Abstract: The invention relates to the field of oilfield chemistry, and discloses a self-repairing plugging gel polymer for drilling fluid, a preparation method and application thereof, and the drilling fluid containing the gel polymer, wherein the polymer contains a structural unit A, a structural unit B, a structural unit C and a structural unit D, and the structural unit A is a structural unit with a structure shown in the formula (1); the structural unit B is a structural unit with a structure shown in the formula (2); the structural unit C is a structural unit with a structure shown in the formula (3); the structural unit D is a structural unit having a structure represented by the formula (4).

Abstract: The invention relates to the technical field of oil and gas drilling, and discloses an amphiphilic block polymer ultralow-permeability agent and an intelligent temporary plugging type water-based drilling fluid. The ultralow-permeability agent contains a structural unit provided by styryl hydrophobic monomer, maleic anhydride and acrylamide; the drilling fluid contains two or more of water, sodium bentonite, Pac-Lv, the ultralow-permeability agent, calcium carbonate, one-way plugging agent, white asphalt and barite which are stored in a mixed manner or independently stored.

Abstract: The invention relates to the field of oilfield chemistry, and discloses a self-repairing plugging gel polymer for drilling fluid, a preparation method and application thereof, and the drilling fluid containing the gel polymer, wherein the polymer contains a structural unit A, a structural unit B, a structural unit C and a structural unit D, and the structural unit A is a structural unit with a structure shown in the formula (1); the structural unit B is a structural unit with a structure shown in the formula (2); the structural unit C is a structural unit with a structure shown in the formula (3); the structural unit D is a structural unit having a structure represented by the formula (4).

Abstract: The invention relates to the technical field of oil and gas drilling, and discloses an amphiphilic block polymer ultralow-permeability agent and an intelligent temporary plugging type water-based drilling fluid. The ultralow-permeability agent contains a structural unit provided by styryl hydrophobic monomer, maleic anhydride and acrylamide; the drilling fluid contains two or more of water, sodium bentonite, Pac-Lv, the ultralow-permeability agent, calcium carbonate, one-way plugging agent, white asphalt and barite which are stored in a mixed manner or independently stored.

Abstract: An ultralow-permeability agent contains a structural unit provided by styryl hydrophobic monomer, maleic anhydride and acrylamide; the drilling fluid contains two or more of water, sodium bentonite, Pac-Lv, the ultralow-permeability agent, calcium carbonate, one-way plugging agent, white asphalt and barite which are stored in a mixed manner or independently stored. When the amphiphilic block polymer provided by the invention is used as the ultralow-permeability agent of the intelligent temporary plugging type water-based drilling fluid, the self-adaptive characteristic is realized; according to the amphiphilic block polymer, temporary plugging layer gaps formed in pore and throats by plugging materials in drilling fluid can be fully filled under the condition that the sizes and the distribution of the pore and throats of reservoirs are not required to be clear, so that the permeability of temporary plugging layer is greatly reduced, ultralow-permeability is realized.

Abstract: An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided.

Abstract: A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided.

Abstract: A groove structure formed on a surface of a substrate. The groove structure includes a lateral epitaxial pattern in a cross section perpendicular to the surface, which has: a first edge inclined to the surface; a second edge adjacent to first edge and parallel to the surface; a third edge parallel to the first edge, having a projection on the surface covering the second edge; and a fourth edge adjacent to the third edge. A first intersection between the second edge and the third edge on the second edge and an injection of a second intersection between the third edge and the fourth edge on the second edge are located on two sides of a third intersection between the first edge and the second edge, or the injection of the second intersection between the third edge and the fourth edge on the second edge coincides with the third intersection.

Abstract: A semiconductor device comprises a substrate; a conductive layer deposited on a substrate, the conductive layer being patterned to include a first pattern, the first pattern including a major surface and a plurality of grids defined in the major surface, the major surface including first lines and a connecting portion, wherein the connecting portion is connected to an electrode; and an epitaxial layer disposed on the conductive layer, covering the grids and the first line between the adjacent grids.

Abstract: A light emitting diode includes a substrate comprising a plurality of first grooves and a plurality of first convex parts formed on a surface of the substrate, with the first groove formed between two neighboring first convex parts; a semiconductor structure formed on the substrate comprising a plurality of second convex parts corresponding to the plurality of first grooves and a plurality of second grooves corresponding to the plurality of first convex parts; a transparent conductive layer formed on the semiconductor structure and configured to transmit a current to the plurality of second convex parts; a first electrode electrically connected with the semiconductor structure; and a second electrode electrically connected with the transparent conductive layer. A method for preparing the light emitting diode is also provided.

Abstract: A groove structure formed on a surface of a substrate. The groove structure includes a lateral epitaxial pattern in a cross section perpendicular to the surface, which has: a first edge inclined to the surface; a second edge adjacent to first edge and parallel to the surface; a third edge parallel to the first edge, having a projection on the surface covering the second edge; and a fourth edge adjacent to the third edge. A first intersection between the second edge and the third edge on the second edge and an injection of a second intersection between the third edge and the fourth edge on the second edge are located on two sides of a third intersection between the first edge and the second edge, or the injection of the second intersection between the third edge and the fourth edge on the second edge coincides with the third intersection.

Abstract: A semiconductor device comprises a substrate, a conductive layer deposited on a substrate and an epitaxial layer deposited on the conductive layer. The conductive layer is patterned to include a first pattern. The first pattern includes a major surface and a plurality of grids defined in the major surface. The major surface includes a plurality of first lines and a connecting portion. The connecting portion is connected to an electrode. The epitaxial layer covers the grids and the first lines between the adjacent grids.

Abstract: A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided.

Abstract: An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided.

Abstract: A light emitting diode includes a substrate comprising a plurality of first grooves and a plurality of first convex parts formed on a surface of the substrate, with the first groove formed between two neighboring first convex parts; a semiconductor structure formed on the substrate comprising a plurality of second convex parts corresponding to the plurality of first grooves and a plurality of second grooves corresponding to the plurality of first convex parts; a transparent conductive layer formed on the semiconductor structure and configured to transmit a current to the plurality of second convex parts; a first electrode electrically connected with the semiconductor structure; and a second electrode electrically connected with the transparent conductive layer. A method for preparing the light emitting diode is also provided.

Abstract: A method for manufacturing a light emitting diode chip is provided, comprising: providing a substrate, an upper surface of which comprising a plurality of micro-bulges formed thereon; forming a first type semiconductor layer, a light emitting layer and a second type semiconductor layer on the upper surface of the substrate successively; partially etching the second type semiconductor layer and the light emitting layer to form an electrode bonding area on the first type semiconductor layer; and forming a first electrode structure on the electrode bonding area and forming a second electrode structure on the second type semiconductor layer. A LED chip and a LED comprising the same are also provided.

Abstract: A semiconductor device comprises a substrate, a conductive layer deposited on a substrate and an epitaxial layer deposited on the conductive layer. The conductive layer is patterned to include a first pattern. The first pattern includes a major surface and a plurality of grids defined in the major surface. The major surface includes a plurality of first lines and a connecting portion. The connecting portion is connected to an electrode. The epitaxial layer covers the grids and the first lines between the adjacent grids.