Patents by Inventor Chunmeng Dou

Chunmeng Dou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistance change memory device
    Patent number: 9214626
    Abstract: A resistance change memory device with a high ON/OFF radio can be provided according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the first electrode and containing an oxide of the first element, an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer, and a second electrode provided on the oxygen conductive layer. The resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when a voltage between the first electrode and the second electrode is continuously increased from zero.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: December 15, 2015
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kuniyuki Kakushima, Chunmeng Dou, Parhat Ahmet, Hiroshi Iwai, Yoshinori Kataoka
  • RESISTANCE CHANGE MEMORY DEVICE
    Publication number: 20150083987
    Abstract: A resistance change memory device with a high ON/OFF ratio can be provided. A resistance change memory device according to an embodiment includes a first electrode containing a first element, a resistance change layer provided on the first electrode and containing an oxide of the first element, an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer, and a second electrode provided on the oxygen conductive layer. The resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when a voltage between the first electrode and the second electrode is continuously increased from zero.
    Type: Application
    Filed: March 12, 2013
    Publication date: March 26, 2015
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kuniyuki Kakushima, Chunmeng Dou, Parhat Ahmet, Hiroshi Iwai, Yoshinori Kataoka