Patents by Inventor Chunping Luo
Chunping Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8623651Abstract: The isolation, cloning of an enhancin gene bel1 from Bacillus thuringiensis, and the use of an enhancin Bel1 in biological insecticides are disclosed in the present invention. A new enhancin gene bel1 is isolated from Bacillus thuringiensis subsp. kurstaki YBT-1520, and its encoded product is a new enhancin Bel1. The enhancin has very strong effect-enhancing activity on the insecticidal action of insecticidal crystal protein Cry1Ac in killing Lepidoptera insects. The insecticidal activity of genetically engineered Bacillus thuringiensis BMB0187 developed on the basis of this enhancin is 5.7 times as high as that of the initial strain.Type: GrantFiled: November 23, 2009Date of Patent: January 7, 2014Assignee: Huazhong Agricultural UniversityInventors: Ming Sun, Ziniu Yu, Shangling Fang, Donghai Peng, Lifang Ruan, Shouwen Chen, Chunping Luo
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Patent number: 8256096Abstract: Using a beam of xenon ions together with a suitable mask, a stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal having sidewalls, including a vertical section and a shortened taper portion, has been formed. This is followed by formation of conductive lead layers as needed. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.Type: GrantFiled: October 18, 2007Date of Patent: September 4, 2012Assignees: Headway Technologies, Inc., TDK CorporationInventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jeiwei Chang
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Patent number: 8236484Abstract: As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.Type: GrantFiled: November 14, 2003Date of Patent: August 7, 2012Assignee: Headway Technologies, Inc.Inventors: Jei-Wei Chang, Chao-Peng Chen, Chunping Luo, Shou-Chen Kao
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Publication number: 20120156167Abstract: The isolation, cloning of an enhancin gene bel1 from Bacillus thuringiensis, and the use of an enhancin Bel1 in biological insecticides are disclosed in the present invention. A new enhancin gene bel1 is isolated from Bacillus thuringiensis subsp. kurstaki YBT-1520, and its encoded product is a new enhancin Bel1. The enhancin has very strong effect-enhancing activity on the insecticidal action of insecticidal crystal protein Cry1Ac in killing Lepidoptera insects. The insecticidal activity of genetically engineered Bacillus thuringiensis BMB0187 developed on the basis of this enhancin is 5.7 times as high as that of the initial strain.Type: ApplicationFiled: November 23, 2009Publication date: June 21, 2012Applicant: HUAZHONG AGRICULTURAL UNIVERSITYInventors: Ming Sun, Ziniu Yu, Shangling Fang, Donghai Peng, Lifang Ruan, Shouwen Chen, Chunping Luo
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Patent number: 8087157Abstract: Using a beam of xenon ions together with a suitable mask, a MTJ stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.Type: GrantFiled: October 18, 2007Date of Patent: January 3, 2012Assignees: Headway Technologies, Inc., TDK CorporationInventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jeiwei Chang
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Patent number: 7864490Abstract: The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.Type: GrantFiled: September 18, 2007Date of Patent: January 4, 2011Assignee: Headway Technologies, Inc.Inventors: Jeiwei Chang, Stuart Kao, Chao Peng Chen, Chunping Luo, Kochan Ju, Min Li
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Patent number: 7810227Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the dielectric and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.Type: GrantFiled: October 18, 2007Date of Patent: October 12, 2010Assignees: Headway Technologies, Inc., TDK CorporationInventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jeiwei Chang
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Publication number: 20080050615Abstract: The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.Type: ApplicationFiled: September 18, 2007Publication date: February 28, 2008Inventors: Jeiwei Chang, Stuart Kao, Chao Chen, Chunping Luo, Kochan Ju, Min Li
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Publication number: 20080043378Abstract: We describe a family of magnetic read heads that each includes a GMR or MTJ stack. A part, no more than about 0.1 microns thick, has been removed from this stack a to form a pedestal having sidewalls comprising a vertical section that includes all of the free layer.Type: ApplicationFiled: October 18, 2007Publication date: February 21, 2008Inventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jei-Wei Chang
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Publication number: 20080040914Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.Type: ApplicationFiled: October 18, 2007Publication date: February 21, 2008Inventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jeiwei Chang
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Publication number: 20080040915Abstract: Using a beam of xenon ions together with a suitable mask, a stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal having sidewalls, including a vertical section and a shortened taper portion, has been formed. This is followed by formation of conductive lead layers as needed. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.Type: ApplicationFiled: October 18, 2007Publication date: February 21, 2008Inventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jeiwei Chang
