged on the surface of the substrate in an array. Each PIRE includes multiple first ring-shaped electrodes, and multiple second ring-shaped electrodes. The first ring-shaped electrodes, and the second ring-shaped electrodes are located on the surface of the substrate alternately in each PIRE. Moreover, the outermost ring-shaped electrodes of any two adjacent feather-shaped electrodes are different. The disclosed cellular microarray can adhere the cells rapidly and uniformly, increase the output of manufacturing, and reduce the cost for manufacturing and application.

Abstract: A phosphorescent OLED uses a phosphorescent dopant in the emissive layer, the dopant includes a metal complex containing a plurality of moieties linking to a transition metal ion. One or more of the moieties contain a ligand with a C—SP3 carbon center. The transition metal ion can be an iridium ion. The C—SP3 carbon is linked to a chalcogen atom in an ion form, a nitrogen-containing heterocylic ring and two functional groups, wherein each of the functional groups is selected from aryl, alkyl and heteroaryl. The tetrahedral structure of this carbon center hinders close packing and intermolecular interactions and, therefore, renders the transport of holes in the light-emitting device more efficient. With such chemical structure and property, the self-quenching characteristics of the dopant in high doping concentration can be effectively reduced.

Abstract: An organic light-emitting device is provided, which comprises an anode, a cathode and a light-emitting layer between them. An organic light-emitting material having the structure of Formulas I or II is doped in the light-emitting layer. In the Formulas I and II, R1˜R9 are H, F, CF3, NO2, an alkyl group of 1 to 6 carbon atoms, an aryl group or any combinations thereof; and M is a transition metal atom.

Abstract: An integrated electrophoresis device includes a passage, a receiving opening, a removal opening, and a set of electric field generators. The passage is provided with gel and buffer solution. The receiving opening is disposed in the passage. The removal opening is also disposed in the passage. The electric field generators generate an electric field in the passage so that a plurality of charged substances in the passage migrates from the receiving opening to the removal opening.

Abstract: A white organic light-emitting diode includes two symmetric emission layers and a middle emission layer. The two symmetric emission layers emit a first color light with approximately the same frequency components. The middle emission layer is located between the two symmetric emission layers. The middle emission layer emits a second color light with frequency components different from main frequency components of the first color light. When the voltage applied to the organic light-emitting diode changes and leads to a decrease of luminescent intensity of one of the symmetric emission layers, the other symmetric emission layer automatically increases the luminescent intensity to compensate for the reduced light intensity.

Abstract: An organic electro-luminescent device. The device comprises two electrodes and an organic electro-luminescent structure interposed therebetween. The electrodes are disposed on a substrate, one serving as an anode and the other as a cathode. The organic electro-luminescent structure comprises a fluorescent emissive layer, a phosphorescent emissive layer and a nondoped organic material layer interposed therebetween. The phosphorescent emissive layer has a host material. The nondoped organic material layer has a highest occupied molecular orbital (HOMO) energy level no higher than that of the host material in the phosphorescent emissive layer.

Abstract: A cellular microarray is disclosed, which has a substrate, multiple first conductive lines, multiple second conductive lines, and multiple PIREs arranged on the surface of the substrate in an array. Each PIRE includes multiple first ring-shaped electrodes, and multiple second ring-shaped electrodes. The first ring-shaped electrodes, and the second ring-shaped electrodes are located on the surface of the substrate alternately in each PIRE. Moreover, the outermost ring-shaped electrodes of any two adjacent feather-shaped electrodes are different. The disclosed cellular microarray can adhere the cells rapidly and uniformly, increase the output of manufacturing, and reduce the cost for manufacturing and application.

Abstract: A phosphorescent OLED uses a phosphorescent dopant in the emissive layer, the dopant includes a metal complex containing a plurality of moieties linking to a transition metal ion. One or more of the moieties contain a ligand with a C—SP3 carbon center. The transition metal ion can be an iridium ion. The C—SP3 carbon is linked to a chalcogen atom in an ion form, a nitrogen-containing heterocylic ring and two functional groups, wherein each of the functional groups is selected from aryl, alkyl and heteroaryl. The tetrahedral structure of this carbon center hinders close packing and intermolecular interactions and, therefore, renders the transport of holes in the light-emitting device more efficient. With such chemical structure and property, the self-quenching characteristics of the dopant in high doping concentration can be effectively reduced.

Abstract: A phosphorescent OLED uses a phosphorescent dopant in the emissive layer, the dopant includes a metal complex containing a plurality of moieties linking to a transition metal ion. One or more of the moieties contain a ligand with a C-SP3 carbon center. The transition metal ion can be an iridium ion. The C-SP3 carbon is linked to a chalcogen atom in an ion form, a nitrogen-containing heterocylic ring and two functional groups, wherein each of the functional groups is selected from aryl, alkyl and heteroaryl. The tetrahedral structure of this carbon center hinders close packing and intermolecular interactions and, therefore, renders the transport of holes in the light-emitting device more efficient. With such chemical structure and property, the self-quenching characteristics of the dopant in high doping concentration can be effectively reduced.

Abstract: An organic electro-luminescent device. The device comprises two electrodes and an organic electro-luminescent structure interposed therebetween. The electrodes are disposed on a substrate, one serving as an anode and the other as a cathode. The organic electro-luminescent structure comprises a fluorescent emissive layer, a phosphorescent emissive layer and a nondoped organic material layer interposed therebetween. The phosphorescent emissive layer has a host material. The nondoped organic material layer has a highest occupied molecular orbital (HOMO) energy level no higher than that of the host material in the phosphorescent emissive layer.

Abstract: An organic light-emitting device is provided, which comprises an anode, a cathode and a light-emitting layer between them. An organic light-emitting material having the structure of Formulas I or II is doped in the light-emitting layer. In the Formulas I and II, R1˜R9 are H, F, CF3, NO2, an alkyl group of 1 to 6 carbon atoms, an aryl group or any combinations thereof; and M is a transition metal atom.

Abstract: A white organic light-emitting diode includes two symmetric emission layers and a middle emission layer. The two symmetric emission layers emit a first color light with approximately the same frequency components. The middle emission layer is located between the two symmetric emission layers. The middle emission layer emits a second color light with frequency components different from main frequency components of the first color light. When the voltage applied to the organic light-emitting diode changes and leads to a decrease of luminescent intensity of one of the symmetric emission layers, the other symmetric emission layer automatically increases the luminescent intensity to compensate for the reduced light intensity.

Abstract: A phosphorescent OLED uses a phosphorescent dopant in the emissive layer, the dopant includes a metal complex containing a plurality of moieties linking to a transition metal ion. One or more of the moieties contain a ligand with a C—SP3 carbon center. The transition metal ion can be an iridium ion. The C—SP3 carbon is linked to a chalcogen atom in an ion form, a nitrogen-containing heterocylic ring and two functional groups, wherein each of the functional groups is selected from aryl, alkyl and heteroaryl. The tetrahedral structure of this carbon center hinders close packing and intermolecular interactions and, therefore, renders the transport of holes in the light-emitting device more efficient. With such chemical structure and property, the self-quenching characteristics of the dopant in high doping concentration can be effectively reduced.