Abstract: The present disclosure discloses a method for synthesizing quinolones intermediates by a continuous flow reaction. Specifically, according to the method, a microchannel reactor is used, which improves the selectivity and conversion rate of the reaction, and the conversion rate of compound ii is increased to more than 95% and the yield is increased to more than 85%; avoids the use of a solvent such as methanol, and methyl tert-butyl ether, etc., in the intermittent reaction process, which simplifies the post-processing method, shortens the overall operation time from about 24 hours to a few minutes, greatly improving the production efficiency, and realizing the continuity and automation of the whole process; and thus makes the product have high purity and high yield, which is suitable for industrial production.

Abstract: The disclosure discloses a fatty acid synthase inhibitor and application thereof and belongs to the technical field of medical biology. The fatty acid synthase inhibitor of the disclosure can significantly inhibit the activity of fatty acid synthase without affecting normal expression, and adjust the ratio of fatty acids in cells. The fatty acid synthase inhibitor of the disclosure has a good tumor proliferation inhibitory effect, can arrest the growth cycle of tumor cells in the interphase, prevent tumor cell division, inhibit tumor cell proliferation, promote tumor cell apoptosis and exert a tumor treatment effect, can be used to treat tumors and metabolism related diseases, and has an important clinical application prospect.

Abstract: The present disclosure relates to a combined treatment method for surface modification of fumed silica, which comprises the following steps: (1) two sets of modification devices are used to jointly treat fumed silica; the fumed silica is modified with a modifier in the reaction furnace of each set of modification devices to obtain two groups of modified fumed silica and exhaust gas respectively; (2) the exhaust gas obtained in step (1) is separated respectively to obtain unreacted modifier and by-products, and the obtained by-products are input into the reaction furnace of the other set of modification devices as reaction assistants to participate in the modification reaction; and the obtained unreacted modifiers are returned to the reaction furnace of the original modification device for repeated use.

Abstract: A recognition apparatus for extracting first features of an object from a region of the object; obtaining second features of the object at least based on confidence information for first attribute of the object; determining sample information from pre-determined sample information based on the obtained second features; and recognizing the first attribute of the object based on the determined sample information.

Abstract: A gas nozzle (100), a gas reaction device (10) and a gas hydrolysis reaction method. A plurality of fuel gas channels (116) are provided on a side wall of a nozzle cavity (110) of the gas nozzle (100); the plurality of fuel gas channels (116) are arranged around the side wall of the nozzle cavity (110); a mixed gas introduced from a nozzle inlet (112) is surrounded by a fuel gas (21) introduced from the plurality of fuel gas channels (116); and the fuel gas channels (116) are inclined towards a nozzle outlet (114), and the fuel gas channels (116) are further inclined in the same clockwise direction. In this way, the fuel gas (21) introduced from the plurality of fuel gas channels (116) forms a downwardly conical spiral flame, and a flame formed by the mixed gas introduced from the nozzle inlet (112) is wrapped therein and sprayed out from the nozzle outlet (114).

Abstract: The present invention relates to a demount-free electrical cleanable filter, which includes a housing and a main filter cylinder in the housing. the housing is provided with a cleaning hoop and a reciprocating driving device. The cleaning hoop is sleeved on cylinder filtering material of the main filter cylinder. The reciprocating driving device drives the cleaning hoop to move up and down repeatedly, so as to conduct a clean-up operation on the main filter cylinder. The beneficial effect of the present invention is as follows. The present invention can be used in vehicle using fuel, engine and industry, environmental filtering, according to the flow rate and different designs of material. By a novel structure design, the lifetime of the present filter is greatly improved. During the entire life cycle of the filter, an apparatus which uses the present filter does not need to replace the fuel filter.

Abstract: A recognition apparatus for extracting first features of an object from a region of the object; obtaining second features of the object at least based on confidence information for first attribute of the object; determining sample information from pre-determined sample information based on the obtained second features; and recognizing the first attribute of the object based on the determined sample information.

Abstract: The present invention relates to a demount-free electrical cleanable filter, which includes a housing and a main filter cylinder in the housing. the housing is provided with a cleaning hoop and a reciprocating driving device. The cleaning hoop is sleeved on cylinder filtering material of the main filter cylinder. The reciprocating driving device drives the cleaning hoop to move up and down repeatedly, so as to conduct a clean-up operation on the main filter cylinder. The beneficial effect of the present invention is as follows. The present invention can be used in vehicle using fuel, engine and industry, environmental filtering, according to the flow rate and different designs of material. By a novel structure design, the lifetime of the present filter is greatly improved. During the entire life cycle of the filter, an apparatus which uses the present filter does not need to replace the fuel filter.

Abstract: The present invention discloses a short-gate tunneling field effect transistor having a non-uniformly doped vertical channel and a fabrication method thereof. The short-gate tunneling field effect transistor has a vertical channel and the channel region is doped in such a slowly-varied and non-uniform manner that a doping concentration in the channel region appears as a Gaussian distribution along a vertical direction and the doping concentration in the channel near the drain region is higher while the doping concentration in the channel near the source region is lower; and double control gates are formed at both sides of the vertical channel and the control gates form an L-shaped short-gate structure, so that a gate underlapped region is formed in the channel near the drain region, and a gate overlapped region is formed at the source region.

Abstract: The present invention discloses a tunneling field effect transistor having a three-side source and a fabrication method thereof, referring to field effect transistor logic devices and circuits in CMOS ultra large scale integrated circuits (ULSI). By means of the strong depletion effect of the three-side source, the transistor can equivalently achieve a steep doping concentration gradient for the source junction, significantly optimizing the sub-threshold slope of the TFET. Meanwhile, the turn-on current of the transistor is boosted. Furthermore, due to a region uncovered by the gate between the gate and the drain, the bipolar conduction effect of the transistor is effectively inhibited, and on the other hand, in the small-size transistor a parasitic tunneling current at the corner of the source junction is inhibited. The fabrication method is simple and can be accurately controlled.

Abstract: Provided are a method for suppressing a leakage current of a tunnel field-effect transistor (TFET), a corresponding device, and a manufacturing method, related to the field of field-effect transistor logic devices and circuits in CMOS ultra large-scale integration (ULSI). By inserting an insulating layer (7) between a source region (10) and a transistor body below a tunneling junction, and by inserting no insulating layer at a tunneling junction between a source region and a channel, a source/drain direct tunneling leakage current in a small-sized TFET device is effectively suppressed, and a threshold slope is effectively improved. The manufacturing method for the corresponding device is completely compatible with an existing CMOS process.

Abstract: The present invention discloses a junction-modulated tunneling field effect transistor and a fabrication method thereof, belonging to a field of field effect transistor logic device and the circuit in connection with CMOS ultra large scale integrated circuit (ULSI). The PN junction provided by a highly-doped source region surrounding three sides of the vertical channel region of the tunneling field effect transistor can deplete effectively the channel region, so that the energy band of the surface channel under the gate is lifted, therefore the device may obtain a steeper energy band and a narrower tunneling barrier width than the conventional TFET when the band-to-band tunneling occurs, equivalently achieving the effect of a steep doping concentration gradient at the source tunneling junction, and thereby the sub-threshold characteristics are significantly improved while the turn-on current of the device is improved relative to the conventional TFET.

Abstract: A deacidification apparatus and a deacidification process using the apparatus are disclosed. The deacidification apparatus includes a deacidification furnace, of which a furnace upper section, a furnace middle section and a furnace lower section are provided in upper, middle and lower portions respectively, wherein a gas-solid mixture inlet (1), a exhaust outlet (3) and a filtered air port (2) are provided on the furnace upper section, a product outlet (13) is provided on the furnace lower section, the upper portion of the deacidification is mounted with a filter (5) to which the gas-solid mixture inlet (1), the exhaust outlet (2) and the filtered air port (3) are connected, the filtered air port (2) is connected with a gas pulse device and a vacuum device by a three-way connecting device, and the exhaust outlet (3) is connected with atmosphere or connected with the vacuum device.

Abstract: The present invention discloses a tunneling field effect transistor having a three-side source and a fabrication method thereof, referring to field effect transistor logic devices and circuits in CMOS ultra large scale integrated circuits (ULSI). By means of the strong depletion effect of the three-side source, the transistor can equivalently achieve a steep doping concentration gradient for the source junction, significantly optimizing the sub-threshold slope of the TFET. Meanwhile, the turn-on current of the transistor is boosted. Furthermore, due to a region uncovered by the gate between the gate and the drain, the bipolar conduction effect of the transistor is effectively inhibited, and on the other hand, in the small-size transistor a parasitic tunneling current at the corner of the source junction is inhibited. The fabrication method is simple and can be accurately controlled.

Abstract: The present invention discloses a strip-shaped gate tunneling field effect transistor using composite mechanism and a fabrication method thereof, which belongs to a field of field effect transistor logic devices and circuits in the CMOS ultra large scale integrated circuit (ULSI). According to the tunneling field effect transistor, the energy band of the channel underneath the gate is elevated by means of a change of the gate morphology and the PN junction depletion effect occurred at both sides of the strip-shaped gate, so that the sub-threshold characteristics of the transistor are improved. Meanwhile, the on-state current of the transistor is effectively increased by means of the composite mechanism introduced by the two parts of the doped source region.

Abstract: The present invention discloses a short-gate tunneling field effect transistor having a non-uniformly doped vertical channel and a fabrication method thereof. The short-gate tunneling field effect transistor has a vertical channel and the channel region is doped in such a slowly-varied and non-uniform manner that a doping concentration in the channel region appears a Gaussian distribution along a vertical direction and the doping concentration in the channel near the drain region is higher while the doping concentration in the channel near the source region is lower; and double control gates are formed at both sides of the vertical channel and the control gates form an L-shaped short-gate structure, so that a gate underlapped region is formed in the channel near the drain region, and a gate overlapped region is formed at the source region.

Abstract: The present invention describes a novel synthetic method for preparing the key intermediate 2,6,10-trimethyl-1,1-dialkoxy-3,5,9-undecatriene of lycopene. An existing synthetic method have some disadvantages that it is very difficult to gain the raw material dialkyl 4-methyl-5,5-diakoxy-1-pentene-1-phosphonate (10) because no effective synthetic method can be adopted, and furthermore the obtained target compound is composed of several cis/trans isomers. This invention relates to a process comprising a condensation step wherein a starting C10-phosphonate is changed to its carbanion completely at a temperature of ?40˜30 under an atmosphere of a non-reactive gas in an organic solvent catalyzed by base, and then C4-dialkyl is added to undergo Wittig-Horner condensation. This invention affords all trans C14-acetal and this method is characterized with the advantages of simple procedure, easy access to raw material and low cost, which makes it has the value of industrial application.

Abstract: A deacidification apparatus and a deacidification process using the apparatus are disclosed. The deacidification apparatus includes a deacidification furnace, of which a furnace upper section, a furnace middle section and a furnace lower section are provided in upper, middle and lower portions respectively, wherein a gas-solid mixture inlet (1), a exhaust outlet (3) and a filtered air port (2) are provided on the furnace upper section, a product outlet (13) is provided on the furnace lower section, the upper portion of the deacidification is mounted with a filter (5) to which the gas-solid mixture inlet (1), the exhaust outlet (2) and the filtered air port (3) are connected, the filtered air port (2) is connected with a gas pulse device and a vacuum device by a three-way connecting device, and the exhaust outlet (3) is connected with atmosphere or connected with the vacuum device.

Abstract: The present invention relates to an intermediate (12) of lycopene of 2,6,10-trimethyl-1,1-dialkoxyl-3,5,9-undecantriene of formula, (12) and its intermediate of 4-methyl-5,5-dialkoxyl-1-pentenyl-1-phosphonic acid dialkyl ester of formula (10), and their preparation methods. The process route is simple, the starting materials are available easily, the cost is low, and it is valuable in industry.

Abstract: The invention relates to a novel important lycopene intermediate 3,7,11-trimethyl-1,3,6,10-tetraene-dodecyl diethyl phosphonate. A current lycopene intermediate 2,4,6,10-tetra-double bond pentadec-carbon phosphonate is difficult to synthesize. The invention provides a novel intermediate, which has the following synthesis steps of: preparing 2,6,10-trimethyl-3,5,9-undecane triene-1-aldehyde from pseudoionone; preparing 2,6,10-trimethyl-2,5,9-undecane triene-1-aldehyde from the 2,6,10-trimethyl-3,5,9-undecane triene-1-aldehyde; and subjecting the 2,6,10-trimethyl-2,5,9-undecane triene-1-aldehyde and tetraethyl methylenediphosphonate to condensation reaction to obtain target product. The invention can generate novel intermediate from raw material pseudoionone only by four reactions, thus the reactions are easy to control and great industrial value are achieved.