Patents by Inventor Chunming Zhou
Chunming Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11798845Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: GrantFiled: October 28, 2020Date of Patent: October 24, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Xi Cen, Kai Wu, Min Heon, Wei Min Chan, Tom Ho Wing Yu, Peiqi Wang, Ju Ik Kang, Feihu Wang, Nobuyuki Sasaki, Chunming Zhou
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Publication number: 20230335393Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.Type: ApplicationFiled: June 19, 2023Publication date: October 19, 2023Inventors: Chunming ZHOU, Jothilingam RAMALINGAM, Yong CAO, Kevin Vincent MORAES, Shane LAVAN
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Patent number: 11572618Abstract: A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.Type: GrantFiled: August 26, 2020Date of Patent: February 7, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Jothilingam Ramalingam, Xiaozhou Che, Yong Cao, Shane Lavan, Chunming Zhou
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Publication number: 20220415649Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.Type: ApplicationFiled: September 2, 2022Publication date: December 29, 2022Inventors: Chunming ZHOU, Jothilingam RAMALINGAM, Yong CAO, Kevin Vincent MORAES, Shane LAVAN
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Publication number: 20220336274Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: ApplicationFiled: July 5, 2022Publication date: October 20, 2022Inventors: Xi CEN, Kai WU, Min HEON, Wei Min CHAN, Tom Ho Wing YU, Peiqi WANG, Ju Ik KANG, Feihu WANG, Nobuyuki SASAKI, Chunming ZHOU
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Patent number: 11469096Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.Type: GrantFiled: April 13, 2020Date of Patent: October 11, 2022Assignee: Applied Materials, Inc.Inventors: Chunming Zhou, Jothilingam Ramalingam, Yong Cao, Kevin Vincent Moraes, Shane Lavan
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Publication number: 20220130724Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.Type: ApplicationFiled: October 28, 2020Publication date: April 28, 2022Inventors: Xi CEN, Kai WU, Min HEON, Wei Min CHAN, Tom Ho Wing YU, Peiqi WANG, Ju Ik KANG, Feihu WANG, Nobuyuki SASAKI, Chunming ZHOU
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Publication number: 20220068709Abstract: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.Type: ApplicationFiled: August 25, 2020Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: Feihu Wang, Joung Joo Lee, Xi Cen, Zhibo Yuan, Wei Lei, Kai Wu, Chunming Zhou, Zhebo Chen
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Publication number: 20210123139Abstract: Methods for processing a substrate are provided herein. The method, for example, includes selectively depositing a first layer of metal within at least one feature on a substrate; depositing a second layer of metal atop the first layer of metal and at least on sidewalls defining the at least one feature; depositing a third layer of metal atop the second layer of metal and within the feature to at least completely fill the at least one feature; and removing some of the second layer of metal or some of the second layer of metal and some of the third layer of metal so that remaining portions of the second layer of metal and the third layer of metal are flush with a top surface of the at least one feature.Type: ApplicationFiled: August 19, 2020Publication date: April 29, 2021Inventors: Chunming ZHOU, Wenting HOU, Sree Rangasai KESAPRAGADA
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Publication number: 20210062325Abstract: A method of depositing a backside film layer on a backside of a substrate includes loading a substrate having one or more films deposited on a front side of the substrate onto a substrate support of a processing chamber, depositing, from the sputter target, a target material on the backside of the substrate to form a backside layer on the backside of the substrate, and applying an RF bias to an electrode disposed within the substrate support while depositing the target material. The front side of the substrate faces the substrate support and is spaced from a top surface of the substrate support, and a backside of the substrate faces a sputter target of the processing chamber.Type: ApplicationFiled: August 26, 2020Publication date: March 4, 2021Inventors: Jothilingam RAMALINGAM, Xiaozhou CHE, Yong CAO, Shane LAVAN, Chunming ZHOU
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Publication number: 20200350160Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for backside stress engineering of substrates to combat film stresses and bowing issues. In one embodiment, a method of depositing a film layer on a backside of a substrate is provided. The method includes flipping a substrate at a factory interface so that the backside of the substrate is facing up, and transferring the flipped substrate from the factory interface to a physical vapor deposition chamber to deposit a film layer on the backside of the substrate. In another embodiment, an apparatus for depositing a backside film layer on a backside of a substrate, which includes a substrate supporting surface configured to support the substrate at or near the periphery of the substrate supporting surface without contacting an active region on a front side of the substrate.Type: ApplicationFiled: April 13, 2020Publication date: November 5, 2020Inventors: Chunming ZHOU, Jothilingam RAMALINGAM, Yong CAO, Kevin Vincent MORAES, Shane LAVAN
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Publication number: 20130206725Abstract: Disclosed are methods and associated apparatus for depositing layers of material on a substrate (e.g., a semiconductor substrate) using ionized physical vapor deposition (iPVD). Also disclosed are methods and associated apparatus for plasma etching (e.g., resputtering) layers of material on a semiconductor substrate.Type: ApplicationFiled: March 16, 2010Publication date: August 15, 2013Inventors: Karl Leeser, Ishtak Karim, Alexandre de Chambrier, Liqi Wu, Chunming Zhou
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Patent number: 8431033Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.Type: GrantFiled: December 21, 2010Date of Patent: April 30, 2013Assignee: Novellus Systems, Inc.Inventors: Chunming Zhou, Liqi Wu, Karthik Colinjivadi, Emery Kuo, Huatan Qiu, KieJin Park
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Publication number: 20120228125Abstract: A physical vapor deposition (PVD) system includes N coaxial coils arranged in a first plane parallel to a substrate-supporting surface of a pedestal in a chamber of a PVD system and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. Plasma is created in the chamber. A magnetic field well is created above a substrate by supplying N currents to the N coaxial coils, respectively, and M currents to the M coaxial coils, respectively. The N currents flow in a first direction in the N coaxial coils and the M second currents flow in a second direction in the M coaxial coils that is opposite to the first direction. A recessed feature on the substrate arranged on the pedestal is filled with a metal-containing material by PVD using at least one operation with high density plasma having a fractional ionization of metal greater than 30%.Type: ApplicationFiled: March 21, 2012Publication date: September 13, 2012Inventors: Liqi Wu, Ishtak Karim, Huatan Qiu, Kie-Jin Park, Chunming Zhou, Karthik Colinjivadi
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Publication number: 20120152896Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.Type: ApplicationFiled: December 21, 2010Publication date: June 21, 2012Inventors: Chunming Zhou, Liqi Wu, Karthik Colinjivadi, Emery Kuo, Huatan Qiu, KieJin Park
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Publication number: 20120070589Abstract: A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.Type: ApplicationFiled: September 1, 2011Publication date: March 22, 2012Inventors: Liqi Wu, Ishtak Karim, Huatan Qiu, Kie-Jin Park, Chunming Zhou, Karthik Colinjivadi