Patents by Inventor Chunlan Feng

Chunlan Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TETRAHYDROISOQUINOLINE COMPOUND, PREPARATION METHOD THEREFOR, PHARMACEUTICAL COMPOSITION CONTAINING SAME, AND USE THEREOF
    Publication number: 20210040066
    Abstract: Disclosed are a novel tetrahydroisoquinoline compound, a method for preparing intermediates thereof, a pharmaceutical composition thereof and the use thereof. The tetrahydroisoquinoline compound of the present invention has a good inhibitory effect on phosphodiesterase (PDE4), and can be used in the prevention, treatment or auxiliary treatment of multiple diseases associated with the activity or expression of phosphodiesterase, especially PDE4-associated immune and inflammatory diseases, such as psoriasis and arthritis.
    Type: Application
    Filed: February 3, 2019
    Publication date: February 11, 2021
    Inventors: Yechun XU, Hong LIU, Wei TANG, Xianglei ZHANG, Zhanni GU, Heng LI, Xu HAN, Fenghua ZHU, Chunlan FENG, Guangyu DONG, Tiantian CHEN, Wuyan CHEN, Hualiang JIANG, Kaixian CHEN
  • MEDICAL USE OF ARTEMISININ DERIVATIVE FOR TREATING INFLAMMATORY BOWEL DISEASE
    Publication number: 20200030284
    Abstract: The present invention provides a use of artemisinin derivatives, or a pharmaceutically acceptable salt thereof, for the manufacture of a medicament for the treatment or adjuvant treatment of inflammatory bowel disease. In an animal model of inflammatory bowel disease induced by dextran sulfate sodium (DSS), the experimental results of the artemisinin derivative, or the pharmaceutically acceptable salt thereof, of the present invention showed that oral gavage administration can effectively alleviate colitis symptoms of IBD mice such as weight loss, diarrhea, and hematochezia, reduce pathological damage in colon tissue, inhibit the infiltration of inflammatory cells in colon tissue of IBD mice, and downregulate levels of disease-related proinflammatory cytokines.
    Type: Application
    Filed: March 26, 2018
    Publication date: January 30, 2020
    Inventors: Jianping ZUO, Wei TANG, Yuxi YAN, Ping Ll, Shijun HE, Zemin LIN, Xiaoqian YANG, Chunlan FENG, Fenghua ZHU
  • Magnetoresistive element and magnetic memory
    Patent number: 8895162
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: November 25, 2014
    Assignees: Kabushiki Kaisha Toshiba, National University Corporation Tohoku University
    Inventors: Katsuya Nishiyama, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Chunlan Feng
  • MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
    Publication number: 20120088125
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
    Type: Application
    Filed: September 19, 2011
    Publication date: April 12, 2012
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, KABUSHIKI KAISHA TOSHIBA
    Inventors: Katsuya NISHIYAMA, Wu Feng, Chunlan Feng, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine