Abstract: A precharge method for a data driver includes steps of: outputting a display data to a plurality of output terminals of the data driver; outputting a second precharge voltage to an output terminal among the plurality of output terminals prior to outputting the display data to the output terminal, to precharge the output terminal to a voltage level closer to an output voltage; and outputting a first precharge voltage to the output terminal prior to outputting the second precharge voltage. The first precharge voltage provides a faster voltage transition on the output terminal than the second precharge voltage.

Abstract: An electronic device includes a first insulating layer, a first conductive portion, a second conductive portion, a transistor, and an electronic unit. The first insulating layer has a first opening penetrating the first insulating layer along a first direction. The first conductive portion is disposed in the first opening. The second conductive portion is electrically connected to the first conductive portion. The transistor is electrically connected to the second conductive portion. The electronic unit is electrically connected to the first conductive portion. In a cross-sectional view of the electronic device, the electronic unit and the second conductive portion are disposed on two opposite sides of the first insulating layer respectively, the first conductive portion has a first length along a second direction perpendicular to the first direction, the second conductive portion has a second length along the second direction, and the first length is different from the second length.

Abstract: A transmission device for suppressing the glass-fiber effect includes a circuit board and a transmission line. The circuit board includes a plurality of glass fibers, so as to define a fiber pitch. The transmission line is disposed on the circuit board. The transmission line includes a plurality of non-parallel segments. Each of the non-parallel segments of the transmission line has an offset distance with respect to a reference line. The offset distance is longer than or equal to a half of the fiber pitch.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A transmission device includes a daisy chain structure composed of at least three daisy chain units arranged periodically and continuously. Each of the daisy chain units includes first, second and third conductive lines, and first and second conductive pillars. The first and second conductive lines at a first layer extend along a first direction and are discontinuously arranged. The third conductive line at a second layer extends along the first direction and is substantially parallel to the first and second conductive lines. The first conductive pillar extends in a second direction. The second direction is different from the first direction. A first part of the first conductive pillar is connected to the first and third conductive lines. The second conductive pillar extends in the second direction. A first part of the second conductive pillar is connected to the second and third conductive lines.

Abstract: A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an inner chamber, adding a volatile dopant into a feed tube, positioning the feed tube within an inner chamber at a first height relative to a surface of the melt, adjusting the feed tube within the inner chamber to a second height at a speed rate, and heating the volatile dopant to form a gaseous dopant as the feed tube is moved from the first height to the second height at the speed rate. Each of the second height and the speed rate are selected to control a vaporization rate of the volatile dopant. The method also includes introducing dopant species into the melt while growing the ingot by contacting the surface of the melt with the gaseous dopant.

Abstract: A physical analysis method, a sample for physical analysis and a preparing method thereof are provided. The preparing method of the sample for physical analysis includes: providing a sample to be inspected; and forming a contrast enhancement layer on a surface of the sample to be inspected. The contrast enhancement layer includes a plurality of first material layers and a plurality of second material layers stacked upon one another. The first material layer and the second material layer are made of different materials. Each one of the first and second material layers has a thickness that does not exceed 0.1 nm. In an image captured by an electron microscope, a difference between an average grayscale value of a surface layer image of the sample to be inspected and an average grayscale value of an image of the contrast enhancement layer is at least 50.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain (S/D) region disposed over a substrate, a second S/D region disposed over the substrate, a dielectric wall disposed between the first and second S/D regions, a first conductive contact disposed over and electrically connected to the first S/D region, a second conductive contact disposed over and electrically connected to the second S/D region, and a first dielectric material in contact with the dielectric wall. The first dielectric material has a top surface located at a first level between a top surface of the first conductive contact and a bottom surface of the first conductive contact, and the first dielectric material extends from the first level to a second level located below the bottom surface of the first conductive contact.

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: An information converting method and a system thereof are configured to convert a first information into a second information. An information obtaining step is performed to obtain the first information corresponding to a first communication protocol and transmit the first information to a converter. The first information includes a first access layer sub-information and an upper-layer protocol sub-information. A first access layer removing step is performed to drive the converter to remove the first access layer sub-information from the first information according to a converting process. A second access layer adding step is performed to drive the converter to add a second access layer sub-information corresponding to a second communication protocol to the first information and combine the second access layer sub-information with the upper-layer protocol sub-information according to the converting process, so that the first information is converted into the second information.

Abstract: A touch display device is provided in this disclosure. The touch display device includes a substrate, a first conductive layer, a second conductive layer, a stacked structure, an inorganic light emitting unit, and a touch sensing circuit. The first conductive layer is disposed on the substrate. The first conductive layer includes a gate electrode. The second conductive layer is disposed on the first conductive layer. The second conductive layer includes a source electrode and a drain electrode. The stacked structure is disposed on the substrate. The stacked structure includes a conductive channel and a sensing electrode. The inorganic light emitting unit is disposed on the stacked structure. The inorganic light emitting unit is electrically connected with the drain electrode via the conductive channel. The touch sensing circuit is electrically connected with the sensing electrode.

Abstract: The present disclosure relates to an integrated chip including a dielectric structure over a substrate. A first capacitor is disposed between sidewalls of the dielectric structure. The first capacitor includes a first electrode between the sidewalls of the dielectric structure and a second electrode between the sidewalls and over the first electrode. A second capacitor is disposed between the sidewalls. The second capacitor includes the second electrode and a third electrode between the sidewalls and over the second electrode. A third capacitor is disposed between the sidewalls. The third capacitor includes the third electrode and a fourth electrode between the sidewalls and over the third electrode. The first capacitor, the second capacitor, and the third capacitor are coupled in parallel by a first contact on a first side of the first capacitor and a second contact on a second side of the first capacitor.

Abstract: A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Abstract: Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

Abstract: A method of manufacturing a channel all-around semiconductor device includes: forming a plurality of gate structures having the same extension direction, and forming a multi-connected channel layer on a substrate. Each of the gate structures has opposite first end and second end, and the gate structures are all surrounded by the formed multi-connected channel layer, and a plane direction of the multi-connected channel layer is perpendicular to the extension direction of the gate structures, so that channels of the gate structures are connected to each other.

Abstract: Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

Abstract: A multilayer capacitive element and a design method of the same are provided. The capacitive element includes a substrate having a groove, a first aspect ratio modulation structure, and a plurality of conductive layers and a plurality of dielectric layers. The first aspect ratio modulation structure is located in the groove to define the groove as a first region and a first modulation region, wherein an aspect ratio of the first modulation region is different from that of the first region. The plurality of conductive layers and the plurality of dielectric layers are alternately stacked in the groove.

Abstract: A semiconductor package including a substrate, interposers, chips, and a dummy interposer is provided. The interposers are stacked on the substrate. The chips are located on the interposers. The chip is electrically connected to the interposer. The dummy interposer is located between the interposer and the substrate and is electrically connected to the interposer. The chip is not located between the dummy interposer and the interposer.

Abstract: A computer-implemented method of performing voltage rule check in an electronic design automation (EDA) platform is provided in the present invention, including steps of inserting pseudo device with safe operating area (SOA) model setting in a netlist generated by the EDA platform or in a schematic of process design kit (PDK), wherein parameters of the pseudo device and the model are set so that the pseudo device would not affect original circuits in the netlist and the schematic, performing SOA check in the netlist or the schematic through the EDA platform, and examining the warning messages triggered by the pseudo device and the model violating the SOA setting in the SOA check to find out layout sections violating the SOA setting.