Abstract: Provided is a medical device implantation apparatus, comprising: an outer sheath, connected to a first portion of a handle and extending from a proximal end to a distal end; a middle sheath, the middle sheath being arranged in the outer sheath, and the middle sheath being connected to a second portion of the handle; an inner sheath, the inner sheath being allowed to pass through the middle sheath, the inner sheath being connected to a third portion of the handle, and the inner sheath being movable relative to the outer sheath; outer casings, with at least two outer casings being provided, and a distal end of the inner sheath being respectively fixedly connected to the outer casings; and a medical device, arranged around the inner sheath and partially accommodated in the outer casings.

Abstract: A monocrystalline SiC substrate comprising a first surface and a second surface. The first surface comprises pinning regions and a device region. Each of the pinning regions is configured to provide a potential well which is capable to attract dislocations from a region surrounding said pinning region. The device region is configured to provide a part of the monocrystalline SiC substrate for manufacturing a semiconductor device. The device region is surrounded by the pinning regions, and a density of dislocations in a central portion of the device region is smaller than a density of dislocations in an edge of the device region due to the pinning regions. The pinning regions surrounding the device region attracts dislocations of the device region into the edge portion, so that the density of dislocations in the central portion is reduced. A yield of the semiconductor devices is improved.

Abstract: A traction apparatus, comprising a clip portion (2) and a traction portion (1), the traction portion containing a closed traction structure (11); the closed traction structure being made from an elastic material; the clip portion comprising a main clip body (23, 25) and a clip arm (24, 26); the main clip body being capable of passing through a biopsy channel (4) of an endoscope (3), the clip arm being capable of clip the closed traction structure. Also disclosed is a traction ring used for the traction apparatus, the traction ring being a single closed traction structure or being formed by connecting several closed traction structures, the traction ring being made from an elastic material.

Abstract: The electronic device includes a folding apparatus and a flexible display. The folding apparatus is configured to bear the flexible display. An elastic component of the folding apparatus may transfer an elastic force to the flexible display by using a housing of the folding apparatus. A force that is away from a main shaft and that is applied to the flexible display when the electronic device is in a flattened state is greater than a force that is away from the main shaft and that is applied to the flexible display when the electronic device is in a closed state.

Abstract: An endoscope end cap, including a sleeve member, protrusion elements, and a movable sleeve. The sleeve member is connected to the front end of an endoscope, the sleeve member, the protrusion elements, and the movable sleeve are connected in sequence, and the movable sleeve can move freely on the outer surface of the endoscope. When the endoscope is inserted for examination, the end cap is easy to enter and does not scratch the digestive tract since the end cap has a cylinder-like structure which is smooth and has no angularity; when the endoscope is being withdrawn, the movable sleeve moves distally and abuts against the sleeve member, so as to support the protrusion elements to enable the protrusion elements to dilate the inner wall of the intestine, improving the quality of single endoscope examination, and reducing discomfort of a patient, operation risk, and operation time.

Abstract: Provided are a high quality silicon carbide seed crystal, a silicon carbide crystal, a silicon carbide substrate, and a preparation method therefor. A high quality silicon carbide seed crystal is prepared, the dopant concentrations of a thermal insulation material, a graphite crucible, and a silicon carbide powder material are controlled, a specific crystal growth process and a wafer machining means are integrated, and a high quality silicon carbide substrate is obtained. The obtained silicon carbide substrate has a high crystalline quality and an extremely low amount of micropipes, screw dislocation density, and compound dislocation density; said substrate also has an extremely low p-type dopant concentration, exhibits superior electrical performance, and has a high surface quality.

Abstract: A silicon carbide single crystal wafer and a preparation method therefor, a silicon carbide crystal and a preparation method therefor, and a semiconductor device. The surface of the silicon carbide single crystal wafer is such that an included angle between a normal direction and a c direction is 0-8 degrees, and aggregated dislocations on the silicon carbide single crystal wafer are less than 300/cm2; the aggregated dislocation is a dislocation aggregated condition in which the distance between the geometric centers of any two corrosion pits in the corrosion pits obtained after corrosion of melted KOH is less than 80 microns. Even if the dislocation density is relatively high, the aggregated dislocation density is relatively small, thereby increasing the yield of a silicon carbide-based devices.