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Publication number: 20080034576Abstract: Using a beam of xenon ions together with a suitable mask, a MTJ stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.Type: ApplicationFiled: October 18, 2007Publication date: February 14, 2008Inventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jeiwei Chang
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Patent number: 7320170Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.Type: GrantFiled: April 20, 2004Date of Patent: January 22, 2008Assignees: Headway Technologies, Inc., TDK CorporationInventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jei-Wei Chang
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Patent number: 7279269Abstract: The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.Type: GrantFiled: December 12, 2003Date of Patent: October 9, 2007Assignee: Headway Technologies, Inc.Inventors: Jeiwei Chang, Stuart Kao, Chao Peng Chen, Chunping Luo, Kochan Ju, Min Li
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Publication number: 20050231856Abstract: A GMR read pillar formed by ion milling has both vertical and sloping sidewall sections with the free layer normally being located within the latter. Using xenon as the sputtering gas enables the vertical section of the pedestal to be made longer, relative to the sloping portion, without requiring an increase in the sputtering rate, so the free layer can have vertical sidewalls. This allows the point at which milling is terminated to be controlled more precisely and, by more precisely defining the width of the free layer, also improves design tolerances.Type: ApplicationFiled: April 20, 2004Publication date: October 20, 2005Inventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jeiwei Chang
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Publication number: 20050130070Abstract: The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.Type: ApplicationFiled: December 12, 2003Publication date: June 16, 2005Inventors: Jeiwei Chang, Stuart Kao, Chao Chen, Chunping Luo, Kochan Ju, Min Li
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Patent number: 6905811Abstract: As feature sizes approach 0.1 ?m or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one that is used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.Type: GrantFiled: April 22, 2003Date of Patent: June 14, 2005Assignee: Headway Technologies, Inc.Inventors: Chao Peng Chen, Chunping Luo, Stuart Kao, Jei-Wei Chang
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Publication number: 20050106509Abstract: As the critical dimensions of liftoff patterns grow smaller, it becomes increasingly more difficult to make liftoff resists that have the required resolution. This problem has been overcome by use of a combination of ion beam processing and ozone slimming to form lift-off patterns with undercuts from a single layer of photoresist. The ion beam process serves to harden the top portion of the resist while the ozone is used to oxidize and erode the lower portion resist sidewall to form the undercut.Type: ApplicationFiled: November 14, 2003Publication date: May 19, 2005Inventors: Jei-Wei Chang, Chao-Peng Chen, Chunping Luo, Shou-Chen Kao
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Publication number: 20040214109Abstract: As feature sizes approach 0.1 &mgr;m or smaller, reduction of line edge roughness (LER) becomes increasingly important. Significant reductions in edge roughness have been achieved by applying a second Ebeam exposure after the initial one thatis used to define the pattern. After this second blanket exposure a longer heat treatment and a stronger development process than before are used. In addition to reducing edge roughness the disclosed treatment allows the CD to be reduced under tight control since the amount of CD reduction is proportional to the second Ebeam dosage.Type: ApplicationFiled: April 22, 2003Publication date: October 28, 2004Applicant: Headway Technologies, Inc.Inventors: Chao Peng Chen, Chunping Luo, Stuart Kao, Jei-Wei Chang
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Patent number: 6555252Abstract: Disclosed is a modulated grain-composition magnetic recording material with up to terabit areal density recording capacity which, preferably, is produced by sequential vacuum deposition and subsequent annealing procedures that allow selective fabrication of magnetic material with desired grain size and coercivity, and with desired longitudinal or perpendicular magnetic particle “c-axis” orientation. The preferred magnetic recording material has multiple layers of FePt/B2O3 and/or Fe/Pt/B2O3, with minimum grain size of approximately ten (10) nanometers, with perpendicularly oriented “c-axis”, and with coercivity (Hc) of up to twelve (12) K-Oe. The preferred fabrication procedure involves sequential sputter deposition of FePt and B2O3 layers, followed by an anneal step.Type: GrantFiled: March 12, 2001Date of Patent: April 29, 2003Assignee: Board of Regents of the University of NebraskaInventors: David J. Sellmyer, Chunping Luo