Patents by Inventor Chuni Ghosh

Chuni Ghosh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11916355
    Abstract: Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: February 27, 2024
    Assignee: Princeton Optronics, Inc.
    Inventors: Jean-Francois Seurin, Robert Van Leeuwen, Chuni Ghosh
  • Patent number: 11728620
    Abstract: Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: August 15, 2023
    Assignee: Princeton Optronics, Inc.
    Inventors: Chuni Ghosh, Guoyang Xu, Qing Wang
  • Publication number: 20230088107
    Abstract: An optical element for introducing a predetermined phase delay into incident electromagnetic radiation. The optical element comprises a first layer and a second layer arranged in a propagation path of a portion of the electromagnetic radiation. The first layer comprises a transmission regions configured to introduce a first phase delay into the portion of electromagnetic radiation propagating therethrough. The second layer comprises a metasurface configured to introduce a second phase delay into the portion of electromagnetic radiation propagating therethrough. The metasurface comprises subwavelength sized structures .
    Type: Application
    Filed: December 16, 2020
    Publication date: March 23, 2023
    Applicant: ams AG
    Inventors: Anderson SINGULANI, Mai LIJIAN, Jozef PULKO, Gernot FASCHING, Jean-Francois Pierre SEURIN, Chuni GHOSH
  • Patent number: 11527868
    Abstract: A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: December 13, 2022
    Assignee: Princeton Optronics, Inc.
    Inventors: Chuni Ghosh, Jean-Francois Seurin, Laurence Watkins, Guoyang Xu
  • Patent number: 11442284
    Abstract: An apparatus that includes a structured light projector which includes a light source, a metalens, and a diffractive optical element (DOE) multiplier. Each of the metalens and the DOE multiplier is integrated onto the light source. The structured light projector is operable such that light beams produced by the light source pass through the metalens and the DOE multiplier.
    Type: Grant
    Filed: July 23, 2019
    Date of Patent: September 13, 2022
    Assignee: AMS SENSORS ASIA PTE. LTD.
    Inventors: Chuni Ghosh, Jean-Francois Seurin, Maik Scheller, Baiming Guo
  • Patent number: 11394175
    Abstract: A proximity sensor which uses very narrow divergent beams from Vertical Cavity Surface Emitting Laser (VCSEL) for the illumination source is disclosed. Narrow divergent beams in the range 0.5 to 10 degrees can be achieved to provide high proximity sensing accuracy in a small footprint assembly. One approach to reducing the beam divergence is to increase the length of the VCSEL resonant cavity using external third mirror. A second embodiment extends the length of the VCSEL cavity by modifying the DBR mirrors and the gain region. Optical microlenses can be coupled with the VCSEL to collimate the output beam and reduce the beam divergence. These can be separate optical elements or integrated with the VCEL by modifying the substrate output surface profile or an added a transparent layer. These methods of beam divergence reduction are incorporated into various embodiment configurations to produce a miniature proximity sensor suitable for cell phones and tablets.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: July 19, 2022
    Assignee: Princeton Optronics, Inc.
    Inventors: Chuni Ghosh, Jean-Francois Seurin
  • Publication number: 20220037856
    Abstract: A device includes an illumination device for emitting an illumination beam. The illumination device includes an emitter array including multiple light emitters; and a micro-lens array (MLA) including multiple micro-lenses. The MLA is positioned to receive light emitted from the emitter array. Light from the MLA forms the illumination beam. A first region of the MLA is offset from the emitter array by a first offset amount, and a second region of the MLA is offset from the emitter array by a second offset amount different than the first offset amount.
    Type: Application
    Filed: September 23, 2019
    Publication date: February 3, 2022
    Inventors: Chuni Ghosh, Jean-Francois Seurin, Laurence Watkins, Baiming Guo, Markus Rossi
  • Patent number: 11195721
    Abstract: Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: December 7, 2021
    Assignee: Princeton Optronics, Inc.
    Inventors: Guoyang Xu, Jean-Francois Seurin, Chuni Ghosh
  • Publication number: 20210286189
    Abstract: An apparatus that includes a structured light projector which includes a light source, a metalens, and a diffractive optical element (DOE) multiplier. Each of the metalens and the DOE multiplier is integrated onto the light source. The structured light projector is operable such that light beams produced by the light source pass through the metalens and the DOE multiplier.
    Type: Application
    Filed: July 23, 2019
    Publication date: September 16, 2021
    Inventors: Chuni Ghosh, Jean-Francois Seurin, Maik Scheller, Baiming Guo
  • Publication number: 20210247504
    Abstract: Polarized light is produced using a VCSEL light source, wherein at least some of the polarized light is reflected or scattered by an object. At least some of the reflected or scattered polarized light is received in a sensor that is operable selectively to detect received light having a same polarization as the light produced by the VCSEL light source. In some instances, signals from the sensor are processed to obtain a three-dimensional distance image of the object or are processed using a time-of-flight technique to determine a distance to the object.
    Type: Application
    Filed: May 8, 2019
    Publication date: August 12, 2021
    Applicant: AMS SENSORS ASIA PTE. LTD
    Inventors: Chuni GHOSH, Jean-Francois SEURIN
  • Publication number: 20210218231
    Abstract: A multilayer interconnect is described which enables electrically connecting a complex distribution of VCSEL or other light emitter elements in a large high density addressable array. The arrays can include many groups of VCSEL elements interspersed among each other to form a structured array. Each group can be connected to a contact pad so that each group of light emitter elements can be activated separately.
    Type: Application
    Filed: August 21, 2018
    Publication date: July 15, 2021
    Inventors: Chuni Ghosh, Jean-Francois Seurin, Laurence Watkins, Guoyang XU
  • Publication number: 20210203131
    Abstract: A VCSEL device includes a substrate and a laser cavity that includes a gain section disposed between first and second reflectors. The VCSEL device is operable to emit light through a first end of the VCSEL device. The VCSEL device includes an anode surface mount contact and a cathode surface mount contact, each which is disposed at a second end of the VCSEL device opposite the first end of the VCSEL device.
    Type: Application
    Filed: May 22, 2019
    Publication date: July 1, 2021
    Applicant: ams Sensors Asia Pte. Ltd.
    Inventors: Laurence WATKINS, Jean-Francois Pierre SEURIN, Chuni GHOSH
  • Publication number: 20210194212
    Abstract: A VCSEL includes a substrate, and an epitaxial VSCEL structure on the substrate. The epitaxial VSCEL structure includes a resonant cavity, including a gain region, disposed between a first reflector and a partially reflecting second reflector. At least one of the first or second reflectors includes a first sub-wavelength grating to provide spectral control for optical emission from the VCSEL. The first sub-wavelength grating can be operable to lock a wavelength of an optical beam for emission from the VCSEL substantially to a wavelength defined by the grating.
    Type: Application
    Filed: August 26, 2019
    Publication date: June 24, 2021
    Inventors: Chuni Ghosh, Jean-Francois Seurin, Maik Scheller
  • Publication number: 20210119414
    Abstract: Semiconductor devices, such as vertical-cavity surface-emitting lasers, and methods for manufacturing the same, are disclosed. The semiconductor devices include contact extensions and electrically conductive adhesive material, such as fusible metal alloys or electrically conductive composites. In some instances, the semiconductor devices further include structured contacts. These components enable the production of semiconductor devices having minimal distortion. For example, arrays of vertical-cavity surface-emitting lasers can be produced exhibiting little to no bowing. Semiconductor devices having minimal distortion exhibit enhanced performance in some instances.
    Type: Application
    Filed: December 26, 2018
    Publication date: April 22, 2021
    Inventors: Chuni Ghosh, Guoyang XU, Qing Wang
  • Publication number: 20210057883
    Abstract: Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.
    Type: Application
    Filed: December 26, 2018
    Publication date: February 25, 2021
    Inventors: Jean-Francois Seurin, Robert Van Leeuwen, Chuni Ghosh
  • Publication number: 20210057888
    Abstract: Structured light projection system include narrow beam divergence semiconductor sources. The structured light projector system includes an array of narrow beam divergence semiconductor sources, and a projection lens operable to generate an image of the array of narrow beam divergence semiconductor source. Each narrow beam divergence semiconductor source can include an extended length mirror that helps suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.
    Type: Application
    Filed: December 27, 2018
    Publication date: February 25, 2021
    Inventors: Jean-Francois Seurin, Chuni Ghosh, Robert Van Leeuwen
  • Publication number: 20200350175
    Abstract: Ohmic contacts, including materials and processes for forming n-type ohmic contacts on n-type semiconductor substrates at low temperatures, are disclosed. Materials include reactant layers, n-type dopant layers, capping layers, and in some instances, adhesion layers. The capping layers can include metal layers and diffusion barrier layers. Ohmic contacts can be formed on n-type semiconductor substrates at temperatures between 150 and 250° C., and can resist degradation during operation.
    Type: Application
    Filed: January 14, 2019
    Publication date: November 5, 2020
    Inventors: Guoyang XU, Jean-Francois Seurin, Chuni Ghosh
  • Publication number: 20200333131
    Abstract: The present disclosure describes techniques to improve the resolution and reduce the distortion of structured light projection in miniature wide-angle VCSEL array projection modules used for 3D imaging and gesture recognition. The projector module includes a chief ray corrector optical element, which directs the VCSEL beams along the projector lens chief ray paths. The VCSEL structured illumination projector using the chief ray optical element corrector can create a high resolution, low distortion structured light pattern over an extended distance range greater that the projector lens image focal range. The corrector element is placed close to the VCSEL array. The corrector element can be implemented in various ways including, for example, a refractive lens, diffractive lens or microlens array, depending on the specific application requirements and optical configurations.
    Type: Application
    Filed: November 9, 2018
    Publication date: October 22, 2020
    Applicant: Princeton Optronics, Inc.
    Inventors: Baiming GUO, Jean-Francois SEURIN, Chuni GHOSH, Laurence WATKINS
  • Patent number: 10707650
    Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.
    Type: Grant
    Filed: August 2, 2018
    Date of Patent: July 7, 2020
    Assignee: Princeton Optronics, Inc.
    Inventors: Chuni Ghosh, Jean-Francois Seurin, Delai Zhou, Laurence Watkins
  • Publication number: 20200127441
    Abstract: A proximity sensor which uses very narrow divergent beams from Vertical Cavity Surface Emitting Laser (VCSEL) for the illumination source is disclosed. Narrow divergent beams in the range 0.5 to 10 degrees can be achieved to provide high proximity sensing accuracy in a small footprint assembly. One approach to reducing the beam divergence is to increase the length of the VCSEL resonant cavity using external third mirror. A second embodiment extends the length of the VCSEL cavity by modifying the DBR mirrors and the gain region. Optical microlenses can be coupled with the VCSEL to collimate the output beam and reduce the beam divergence. These can be separate optical elements or integrated with the VCEL by modifying the substrate output surface profile or an added a transparent layer. These methods of beam divergence reduction are incorporated into various embodiment configurations to produce a miniature proximity sensor suitable for cell phones and tablets.
    Type: Application
    Filed: December 28, 2017
    Publication date: April 23, 2020
    Inventors: Chuni Ghosh, Jean-Francois Seurin