Abstract: Provided are a pressure-pump cartridge and a pressure pump, where the pressure-pump cartridge includes a cylinder, where the cylinder has a first chamber, a piston chamber and a second chamber hat are in communication in sequence, and the piston chamber is used for being in sealing fit with a piston. An end of the first chamber remote from the piston chamber is provided with a first opening allowing entry of the piston, and during installation, the piston enters the first chamber by the first opening and enters the piston chamber after passing through the first chamber, and meanwhile, the first chamber is configured to be in a clearance fit with the piston, such that the size of the first chamber is larger than that of the piston.

Abstract: A medical drainage stent that includes a stent body, and a proximal portion and a distal portion that are located at two ends of the stent body for connecting a first tissue wall and a second tissue wall in a juxtaposing manner. The stent body is fixed between the first tissue wall and the second tissue wall to provide a drainage channel. The proximal portion of the stent has N extension portions, where a fixed end of the extension portion is fixedly connected with an edge of a proximal end of the stent body, and the other end of the extension portion is a free end in a free state. Structures of the N extension portions at least partially protrude from the stent body in a radial direction, so that the proximal portion of the stent is fixed on the first tissue wall, where N is a positive integer.

Abstract: Disclosed is a stone extraction basket, comprising a mesh basket (1), an outer tube (2) and an operation portion (10), wherein the mesh basket (1) is connected to the operation portion (10), and the operation portion (10) can control the mesh basket (1) to move; a proximal end of the outer tube (2) is connected to the operation portion (10), the outer tube axially extends from the proximal end to a distal end, and the distal end of the outer tube (2) is provided with a double lumen end cap (5); and a guide wire (4) passing through one lumen channel (B7) of the double lumen end cap (5), and the mesh basket (1) passes through the other lumen channel (A6) of the double lumen end cap (5). The stone extraction basket solves the existing technical problem of the mesh basket being hampered from removing a calculus and being withdrawn from the biliary tract because the guide wire is driven by the end cap at the distal end of the mesh basket.

Abstract: An intraluminal stent (1) and a preparation method therefor are provided. The intraluminal stent (1) includes at least one sub-stent. The sub-stent includes at least a first wire (4) extending along a first spiral direction and at least a second wire (5) extending along a second spiral direction, and the first wire (4) and the second wire (5) extend in different directions to form several wire intersection points. The intraluminal stent (1) has several wrapped portions (2) to wrap two corresponding wire tail ends. A wrapping connector (3) is disposed at a periphery of the wrapped portion (2). Two end portions of the wrapping connector (3) are firmly connected to regions corresponding to two ends of the wrapped portion (2). The two wire tail ends of the wrapped portions (2) are wrapped by using the wrapping connector (3). The stent (1) is less harmful to intraluminal tissues and a relatively strong tensile resistance.

Abstract: A medical connecting device, having a proximal end and a distal end; the medical connecting device includes an insulating layer (3, 123, 222, 322) and a spiral tube (2, 124, 223, 323), the insulating layer (3, 123, 222, 322) covering the outermost layer of the whole device; the spiral tube (2, 124, 223, 323) has a conductive hollow tubular structure; and the spiral tube (2, 124, 223, 323) has a spiral structure, and a pitch of the spiral structure gradually changes in the direction from the proximal end to the distal end. The medical connecting device is able to integrate multiple functions such as electricity conducting, liquid passage, powder spraying, negative pressure suction, sealing, insulation, and support.

Abstract: The limiting device includes a clamping portion and a movable portion; the clamping portion and the movable portion are both annular structures, two ends of the clamping portion and the movable portion are respectively connected to form a connected double-ring structure, and the ring diameter of the movable portion is larger than that of the clamping portion. The limiting device is disposed on a core rod, the clamping portion and the core rod are in interference fit, and the movable portion and the core rod are in clearance fit. When the movable portion cooperates with the core rod, the limiting device may slide relative to the core rod; when the clamping portion cooperates with the core rod, the limiting device and the core rod are in a fixed state, and the limiting device cannot slide relative to the core rod, thus achieving the purpose of limiting.

