Abstract: Disclosed is a method for fabricating nanofluidic channels having a height of from about 1 nm to about 10 nm. Generally, the method includes formation of doped silicon parallel strips in a silicon substrate, formation of a native oxide layer on the substrate, and etching of the native oxide layer at one of the strips to form a channel of a depth of between about 1 nm and about 10 nm. The method also includes bonding a second wafer to the surface, the second wafer including through etched windows to provide probe contacts to two of the parallel strips during use. These parallel strips provide high-frequency transmission lines in the device that can provide broadband dielectric spectroscopy measurement within the nanochannels.

Abstract: Disclosed is an apparatus and methodology for characterization of small devices. On-chip subtraction of parasitic effects including coupling capacitive effects is provided by way of a rat-race employing a pair of gaps. A device or material being tested is positioned in a test position gap and an output signal is extracted from the rat-race at a position displaced along the rat-race between the test position gap and the other gap to provide subtractive cancellation of any parasitic effects associated with the rat-race and especially associated with the test position gap.