Patents by Inventor Chunmiao Zhang

Chunmiao Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DISPLAY PANEL, DISPLAY APPARATUS AND DRIVING METHOD THEREFOR, AND IMAGE RENDERING METHOD
    Publication number: 20240137484
    Abstract: Provided in the embodiments of the present disclosure are a display panel, a display apparatus and a driving method therefor, and an image rendering method.
    Type: Application
    Filed: August 27, 2021
    Publication date: April 25, 2024
    Inventors: Tieshi WANG, Kuanjun PENG, Xue DONG, Chunmiao ZHOU, Tao HONG, Hui ZHANG, Xin DUAN, Minglei CHU, Xiaochuan CHEN, Guangcai YUAN, Jing YU
  • Molecular beam epitaxy under vector strong magnetic field and in-situ characterization apparatus thereof
    Patent number: 10738394
    Abstract: The present invention discloses a molecular beam epitaxy under vector strong magnetic field and an in-situ characterization apparatus thereof. The apparatus mainly consists of an inverted T-shaped ultrahigh vacuum growth and characterization chamber with a compact structure and a strong magnet. The inverted T-shaped vacuum chamber portion, which disposed in the room-temperature chamber of the strong magnet, includes a compact epitaxial growth sample stage, a device capable of rotating angle between the growth and magnetic field directions, and an in-situ characterization apparatus. The portion disposed below the strong magnet includes a molecular beam source component such as evaporation source, plasma source etc., and a vacuum-pumping system.
    Type: Grant
    Filed: December 31, 2017
    Date of Patent: August 11, 2020
    Inventors: Junyong Kang, Chunmiao Zhang, Zhiming Wu, Ting Chen, Na Gao, Yaping Wu, Heng Li
  • MOLECULAR BEAM EPITAXY UNDER VECTOR STRONG MAGNETIC FIELD AND IN-SITU CHARACTERIZATION APPARATUS THEREOF
    Publication number: 20180179666
    Abstract: The present invention discloses a molecular beam epitaxy under vector strong magnetic field and an in-situ characterization apparatus thereof. The apparatus mainly consists of an inverted T-shaped ultrahigh vacuum growth and characterization chamber with a compact structure and a strong magnet. The inverted T-shaped vacuum chamber portion, which disposed in the room-temperature chamber of the strong magnet, includes a compact epitaxial growth sample stage, a device capable of rotating angle between the growth and magnetic field directions, and an in-situ characterization apparatus. The portion disposed below the strong magnet includes a molecular beam source component such as evaporation source, plasma source etc., and a vacuum-pumping system.
    Type: Application
    Filed: December 31, 2017
    Publication date: June 28, 2018
    Inventors: Junyong Kang, Chunmiao Zhang, Zhiming Wu, Ting Chen, Na Gao, Yaping Wu, Heng Li