Abstract: Provided is a medical device implantation apparatus, comprising: an outer sheath (4), connected to a first portion of a handle (6) and extending from a proximal end to a distal end; a middle sheath (3), the middle sheath (3) being arranged in the outer sheath (4), and the middle sheath (3) being connected to a second portion of the handle (6); an inner sheath (2), the inner sheath (2) being allowed to pass through the middle sheath (3), the inner sheath (2) being connected to a third portion of the handle (6), and the inner sheath (2) being movable relative to the outer sheath (4); outer casings (1), with at least two outer casings being provided, and a distal end of the inner sheath (2) being respectively fixedly connected to the outer casings (1); and a medical device, arranged around the inner sheath (2) and partially accommodated in the outer casings (1). The medical device can be released by manipulating the third portion of the handle (6).

Abstract: Disclosed is a guide wire joint, comprising: a first cover board (1), a second cover board (2), a connecting part (3) connecting the first cover board and the second cover board, and a connecting piece (4); the connecting piece (4) can connect the guide wire joint to a medical device; a side of the first cover board (1) and a side of the second cover board (2), both are away from the connecting part (3), are contacted with or separated from each other to adjust closing and opening of the guide wire joint. When the guide wire joint is closed, a guide wire passage (10) is formed between the first cover board (1) and the second cover board (2) allowing the guide wire to pass through and penetrate into a guide wire cavity of a medical device having a C-shaped groove; and when the guide wire joint is opened, the guide wire can be rapidly detached from the guide wire joint, and can be rapidly separated from the medical device.

Abstract: A thermopuncture stent implantation device has a proximal end and a distal end, the distal end of a front handle is provided with an outer tube, an insulating middle tube is provided in the outer tube, a conductive part is provided in the insulating middle tube, a terminal of the proximal end of the conductive part is connected to an external power source, a boosting tube is provided between the proximal end of the outer tube and the insulating middle tube, the distal end of the boosting tube and the proximal end of the insulating middle tube are connected with each other, the distal end of the conductive part is provided with an insulating part, on which a conductive head connected with the conductive part is distributed; the stent, after being compressed, is located in a space between the distal end of the conductive part and the outer tube.

Abstract: An endoscope end cap, including a sleeve member, protrusion elements, and a movable sleeve. The sleeve member is connected to the front end of an endoscope, the sleeve member, the protrusion elements, and the movable sleeve are connected in sequence, and the movable sleeve can move freely on the outer surface of the endoscope. When the endoscope is inserted for examination, the end cap is easy to enter and does not scratch the digestive tract since the end cap has a cylinder-like structure which is smooth and has no angularity; when the endoscope is being withdrawn, the movable sleeve moves distally and abuts against the sleeve member, so as to support the protrusion elements to enable the protrusion elements to dilate the inner wall of the intestine, improving the quality of single endoscope examination, and reducing discomfort of a patient, operation risk, and operation time.

Abstract: A traction apparatus, comprising a clip portion (2) and a traction portion (1), the traction portion containing a closed traction structure (11); the closed traction structure being made from an elastic material; the clip portion comprising a main clip body (23, 25) and a clip arm (24, 26); the main clip body being capable of passing through a biopsy channel (4) of an endoscope (3), the clip arm being capable of clip the closed traction structure. Also disclosed is a traction ring used for the traction apparatus, the traction ring being a single closed traction structure or being formed by connecting several closed traction structures, the traction ring being made from an elastic material.

Abstract: Provided in the present invention is a three-dimensional precise intracavitary radiotherapy method and system for treating tumours, comprising the steps of: (1) lesion three-dimensional quantitative measurement and analysis of three-dimensional scanning image of the lesion cavity; (2) comprehensive analysis according to lesion three-dimensional quantitative measurement results and lesion characteristics to calculate the three-dimensional distribution of lesion radiation dose; and (3) according to the three-dimensional distribution diagram of radiation dose, selecting appropriate radiation sources and radiation dose to make a stent, and performing three-dimensional precise intracavitary radiotherapy. At the same time, also provided by the present invention is a system for achieving the above radiotherapy method.

Abstract: A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants.