Abstract: An FinFET structure includes a semiconductor substrate. A fin structure protrudes from the semiconductor substrate. A gate crosses the fin structure. A source region and a drain region are respectively disposed on the fin structure at two sides of the gate. The source region includes a first epitaxial layer and a third epitaxial layer respectively embedded in the fin structure. A first non-epitaxial region is defined as the fin structure between the first epitaxial layer and the third epitaxial layer. The drain region includes a second epitaxial layer and a fourth epitaxial layer respectively embedded in the fin structure. A second non-epitaxial region is defined as the fin structure between the second epitaxial layer and the fourth epitaxial layer. A first contact plug is disposed on the third epitaxial layer and a second contact plug is disposed on the fourth epitaxial layer.

Abstract: A semiconductor device and method of fabricating the same, includes a substrate, a recess, a first gate dielectric layer, a first gate electrode, and a first plug. The substrate includes a medium-voltage region and a low-voltage region. The recess is disposed in the substrate, within the medium-voltage region. The first gate dielectric layer is disposed on a plane of the recess. The first gate electrode is disposed on the first gate dielectric layer. The first plug is disposed on the first gate electrode and on the recess, and the first plug is electrically connected the first gate electrode.

Abstract: A transistor structure includes a substrate and an active area defined by a trench isolation region on the substrate. The active area includes a source region, a drain region spaced apart from the source region, and a channel region between the source region and the drain region. A gate is disposed on the channel region. The gate has a gate length that is in parallel with a source-to-drain direction and a gate width that is smaller than a width of the active area.

Abstract: A semiconductor device includes a substrate, a gate structure, a drain region and a source region. The substrate includes a first step structure. The first step structure includes a first step portion, a connecting portion and a second step portion arranged sequentially along a direction, and the second step portion is higher than the first step portion. The gate structure is disposed on the connecting portion. The drain region is disposed in the first step portion. The source region is disposed in the second step portion.

Abstract: A semiconductor structure includes a substrate with a plurality of fins, a first well, and a second well in the substrate. The plurality of fins partially overlaps the first well and partially overlaps the second well. An epitaxial source region is arranged on the plurality of fins in the first well, and an epitaxial drain region is arranged on the plurality of fins in the second well. A gate is arranged on the plurality of fins between the epitaxial source region and the epitaxial drain region. A trench isolation region is disposed in the second well between the gate and the epitaxial drain region. A slot contact is disposed on the trench isolation region.

Abstract: An extended drain metal oxide semiconductor transistor includes a substrate. A gate is disposed on the substrate. A source doped region is disposed in the substrate at one side of the gate. A drain doped region is disposed in the substrate at another side of the gate. A thin gate dielectric layer is disposed under the gate. A thick gate dielectric layer is disposed under the gate. The thick gate dielectric layer extends from the bottom of the gate to contact the drain doped region. A second conductive type first well is disposed in the substrate and surrounds the source doped region and the drain doped region. A deep well is disposed within the substrate and surrounds the second conductive type first well.

Abstract: A semiconductor transistor structure includes a substrate; an active region located on the substrate and surrounded by a trench isolation region; a source structure located in the active region, including a source LDD region and a heavily doped source region; a drain structure located in the active region and spaced apart from the source structure, wherein the drain structure includes a drain LDD region and a heavily doped drain region; a gate structure located on the active region and between the source structure and the drain structure; and a first embedded epitaxial structure disposed in the drain LDD region and located between the gate structure and the heavily doped drain region.

Abstract: A micro-integrated circuit (?IC) detection method is applicable for detecting a plurality of ?ICs on a panel. The ?IC detection method includes: turning on the ?ICs arranged in columns and rows on the panel; scanning the ?ICs in each of the rows in sequence to obtain a total current of the ?ICs in each of the rows; and determining at least one of the ?ICs in one of the rows to be abnormal when the total current of the ?ICs in the one of the rows does not match a preset total current.

Abstract: The invention provides a semiconductor structure, which comprises a substrate, a high-voltage device region is defined on the substrate, in the high-voltage device region, the substrate comprises a first region, a first groove surrounds the first region, and a second region surrounds the first groove, and a contact gate structure is located in the high-voltage device region, when viewed from a top view, the contact gate structure comprises a plurality of columnar dielectric layers arranged in an array.

Abstract: An autonomous mobile robot and an operating method thereof are provided. The autonomous mobile robot includes a movement module, a detection module, a control module and an interaction module. The control module includes a determination unit and a navigation unit. The determination unit determines whether there is an obstacle near or on a predetermined path of the autonomous mobile robot according to the environment information. When the obstacle is on the predetermined path, the navigation unit decides an obstacle avoidance strategy according to the environment information and the type of the obstacle. The obstacle avoidance strategy at least includes moving along a side path, stopping aside to yield, moving backward and stopping at a yielding point to yield, and detouring. When the obstacle is near or on the predetermined path, the interaction module performs an interaction action according to the obstacle avoidance strategy and the type of the obstacle.

Abstract: A key structure including a carrier, a keycap, a lifting member, and an elastic member is provided. The carrier includes a carrier body and multiple positioning hooks. The carrier body has multiple vias, and the positioning hooks are respectively disposed corresponding to the vias. Orthographic projection of each of the positioning hooks falls in the corresponding via. Each of the positioning hooks includes a first positioning portion and a second positioning portion respectively connected to two inner wall surfaces in the corresponding via. The keycap is disposed above the carrier body. The lifting member is disposed between the carrier body and the keycap. One end of the lifting member is connected to the keycap, and an other end of the lifting member is connected to the positioning hooks. The elastic member is disposed between the carrier body and the keycap.

Abstract: A power module of an electric assisted bicycle is disclosed and includes a pedal shaft, a housing, a motor, a reducer and a gear-plate output shaft and a sensing component. The housing includes a partition portion extended along a radial direction to divide an inner space of the housing into a motor accommodation portion and a reducer accommodation portion for accommodating the motor and the reducer, respectively. A stator of the motor and a fixed gear are respectively fixed to a first side and a second side, which are two opposite sides of the partition portion. A reducer input shaft includes two ends connected to the motor and the reducer, respectively, and an input-shaft main part disposed therebetween is connected to a third side of the partition portion. With the connection configuration of the three sides of the partition portion, the space utilization of the entire power module is optimized.

Abstract: A control system for e-bike including a sensor and a driver is disclosed. The sensor senses a pedal of the bike being pedaled to generate a sensing signal. The driver continuously identifies whether the sensing signal matches with an unlocking condition during a first time-duration and whether the sensing signal matches with a mode-determination condition during a second time-duration. The driver controls the e-bike to enter a normal operation mode where a motor of the e-bike is unlocked when the sensing signal matches the unlocking condition, controls the e-bike to enter a standby mode when the sensing signal matches the mode-determination condition under the normal operation mode, or controls the e-bike to return to the normal operation mode when the sensing signal matches the mode-determination condition again under the standby mode.

Abstract: A system and a method for an autonomous mobile robot to ride and co-share an elevator with human(s) are disclosure. The core software modules and method proposed include a human detection and localization module, a human identification and state estimation module, a human-robot-interaction module, and an elevator confined space positioning module. Upon an elevator riding task is started, the human detection and localization module and the human identification and state estimation module detect and count the at least one human inside and/or outside the elevator, and the human-robot-interaction module interacts with the at least one human. The elevator confined space positioning module carries out a space positioning inside the elevator according to a result of detecting and counting the at least one human through the human detection and localization module and the human identification and state estimation module, and chooses to enter the elevator or restart another elevator riding task.

Abstract: A key module includes a base plate, a circuit layer and a lifting mechanism. The circuit layer is disposed on the base plate. The lifting mechanism is pivotally connected with the base plate relative to the circuit layer, and the lifting mechanism has an abutment element. The abutment element could interfere with the circuit layer to reduce the noise generated by the key module during operation.

Abstract: An extended drain metal oxide semiconductor transistor includes a substrate. A gate is disposed on the substrate. A source doped region is disposed in the substrate at one side of the gate. A drain doped region is disposed in the substrate at another side of the gate. A thin gate dielectric layer is disposed under the gate. A thick gate dielectric layer is disposed under the gate. The thick gate dielectric layer extends from the bottom of the gate to contact the drain doped region. A second conductive type first well is disposed in the substrate and surrounds the source doped region and the drain doped region. A deep well is disposed within the substrate and surrounds the second conductive type first well.

Abstract: The present invention provides a conjugated diene based rubber comprising a conjugated diene based copolymer comprising at least two conjugated diene monomer units and optionally comprising a vinyl aromatic hydrocarbon monomer unit, wherein the conjugated diene based copolymer comprises a first block composed of a first conjugated diene monomer unit and the vinyl aromatic hydrocarbon monomer unit or a second conjugated diene monomer unit, the second conjugated diene monomer unit being distinct from the first conjugated diene monomer unit, the first block being random; and a second block, comprising at least the second conjugated diene monomer unit and optionally comprising the vinyl aromatic hydrocarbon monomer unit, wherein the first block is connected to the second block, and the amount of the vinyl aromatic hydrocarbon monomer units or the second conjugated diene monomer units is at least 35 wt % of the first block.

Abstract: A key structure is provided. The key structure includes an elastic element and a keycap disposed on the elastic element. The elastic element includes a movable portion, a fixed portion and a connection portion. The fixed portion surrounds the movable portion. The connection portion connects the fixed portion with the movable portion. The keycap includes a first connection portion. The first connection portion is connected to the fixed portion or the movable portion.

Abstract: A key structure including a carrier, a keycap, a lifting member, and an elastic member is provided. The carrier includes a carrier body and multiple positioning hooks. The carrier body has multiple vias, and the positioning hooks are respectively disposed corresponding to the vias. Orthographic projection of each of the positioning hooks falls in the corresponding via. Each of the positioning hooks includes a first positioning portion and a second positioning portion respectively connected to two inner wall surfaces in the corresponding via. The keycap is disposed above the carrier body. The lifting member is disposed between the carrier body and the keycap. One end of the lifting member is connected to the keycap, and an other end of the lifting member is connected to the positioning hooks. The elastic member is disposed between the carrier body and the keycap.

Abstract: A sensing device including a substrate, a switching element, a sensing element and a common electrode is provided. The switching element is disposed on the substrate and includes a source electrode. The sensing element is disposed at one side of the switching element and includes a lower electrode, a photoelectric conversion layer and an upper electrode. The lower electrode is electrically connected to the source electrode. The photoelectric conversion layer is disposed on the lower electrode. The upper electrode is disposed on the photoelectric conversion layer. The common electrode is electrically connected to the upper electrode and belongs to the same film layer as the source electrode. A fabricating method of a sensing device is also provided.